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IC

Another important application area is the non-destructive defectoscopy of electronic components. Fig.2a shows an X-ray shadow image of a SMC LED. The 3-dimensional displacement of internal parts can only be visualized non-destructively in the tomographic reconstmction. Reconstructed cross sections through this LED are shown in Fig.2b. In the same way most electronic components in plastic and thin metal cases can be visualized. Even small electronic assemblies like hybrid ICs, magnetic heads, microphones, ABS-sensors can be tested by microtomograpical methods. [Pg.581]

Let us consider the calculation of sensitivity threshold in the case when the cracks are revealing by PT method. Constant distance H between crack s walls along the whole defect s depth is assumed for the simplicity. The calculation procedure depends on the dispersity of dry developer s powder [1]. Simple formula has to be used in the case when developer s effective radius of pores IC, which depends mainly on average particle s size, is smaller than crack s width H. One can use formula (1) when Re is small enough being less than the value corresponding maximum sensitivity (0,25 - 1 pm). For example. Re = 0,25 pm in the case when fine-dispersed magnesia oxide powder is used as the developer. In this case minimum crack s width H that can be detected at prescribed depth lo is calculated as... [Pg.614]

SC EDC (87C51FC) operates under the conditions of 32 kb program internal memory As to expand the internal memory, additional external IC WM of 2 kb memory is used. [Pg.651]

In order to prevent information loss in case of switching off the general power source, IC WM is supplying through the supervisor MAX 691 from accumulator of 3.6 V and 60 mA h which is only connected with WM in case of supply has stopped. In normal conditions the above accumulator is being charged from power source of -t 5 V. [Pg.651]

IIii iM r (Ians Ic menu s.ysicm a i)aiii ln nu l-aire AMl I d iniiir (ernna... [Pg.706]

The equation of state for a solid film is often ic= b - aa (note Section IV-4D). Derive the corresponding adsorption isotherm equation. Plot the data of Problem 11 according to your isotherm equation. [Pg.674]

The technique of low-energy electron diffraction, LEED (Section VIII-2D), has provided a considerable amount of information about the manner in which a chemisorbed layer rearranges itself. Somotjai [13] has summarized LEED results for a number of systems. Some examples are collected in Fig. XVlII-1. Figure XVIII-la shows how N atoms are arranged on a Fe(KX)) surface [14] (relevant to ammonia synthesis) even H atoms may be located, as in Fig. XVIII-Ih [15]. Figure XVIII-Ic illustrates how the structure of the adsorbed layer, or adlayer, can vary wiA exposure [16].f There may be a series of structures, as with NO on Ru(lOTO) [17] and HCl on Cu(llO) [18]. Surface structures of... [Pg.686]

It should be noted that typical values for for simple metals like sodium or potassium are of the order of several electronvolts. If one defines a temperature, Jp, where Jp = E /lc and Ic is the Boltzmaim constant,... [Pg.94]

Ic now serves to label the states iu the same sense n serves to label states for a square well. [Pg.103]

From stochastic molecnlar dynamics calcnlations on the same system, in the viscosity regime covered by the experiment, it appears that intra- and intennolecnlar energy flow occur on comparable time scales, which leads to the conclnsion that cyclohexane isomerization in liquid CS2 is an activated process [99]. Classical molecnlar dynamics calcnlations [104] also reprodnce the observed non-monotonic viscosity dependence of ic. Furthennore, they also yield a solvent contribntion to the free energy of activation for tlie isomerization reaction which in liquid CS, increases by abont 0.4 kJ moC when the solvent density is increased from 1.3 to 1.5 g cm T Tims the molecnlar dynamics calcnlations support the conclnsion that the high-pressure limit of this unimolecular reaction is not attained in liquid solntion at ambient pressure. It has to be remembered, though, that the analysis of the measnred isomerization rates depends critically on the estimated valne of... [Pg.860]

In the above section a hannonic model is described for calculating RRKM rate constants with hamionic sums and densities of states. This rate constant, denoted by Ic iE, J), is related to the actual anhamionic RRKM rate constant by... [Pg.1020]

We note here that the qiiantnm levels denoted by the capital indices I and F may contain numerous energy eigenstates, i.e. are highly degenerate, and refer to chapter A3.4 for a more detailed discussion of these equations. The integration variable in equation (A3.13.9) is a = 7 j / Ic T. [Pg.1047]


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See also in sourсe #XX -- [ Pg.220 , Pg.269 ]

See also in sourсe #XX -- [ Pg.77 , Pg.96 , Pg.291 , Pg.294 ]




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Additive-CD-ICs

Assessing the advantages and disadvantages of ICS technology

CMP Requirements in Comparison with IC Fabrication

Carcinogen(ic)s

Challenges to Silicon IC Manufacturing

Chromatography (IC)

Class IC Liquid

Class IC antiarrhythmic agents

Class Ic antiarrhythmics

Command System (ICS)

Components of an Ion Chromatograph (IC) Instrument

Conversion (IC)

Coupling IC/AAS

Coupling IC/DCP-AES

Coupling IC/ICP

Dicarboxyl ic acids

Electrochemical Detection in IC

Electronic Energy in ICs

ExcelPak ICS

Facility and Community Response Organization ICS

Fiber Length Less than Ic

Glycoprotein Ic/IIa

Herbicidal Activity of IC

Hfe VERSUS Ic FOR DIFFERENT VALUES OF VCE

High voltage, ICs

Hydro ic acid

Hydrogen IC Engine

IC Metallization

IC Pak Anion

IC channel

IC derivative

IC devices, fabrication

IC engine

IC machines

IC manufacturing

IC model

IC package

IC packaging

IC processes

IC socket

IC systems

IC technology

IC-MS Coupling

ICS-NMR

ICS-UNIDO program, EDPs waste management

ICSS thresholds

Ibuprofen ic acid

Ic-Carrageenan

Icli studies

Ih and ice Ic

Integrated composite spinning (ICS)

Internal Conversion (IC)

Ion Chromatograph)- (IC)

Phenol ics

Poly ICs

Polymer-CD-ICs

Preparation of Planar Thin Films for Non-IC Applications Using CMP

Reading Low Level Data Inside the IC Chips

Road map for the development of 2.5-D ICs

Selecting the Controller IC

Separator TSK Gel IC Cation

Single-Column IC

Small-outline ICs

Star Ion A300 IC Anion

Suffix ic acid

Synthesis of ICs

TSK Gel IC Cation

Thermodynam ics

Valveless Injection IC

Vulp(in)ic acid

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