Indium Antimonide material

Tlie detector consists of a 256 X 256 array of indium antimonide mesa photodiodes. These detectors are made by diffusing a sheet junction into a wafer of indium antimonide material. Afterwards, the diodes are delineated with a deep mesa trench, and then passivated. The wafer is attadied to a substrate and thinned to the correct thickness. The individual diodes receive a contact metallization, followed by an indium bump deposition. The die are then sawn from the wafer, screened, and are then ready to be naated to multiplexers. 

The supplanting of germanium-based semiconductor devices by shicon devices has almost eliminated the use of indium in the related ahoy junction (see Semiconductors). Indium, however, is finding increased use in III—V compound semiconductors such as indium phosphide [22398-80-7] for laser diodes used in fiber optic communication systems (see Electronic materials Fiber optics Light generation). Other important indium-containing semiconductors include indium arsenide [1303-11-3] indium antimonide [1312-41 -0] and copper—indium—diselenide [12018-95-0]. 

Typical materials used in NIR photoconductive detectors are PbS, PbSe, InSb and InAs (lead sulphide, lead selenide, indium antimonide and indium arsenide). 

Removal of contamination by ion bombardment with inert gas ions, followed by annealing. This method can be applied to either single or poly-crystalline materials and has been found to be effective for the compound indium antimonide having a melting point of 525°C as well as for more refractory materials, ft has also been found to be effective in removing a monolayer of carbon from nickel and silicon crystals. 

Photoconductive materials such as lead sulfide, lead selenide or indium antimonide, which respond to incident infrared radiation by changing their electrical resistance, are used as the sensing elements in instrumentation for radiometric measurement of temperature. Bowden and Thomas [27] measured the temperature of "hot spots" in the sliding of a metal rider against a glass disk with a lead sulfide cell in the arrangement illustrated in Fig. 15-11. A glass disk was used because the... 

Photon detectors consist of a thin film of semiconductor material, such as lead sulfide, lead telluride, indium antimonide, or germanium doped with copper or mercury, deposited on a nonconducting glass and sealed into an evacuated envelope. Photon flux impinging on the semiconductor increases its conductivity. Lead-sulfide detectors are sensitive to radiation below about 3 fj.m in wavelength and have a response time of about 10 /nsec. Doped germanium detectors cooled to liquid-helium temperatures are sensitive to radiation up to about 120 jitm in wavelength, and have a response time of approximately 1 nsec. 

The scintillations (visible light photons) from the crystal fall on the cathode of the PMT, which is made of a photoemissive material such as indium antimonide. Photoemissive materials release electrons when struck by photons. Electrons ejected from the cathode are accelerated to the first dynode, generating a larger number of electrons. The electron multiplication process occurs at each successive dynode, resulting in approximately 10 electrons reaching the anode for every electron that strikes the cathode. The amplitude of the current pulse from the photomultiplier is proportional to the energy of the X-ray photon causing the ionization in the crystal. 

Indium Antimonide (InSb). The transport properties are mainly determined by the extremely high mobility of the electrons in the Fe minimum of the conduction band. Pure material with intrinsic conduction down to 200 K is available. At low temperatures and in doped material, impurity scattering limits the electron mobility. 

The use of infrared spectrometry for quantitive analysis became possible only in the 1980s, when affordable and user-friendly benchtop Fourier-transform spectrometers became available. The sensitivity of the FT-IR spectroscopy was, however, insufficient to meet the requirements of the immunoassay. To address this problem, an instrument equipped with a liquid nitrogen-cooled detector made from a semi-conducting material, for example MCT (mercury-cadmium-telluride) or InSb (indium antimonide), was used to increase sensitivity by a factor of 20 compared with the thermal detector DTGS found in standard FT-IR machines. Use of a light-pipe cell with a long optical path (20 mm) for a... 

The material composition of the FPAs determines the detectable IR-spectral frequency range. Many types of detectors are available, ranging from the commonly used indium antimonide (InSb) for near IR and mercury cadmium telluride (HgCdTe, MCT) for the mid IR to the more exotic silicon arsenide (Si As) [10] and uncooled barium strontium titanium (BST) [11]. Mid-IR imaging using MCT FPAs [12] has been the most popular in terms of the number of studies performed, due to its ability to provide access to the molecular-fingerprint region. 

Operating wavelength of the detector should be as close to the cutoff wavelength (Ico = hc/Eg) as possible. This requirement is easiest to meet in three-compound semiconductor materials with continually adjustable bandgap, e.g., mercury cadmium telluride (Hgi- cCd cTe) [8], mercury zinc telluride (Hgi- cZn cTe) [69-71], lead tin telluride Pbi Sn Te [72, 73], and indium arsenide antimonide (Ini - cAS cSb) [74] which for x = 0 reduces to indium antimonide, InSb. 

Indium antimonide inorg chem InSb Crystals that melt at 535°C an intermetallic compound having semiconductor properties and the highest room-temperature electron mobility of any known material used in Hall-effect and magnetoresistive devices and as an infrared detector, j in-ds-cm, an tim-3,nTd ... 

Indium Antimonide (InSb) - A material from which fast, sensitive photodetectors used in infirared sensors, scanners and imagers are made. Such detectors usually requiring cooling while in operation. 

For infrared microspectroscopy, single-element detectors are used for point and mapping measurements. More recently, array detectors have been applied for spectroscopic imaging in the infrared. In infrared focal plane arrays, the monolithic silicon design used in CCDs is replaced by a hybrid construction. In a hybrid detector, photon detection occurs in a semiconductor layer (indium antimonide, mercury cadmium telluride, and doped-silicon are typical detector materials), while the readout and amplification stages are carried out in a silicon layer. The two layers are electrically connected at each pixel through indium bump-bonds . Other innovations such as microbolometer arrays also show promise for spectroscopic imaging applications. 

Most intrinsic photoconductors are made of indium antimonide (InSb), cadmium sulfide (CdS), or lead sulfide (PbS). Figure 4.79 shows the spectral sensitivity of these materials. While PbS detectors can be used also at room temperature with detectivities of 5x 10 cm Hz W InSb detectors... 

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