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Microelectronics materials

M. G. Pecht, L. Nyugen, and E. B. Hakim, Plastic Encapsulated Microelectronics Materials, Processes Quality, Reliability and Applications, John Wiley Sons, Inc., New York, 1995. [Pg.535]

OGG Microelectronic Materials, Olin/CIBA-GEIGY venture photosensitive polyimides, high performance semiconductors... [Pg.121]

DIFFUSION PHENOMENAINTHINFILMSAND MICROELECTRONIC MATERIALS edited by Devendra Gupta and Paul S. Ho... [Pg.1]

Neirynck, J. M., Yang, G. R., Murarka, S. P., et al., Low Dielectric Constant Materials-Synthesis and Applications in Microelectronics, Materials Research Society Symposium Proceedings, Vol. 381,1995,pp. 229-234. [Pg.266]

Steigerward, J. M., Muraka, S. R, and Gutmann, R. J., Chemical Mechanical Planarization of Microelectronic Materials, New York WUey, 1997. [Pg.268]

Grovenor, C. R. M. Microelectronic Materials, Adam Hilger Bristol, UK, 1989. [Pg.1056]

W. Kern, Microelectronic Materials and Processes, R. A. Levy, Ed., Kluwer Academic, Dordrecht, 1989. [Pg.98]

Classifying polymers in their crosslinked state according to end-use properties, polymer networks include vulcanized rubbers, crosslinked thermosetting materials, protective coatings, adhesives, polymeric sorbents, microelectronics materials, soft gels, etc. Polymer networks in contrast to uncrosslinked polymers,... [Pg.113]

Cabot Corporation Microelectronics Materials Division Aurora, Illinois... [Pg.1]

Description of SS12 slurry, Microelectronics Materials Division, Cabot Corporation, 1995. [Pg.281]

Photoresists—Congresses. 3. Lithography— Congresses. 4. Microelectronics—Materials— Congresses. [Pg.1]

Microelectronics-Materials. 2. Integrated Circuits—Design and Construction. 3. Surface Chemistry. [Pg.4]

J.J. Pireaux and R. Sporken, X-Ray Photoelectron Spectroscopy, in Analysis of Microelectronic Materials and Devices, eds. M. Grasserbauer and H.W. Werner, John Wiley and Sons, 1991. [Pg.504]

The puzzling thing about GaN is that it shouldn t work as a microelectronic material it is just too riddled with crystal dislocations. If GaAs has more than 1000 dislocations per square centimetre it is unable to function as an LED, yet GaN can have a billion dislocations per square centimetre and still work. How does GaN accomplish this mission impossible As yet there is no dear answer to this question although it has something to do with the interface between the p- and n-forms of the semiconductor. The p-GaN is obtained by adding traces... [Pg.149]

Low pressure CVD (LPCVD) has become a dominant process in the growth of thin films of microelectronic materials. It is widely used to deposit thin films of polycrystalline Si, Si02, and Si3N4 In addition it has been demonstrated for deposition of metals, specifically Al and W. The process is carried out in tubular, hot wall reactors where the wafers are placed perpendicular to the flow direction as illustrated in Figure 2. The very large packing densities that can be realized in LPCVD reactors without adverse... [Pg.200]

Photoresists—Congresses. 3. Microlithography— Materials—Congresses. 4. Microelectronics— Materials—Congresses. [Pg.630]

The adsorption of iron(O) pentacarbonyl was recently studied on a Si(lll)-(7 x 7) surface. The interest in Fe(CO)5 lies in its availability as a source gas for the chemical vapor deposition of FeSi2, a critical microelectronics material. Even at temperatures as low as lOOK, Fe(CO)5 already underwent dissociative adsorption to yield a linear iron monocarbonyl (FeCO) surface complex. The prominent loss peaks that appeared at 53meV (428 cm ), 81meV (653 cm ), and 255 meV (2056 cm ) were assigned to the Si-COFe, Fe-CO, and C=0 stretch modes, respectively. These peaks were shown to arise only via dipole scattering which, because of the dipole selection rule, indicates that the adsorbed FeCO is oriented vertically with the CO moiety bonded to the Si surface. [Pg.6055]

Steigerwald JM, Murarka SP, Gutmann RJ. Chemical Mechanical Planarization of Microelectronics Materials New York John Wiley Sons, Inc.,1997. [Pg.53]

Integrated circuits-Design and construction. 2. Chemical mechanical planarization. 3. Microelectronics-Materials. I. Li, Yuzhuo. [Pg.740]

The only comprehensive reference to one of the fastest growing integrated circuit manufacturing technologies, Chemical Mechanical Planarization of Microelectronic Materials is an important resource for research scientists and engineers working in the microelectronics industry. [Pg.325]


See other pages where Microelectronics materials is mentioned: [Pg.716]    [Pg.721]    [Pg.324]    [Pg.384]    [Pg.373]    [Pg.27]    [Pg.32]    [Pg.280]    [Pg.320]    [Pg.268]    [Pg.88]    [Pg.268]    [Pg.115]    [Pg.117]    [Pg.128]    [Pg.185]    [Pg.325]   


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