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Silicon single-crystal

Wark, Whitlock, and co-workers [72]-[75] extend these ideas in shock compression of < 111 >-oriented silicon single crystals. The method of producing the shock wave differs from previous X-ray diffraction studies, but the basic concepts are the same. Higher X-ray fluences result in a time resolution of 0.05-0.1 ns. This permits a sequence of exposures at various irradiances and delay times, thus mapping the interatomic spacing of the shock-compressed surface as a function of time. [Pg.249]

Beiminghoven, A., "Static SIMS Applications—From Silicon Single Crystal Oxidation to DNA Sequencing, /. Vac. Sci. Technol. A, Vol. 3,1985,pp. 451 60. [Pg.36]

Silicon Single Crystals and Integrated Circuits in Commerce... [Pg.308]

Silicon single-crystal pulling electromagnets, 23 857 Silicon smelting, environmental impact of, 22 521... [Pg.842]

Silicon has been and will most probably continue to be the dominant material in semiconductor technology. Although the defect-free silicon single crystal is one of the best understood systems in materials science, its electrochemistry to many people is still a matter of alchemy. This view is partly a result of the interdisciplinary aspects of the topic Physics meets chemistry at the silicon-electrolyte interface. [Pg.281]

Two popular means of growing silicon single crystals are molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) se a beam... [Pg.317]

The XAS spectrometer is similar to a UV-visible system in that it consists of a source, a monochromator, and a detector. The most favorable XAS source, synchrotron radiation, is tunable to different wavelengths of desirable high intensity. A laboratory instrument for analysis of solids and concentrated solutions may use a rotating anode source (further described in Section 3.3). The monochromator for X-ray radiation usually consists of silicon single crystals. The crystals can be rotated so that the wavelength ( i) of the X-rays produced depends of the angle of incidence (0) with a Bragg lattice plane of... [Pg.79]

When materials are irradiated by X-rays, several effects occur, e.g. absorption, scattering, and X-ray fluorescence. The heat should be generated by the absorption of electro-magnetic wave even by X-ray as shown in Fig. 1. The heat generation was actually observed in, for example, the deterioration of a silicon single crystal by strong X-ray. However, so much attention has not been paid in scientific sense to this phenomena. [Pg.146]

Electrochemical properties of silicon single crystals, usually cuts of semiconductor wafers, have to be considered under two distinct respects (1) As an electrode, silicon is a source of charge carriers, electrons or positive holes, involved in electrochemical reactions, and whose surface concentration is a determining parameter for the rate of charge transfer. (2) As a chemical element, silicon material is also involved in redox transformations such as electroless deposition, oxide generation, and anodic etching, or corrosion processes. [Pg.308]

The etch rate of silicon in KOH may vary from as low as 0.1 nm s in dilute solution at room temperature to as high as 200 nm s in 40% KOH near 90 °C. The etch rate of silicon single crystals always depends on the surface plane orientation in all dissolving solutions, but the effect is maximum for alkaline solutions. The (111) surface is the slowest etching plane in all reported investigations. This result can be convincingly correlated by the back bond theory, that is, the surface atoms on the (111) plane have 3 bonds connected to... [Pg.326]

Becker, P (2003), Tracing the definition of the kilogram to the Avogadro constant using a silicon single crystal. Metrologia, 40 (6), 366-75. [Pg.226]

Figure 10. Oblique effect on profile and integrated intensity of reflection of silicon single crystal (40)... Figure 10. Oblique effect on profile and integrated intensity of reflection of silicon single crystal (40)...
A characteristic of the early neutron reflectivity studies of nonionic surfactant adsorption was some variability in the pattern of adsorption. This was investigated in more detail and more systematically by McDermott et al. [55], who compared the adsorption of Ci2E6 onto a range of different substrates, amorphous silica, crystalline quartz, and the oxide layer on a silicon single crystal. The adsorbed surfactant was found to form a bilayer with an overall thickness 49 4 A, with a structure similar to that determined in the previous studies (see Fig. 4). [Pg.100]

A Novel Liquid Xenon IR Cell Constructed from a Silicon Single Crystal... [Pg.837]

For the manufacture a cylindrical silicon single crystal is first sawed to produce the outer windows. In a second step the probe room is drilled out After final polishing of the inner and outer windows the cell can be fixed with only one lead gasket to the cryostat body. It is essential that the cell frame is made from Vacodil 36. This steel has nearly the same coefficient of expansion as silicon and allows the gas-tight connection between the cell and the cryostat body (see Fig. 1). [Pg.837]

Koenig BW, Krueger S, Orts WJ, Majkrzal CF, Berk NF, Silverton JV, Gawrisch K. Neutron reflectivity and atomic force microscopy studies of a lipid bilayer in water absorbed to the surface of a silicon single crystal. Langmuir 1996 12 1343-1350. [Pg.2234]


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See also in sourсe #XX -- [ Pg.207 ]

See also in sourсe #XX -- [ Pg.837 ]




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