Doping, silicon

J. Guldberg, ed., Neutron-Transmutation-Doped Silicon, Proceedings of the Third International Conference on Transmutation Doping of Silicon, Copenhagen, Denmark, Plenum Press, Inc., New York, 1981. 

Fujimo, K., Nishimoto, Y., Tokumasu, N., andMaeda, K., Doped Silicon Oxide Deposition by Atmospheric Pressure and Low Temperature CVD using Tetraethoxysilane and Ozone, J. Electrochem. Soc., 138(10) (Oct. 1991)... 

Replacement of doped silicon in MOS devices where silicon resistivity (300 iohm-cm) is too high. 

C22-0095. Neutron bombardment is an elegant way of doping silicon with phosphoms to convert it into an... 

Figure 1.2 Modulus of the field enhancement factor versus the aspect ratio a = b and wavelengths X for SPM tips of different materials (a) gold, (b) platinum, (c) silver, (d) p-doped silicon, (e) tungsten. Reprinted with permission from J. Jersch, Applied Physics A, 66, 29 (1998). Copyright 1998, Springer-Verlag.

J. R. Patel, Electronic Effects on Dislocation Velocities in Heavily Doped Silicon, ... 

Figure 12.4 shows an example of experimental set up for a classical measurement of heat capacity the sample is glued onto a thin Si support slab. The thermometer is a doped silicon chip and the heater is made by a ( 60 nm thick) gold deposition pattern. Electrical wiring to the connect terminals are of superconductor (NbTi). The thermal conductance to the thermal bath (i.e. mixing chamber of a dilution refrigerator) is made with thin nylon thread. The Si slab, the thermometer and the heater represent the addendum whose heat... 

Perhaps not surprisingly, the most thorough NMR studies of Knight shifts, Korringa relaxation, metal-insulator transitions, and the NMR of the dopant nuclei themselves have been carried out for doped silicon. Since few semiconductors other than PbTe, which presents a considerably more complicated case, have been studied in such detail, it is worthwhile here to summarize salient points from these studies. They conveniently illustrate a number of points, and can shed light on the behavior to be expected in more contemporary studies of compound semiconductors, which are often hindered by the lack of availability of a suite of samples of known and widely-varying carrier concentrations. 

Fig. 7. Depth profiles of deuterium in n-type (P-doped) silicon after deuteration in a remote plasma system at 150°C (a) entire profile after a 120 min deuteration and (b) near-surface profiles after different durations of deuteration. Also shown is the uniform P concentration.

Other reverse-bias annealing experiments have been published that can be analyzed in the same way. Tavendale et al. (1985) used 10 ft cm boron-doped silicon passivated by exposure to plasmas containing or 2H. Schottky diodes formed with such specimens showed breakup of BH under heating at 80°C with reverse bias however, there was a persistence of passivation in the first two or three microns that must be attributed to some sort of near-surface reservoir of hydrogen. This effect was absent in an annealing experiment on a junction diode with an -type surface... 

The above diffusion characteristics of deuterium in p-type GaAs and InP are very close to those found in deuterated boron doped silicon (Johnson,... 

The solution-processed doped silicon films described above (baked at 500 °C for 2 hr) exhibited high electrical resistivity (greater than 300 Qcm), which is the measurement limit of the instrument we used. To lower the resistivity, we tried an additional rapid thermal annealing (RTA) of the film prepared from the copolymerized solution with 1 wt% phosphorus concentration. In this RTA, the SiC plate on which the sample was placed was irradiated with infrared (IR) light from a 1-kW IR lamp. The RTA conditions were 600 °C for 2 hr, 650 °C for 20 min, 700 °C for 5 min, and 750 °C for 5 min these temperatures were that of the SiC plate, and the temperature of the Si film is estimated to be several dozens of degrees lower than that. 

Figure 5.18 shows the relationship between the resistivity and phosphorus concentration of the initial solution for the film formed from various solutions and heated under the same polycrystallizing RTA conditions (750 °C for 5min). As the initial phosphorus concentration increases, the resistivity decreases down to 2.1mQcm. The film formed from a l-wt% postpolymerization addition solution and the film formed from a 0.01-wt% copolymerized solution exhibit almost the same resistivity, which is reasonable since the two films have almost the same amount of phosphorus atoms, as shown in Fig. 5.16. To apply these doped-silicon films to the source and drain regions of poly-Si TFTs, the initial concentration of 0.1-1 wt% will be sufficient in the case of the copolymerized solution for this heating condition.

Electrochemical etching is one way of controlling the etch rate and determine a clear etch stop layer when bulk micromachining Silicon. In this case, the wafer is used as anode in an HF-Electrolyte. Sufficiently high currents lead to oxidation of the silicon. The resulting oxide which is dissolved by the HF-solution. Since lowly doped silicon material is not exhibiting a notable etch rate, it can be used as an etch stop. 

ELECTRONIC PROPERTIES DOPED SILICON AND GERMANIUM AS EXAMPLES 7... 

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