Interconnect resistance

Silicon 100 to 430 0.1 to 0.2 RTDs so less affected by interconnecting resistances. 

For electrically short interconnections with high resistance, such as on-chip interconnections, signal delays are dominated by the rise time degradation due to the charging of the receiver capacitance by the interconnection resistance (fllineCrec) (54, 55). On PWBs in which resistance is negligible, the... 

The generation of heat always accompanies the operation of a fuel cell. The heat is due to inefficiencies in the basic fuel-cell electrochemical reaction, crossover (residual diffusion through the fuel-cell solid-electrolyte membrane) of fuel, and electrical heating of interconnection resistances. Spatial temperature variation can occur if any of these heat-generating processes occur preferentially in different parts of the fuel cell stack. For example, non-uniform distribution of fuel across the surfaces of electrodes, different resistances between the interconnections in a stack, and variations among... 

In many applications, photodiodes operate at zero polarization. They must therefore have high dynamic resistance to ensure a high detectivity. This is achieved in US-A-4972244 by separating detector elements by trenches. Furthermore, a common electrode is provided at the bottom of the trenches thereby reducing the interconnection resistance of the photodiodes. 

For future high-speed microelectronic devices, copper interconnection with low dielectric constant (low-k) interlayer films is required to decrease RC (R interconnect resistance, C interlayer dielectric capacitance) delay. Recently, porous Si02 and silica-based films, developed for low-k films, have been extensively studied by positron annihilation spectroscopy [28], [29], [19]. Since Ps formation occurs with high probability, and the o-Ps annihilate via pick-off process in Si02-based materials, positron annihilation spectroscopy (especially PALS) gives useful information on the size of the pores. 

Aluminum metallization 1961 Copper metallization 2001 Lower interconnect resistance electromigration... 

Also shown explicitly in Fig. 6.1.6 is the interconnection resistance Rpm of the movable structure. In sensors with long and skinny mechanical suspensions it is often large and can contribute significant electronic noise. Highly doped substrates and connecting all suspensions electrically in parallel reduce this source of error. Other interconnection resistances are often negligible and omitted from the circuit diagram. Silicon resistivity should be kept sufficiently low also to prevent depletion of the capacitor electrodes. 

The processes of planarization is vital for the development of multilevel structures in VLSI circuits. To minimize interconnection resistance and conserve chip area, multilevel metallization schemes are being developed in which the interconnects run in three dimensions. Figure 5-4 shows a schematic of the multilevel metallization made possible by planarization. 

The development of new materials possessing low dielectric constant (k) is crucial for applications in miniaturized integrated circuits (sub-lOOnm technology). Porous thin films with low k dielectric could provide solutions to the problems of signal delays caused by interconnect resistance-capacitance, signal crosstalk, and power consumption. Suggest a thin film material that would be suitable for low k dielectric applications. 

The main electrical properties related to organic materials are volume resistivity (for both conductive and nonconductive adhesives) and dielectric constant and dissipation factor (for insulative materials). Other electrical tests for conductive materials that are more application specific are electrical stability, current-carrying capacity, and interconnect resistance. 

Other characteristics of electrical interconnects are current-carrying capacity and interconnect resistance. Current-carrying capacity is important for the qualification of adhesives for flip-chip interconnects. Typical cmrent densities for conductive epoxies used as flip-chip bumps are 10-20 A/mm and typical bump resistances are 12 mQ. 

Light transmittance (ASTM D1003-00) Current carrying ability interconnect resistance (N/A) Hydrolytic stability (IPC-TM-650, TM 2.3.10) Voids, delamination (acoustic microscopy) (MIL-STD-883, Method 2030) Total mass loss, water vapor recovery, and volatile condensable materials (ASTM E595)... 

Assume that the electronics portion of the converter has an efficiency of 90%. If the equivalent output-interconnect resistance were zero, then the output power would be ... 

In the ideal case, the interconnect resistance would be zero. However, in the real world, always has a finite value and needs to be considered when modeling the electrical performance. The power lost in Rj,is calculated from... 

The delay time in a circuit is equal to the sum of the delays in the active circuits and in tiie interconnections. The delay (f ) introduced by interconnections is tile product of the interconnect resistance (R) and the capacitance (C). This can be expressed as ... 

The Monte Carlo-type electrode model is also called the particle connectivity model because its physics is straightforwardly based on KirchhofTs law for an electrical network, with particle resistance and interconnection resistances defined by a set of rules to mimic the current flow and electrochemical current generation within the microstructure. The electrochemical process is considered to take place with a constant resistance in agreement with intuitive notions about the mechanism. Variants of this concept attach correlated values to the resistances in the network to model polarisation more closely according to a percolation concept of active sites and passive connections [59]. Other specialised types of electrode models are mentioned briefly below,... 

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