Indium oxide deposition

G. Blandenet, Y. Lagarde, and J. Spitz, Indium Oxide Deposition on Glass by Aerosol Pyrolysis, Chemical Vapor Deposition, 1975, pp. 190-203. 

Sn02 is codeposited with indium oxide to form a compound known as indium tin oxide (ITO), widely used as a transparent conductive film. ITO is usually deposited by sputtering and little work on CVD has been reported. 

O. Marcovitch, Z. Klein, and I. Lubezky, Transparent conductive indium oxide films deposited on low temperature substrates by activated reactive evaporation, Appl. Opt., 28 2792-2795 (1989). 

Nanoparticles of Ti02 are deposited on to a glass support covered with a transparent conducting layer of tin-doped indium oxide (ITO). Each nanoparticle is coated with a monolayer of sensitising dye based on Ru(II). Photoexcitation of the dye results in the injection of an electron into the CB of the semiconductor. 

Silicon, diamond, and metal deposition are all examples of elemental deposition. Compounds, particularly oxides, are also deposited by chemical vapor deposition. Some of the important oxides deposited as thin films include SiC>2, BaTiC>3, LiNbC>3, YBa2Cu30,. indium-doped SnC>2, and LiCoC>2. These materials have properties such as superconductivity or lithium ionic conductivity that make their production as thin films a much-studied area of research. If the oxide is to be deposited on the bare metal (e.g., depositing SiC>2 onto Si), chemical vapor deposition is not really needed. Controlling the oxygen partial pressure and temperature of the substrate will produce the oxide film Whether the film sticks to the substrate is another question The production of SiC>2 films on Si is an advanced technology that the integrated-circuit industry has relied on for many years. Oxide films on metals have been used to produce beautiful colored coatings as a result of interference effects (Eerden et al., 2005). 

For spectroelectrochemical and photoelectrochemical studies, optically semi-transparent electrodes have been fabricated by vapour deposition techniques on glass or quartz substrates (Chapter 12). Tin and indium oxides, platinum, and gold have been used. 

Lee S. B., Pincenti J. C., Cocco A. and Naylor D.L. Electric and optical properties of room temperature sputter deposited indium oxide J. Vac. Soc. Technol. 1993 All 5-10. 

The kinetics of the deposition of In20i films have not been investigated by many groups, since most of them concentrate on the physical properties and possible applications. The published results are listed in Table 3-8. In addition, there are only two remarks about decomposition pathways. Maruyama andTabata [111] state that indium acetate needs no oxygen as reactant to form indium oxide, i.e., some of the metal-oxygen bonds are not broken during the deposition. Also, as proposed by Nomura and coworkers [122], the butylindium thiolate decomposes via formation of indium sulfides ... 

The results in Table 3-9 demonstrate, furthermore, that it is possible to grow fluorine and tin-doped indium oxide films with CVD techniques, which possess a high transmission of light (> 90%) and very low resistivities (< 1 mQcm). They are comparable to ITO films prepared by sputtering or other physical deposition techniques, which are generally used in industry these days. 

There exist, furthermore, new classes for transparent, conducting oxides being studied in the last few years, Mgln204 [242], CdGa204 [243] or GalnO, [244], or indium oxide doped simultaneously with tin and titanium, zirconium or germanium [245]. However, these have not, until now, been prepared with chemical vapor deposition techniques. 

Similar to hydrogen ion implantation, spinel magnesium indium oxide films were irradiated with 1.5 MeV Li+ ions for various fluences and their optical absorption spectra are shown in Figure 9.14a. It is inferred that the absorption spectra have three features the slope from 300 to 350 nm, strong absorption at 365 nm, and broadband around 540 nm. The hump at 2.3 eV (540 nm) is ascribed to surface plasmon resonance of Li nanoparticles and the wide slope is due to the transitions from the lithium sublevels including widely spread defect bands. In comparison with the low fluence irradiated and as-deposited Aims, Mglu204 Alms implanted with LF ions at high fluence have... 

A diffuse reflectance measurement begins with the collection of a reference scan. For samples deposited on reflective substrates, such as metallic molybdenum, the bare metal serves as a reference to account for any absorption in the metal itself. Samples deposited onto transparent substrates, such as a transparent conducting oxide deposited on glass (e.g., indium-tin oxide, or ITO), require the use of a white diffuse reflectance standard. This standard is often made from Ba2S04 or PTFE based material similar to, if not the same as, that used to coat the interior surface of the integrating sphere. The user places the standard against the open... 

In many spectroelectrochemical studies, optically transparent electrodes, which are transparent to radiation in a particular spectral region, have been widely used. One type of transparent electrode consists of a very thin film of conductive material such as platinum, gold, tin oxide, indium oxide, or carbon, which is deposited on a transparent substrate such as glass (visible), quartz (UV-visible), or germanium (IR). A second type of transparent electrode is the minigrid electrode. 

---