Indium, deposition

Coverage dependence of 200 cycles of In As deposit with change in Indium deposition potential... 

Figure 13.4 Example of the activation of infrared active modes in the Raman spectrum for the case of indium deposition onto PTCDA.

Data for a deposited indium sample are shown in Figure 14. After indium deposition, the samples are scanned at 300 °C in order to anneal the particles and make them stable. Then, the calorimetric measurements are performed. Calorimetric data are presented as a relation between the heat capacity of the sample, Cp, and the sample temperature T. Each Cp-T curve presented in Figure 14(d) is an average of 100 scans, which inaeases the sensitivity. Nevertheless, the features discussed are observable in each single scan. 

Pocza J F, Barna A and Barna P B 1969 Formation processes of vacuum deposited indium films and thermodynamical properties of submicroscopic particles observed by in situ electron microscopy J. Vac. Sc/. Techno . 6 472... 

AppHcations for electroplated indium coatings include indium bump bonding for shicon semiconductor die attachment to packaging substrates and miscehaneous appHcations where the physical or chemical properties of indium metal are desired as a plated deposit. 

Indium chemicals and electroplated metal deposits ate replacing mercury (qv) in the manufacture of alkaline batteries (qv). Indium, like mercury, functions to reduce outgassing within the battery and promotes the uniform corrosion of the anode and cathode while the battery is under electrical load. Indium inorganic chemicals also find use as catalysts in various chemical processes. 

Aqueous Electrodeposition. The theory of electro deposition is well known (see Electroplating). Of the numerous metals used in electro deposition, only 10 have been reduced to large-scale commercial practice. The most commonly plated metals are chromium, nickel, copper, zinc, rhodium, silver, cadmium, tin, and gold, followed by the less frequendy plated metals iron, cesium, platinum, and palladium, and the infrequendy plated metals indium, mthenium, and rhenium. Of these, only platinum, rhodium, iddium, and rhenium are refractory. 

Another growing apphcation that overlaps the electrically functional area is the use of transparent conductive coatings or tin oxide, indium—tin oxide, and similar materials in photovoltaic solar ceUs and various optic electronic apphcations (see Photovoltaic cells). These coatings are deposited by PVD techniques as weU as by spray pyrolysis, which is a CVD process. 

StiU another method used to produce PV cells is provided by thin-fiLm technologies. Thin films ate made by depositing semiconductor materials on a sohd substrate such as glass or metal sheet. Among the wide variety of thin-fiLm materials under development ate amorphous siUcon, polycrystaUine sUicon, copper indium diselenide, and cadmium teUuride. Additionally, development of multijunction thin-film PV cells is being explored. These cells use multiple layers of thin-film sUicon alloys or other semiconductors tailored to respond to specific portions of the light spectmm. 

Production and Economic Aspects. Thallium is obtained commercially as a by-product in the roasting of zinc, copper, and lead ores. The thallium is collected in the flue dust in the form of oxide or sulfate with other by-product metals, eg, cadmium, indium, germanium, selenium, and tellurium. The thallium content of the flue dust is low and further enrichment steps are required. If the thallium compounds present are soluble, ie, as oxides or sulfates, direct leaching with water or dilute acid separates them from the other insoluble metals. Otherwise, the thallium compound is solubilized with oxidizing roasts, by sulfatization, or by treatment with alkaU. The thallium precipitates from these solutions as thaUium(I) chloride [7791 -12-0]. Electrolysis of the thaUium(I) sulfate [7446-18-6] solution affords thallium metal in high purity (5,6). The sulfate solution must be acidified with sulfuric acid to avoid cathodic separation of zinc and anodic deposition of thaUium(III) oxide [1314-32-5]. The metal deposited on the cathode is removed, kneaded into lumps, and dried. It is then compressed into blocks, melted under hydrogen, and cast into sticks. 

Spray Pyrolysis. In spray pyrolysis, a chemical solution is sprayed on a hot surface where it is pyrolyzed (decomposed) to give thin films of either elements or, more commonly, compounds (22). Eor example, to deposit CdS, a solution of CdCl plus NH2CSNH2 (thiourea) is sprayed on a hot surface. To deposit Iu202, InCl is dissolved in a solvent and sprayed on a hot surface in air. Materials that can be deposited by spray pyrolysis include electrically conductive tin—oxide and indium/tin oxide (ITO), CdS, Cu—InSe2, and CdSe. Spray pyrolysis is an inexpensive deposition process and can be used on large-area substrates. 

The solutions used are generally highly concentrated, except in the case of the precious metals (for reasons of expense) and when zinc and cadmium are deposited from cyanide solutions, since soluble anodes are employed in the cases of these two metals. Proprietary solutions are available, particularly for such difficult metals as chromium, rhodium and indium, and it is advisable to use them. 

A proprietary tetrachromate bath has been used in Germany under the name of the D process. By the use of additions of magnesium oxide and sodium tungstate it is claimed that the current efficiency of the bath can be raised to as high as 35-40%. Other additives such as indium sulphate, sodium selenate or sodium hexavanadate enable bright deposits to be obtained. 

Numerous proprietary electrolytes have been developed for the production of harder and brighter deposits. These include acid, neutral and alkaline solutions and cyanide-free formulations and the coatings produced may be essentially pure, where maximum electrical conductivity is required, or alloyed with various amounts of other precious or base metals, e.g. silver, copper, nickel, cobalt, indium, to develop special physical characteristics. 

Rare earth elements, with relatively high thermal neutron activation cross-sections, have been tested or considered as tagging species for this purpose. At GA (Ref 8), preliminary expts were conducted with 0.38 cal ammo using dysprosium (Dy) and europium (Eu) deposited on the wall of the cartridge case and in the gunpowder, and Dy, hoKnium (Ho) and indium (In) in the primer. 

Electrode coated with lH,lH,2H,2H-perfluorodecanethiol. ) Electrolyticall deposited indium electrode. 

A schematic of epitaxial growth is shown in Fig. 2.11. As an example, it is possible to grow gallium arsenide epitaxially on silicon since the lattice parameters of the two materials are similar. On the other hand, deposition of indium phosphide on silicon is not possible since the lattice mismatch is 8%, which is too high. A solution is to use an intermediate buffer layer of gallium arsenide between the silicon and the indium phosphide. The lattice parameters of common semiconductor materials are shown in Fig. 2.12. 

Metallo-organic CVD (MOCVD) is a specialized area of CVD, which is a relatively newcomer, as its first reported use was in the 1960s for the deposition of indium phosphide and indium anti-monide. These early experiments demonstrated that deposition of critical semiconductor materials could be obtained at lower temperature than conventional thermal CVD and that epitaxial growth could be successfully achieved. The quality and complexity of the equipment and the diversity and purity of the precursor chemicals have steadily improved since then and MOCVD is now used on a large scale, particularly in semiconductor and opto-electronic applications.91P1... 

Sn02 is codeposited with indium oxide to form a compound known as indium tin oxide (ITO), widely used as a transparent conductive film. ITO is usually deposited by sputtering and little work on CVD has been reported. 

LED materials include gallium arsenic phosphide, gallium aluminum arsenide, gallium phosphide, gallium indium phosphide, and gallium aluminum phosphide. The preferred deposition process is MOCVD, which permits very exacting control of the epitaxial growth and purity. Typical applications of LED s are watches, clocks, scales, calculators, computers, optical transmission devices, and many others. 

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