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Carbon nanotubes transistors

Klinke, C. Chen, J. Afzali, A. Avouris, P. 2005. Charge transfer induced polarity switching in carbon nanotube transistors. Nano Lett. 5 555-558. [Pg.344]

Bachtold, A. Hadley, P. Nakanishi,T. Dekker, C. 2001. Logic circuits with carbon nanotube transistors. Science 294 1317-1320. [Pg.375]

Javey, A. et al. 2002. High-kappa dielectrics for advanced carbon-nanotube transistors and logic gates. Nature Mater. 1 241-246. [Pg.445]

Lerner, M.B., et al., Hybrids of a genetically engineered antibody and a carbon nanotube transistor for detection of prostate cancer biomarkers. ACS Nano, 2012. 6(6) p. 5143-5149. [Pg.158]

Perello DJ, Chulim S, Chae SJ et al (2010) Anomalous Schottky barriers and contact band-to-band tunneling in carbon nanotube transistors. ACS Nano 4 3103-3108... [Pg.168]

Yu WJ, Kim UJ, Kang BR et al (2009) Adaptive logic circuits with doping-free ambipolar carbon nanotube transistors. Nano Lett 9 1401-1405... [Pg.169]

Rosenblatt S, Yaish Y, Park J et al (2002) High performance electrolyte gated carbon nanotube transistors. Nano Lett 2 869-872... [Pg.169]

Huang SC, Artyukhin AB, Misra N et al (2010) Carbon nanotube transistor controlled by a biological ion pump gate. Nano Lett 10 1812-1816... [Pg.170]

Carbon Nanotube Transistors - Chemical Functionalisation and Device Characterisation... [Pg.567]

Wang, L., Fine, D., Torsi, L., and Dodabalapur, A., Nanoscale organic and polymeric field-effect transistors as chemical sensors. Anal. Bioanal. Chem., 384, 310, 2006. Gruner, G., Carbon nanotube transistors for biosensing applications. Anal. Bioanal. Chem., 384, 322, 2006. [Pg.528]

Bondavalli, E, Legagneux, P. and Pribat, D. (2008), Gas fingerprinting using carbon nanotubes transistors anays. Journal Experimental Nanosdence,i,Ml-56. [Pg.381]

Derycke, V., Martel, R., Appenzeller, J. and Avouris, R (2002), Controlling doping and carrier injection in carbon nanotube transistors . Applied Physics Letters, 80,2773-5. [Pg.382]

Figure 3.8 EFM phase images upon light switching for (a) photosensitive polymer-coated Si02/Si substrates and (b) polymer-coated SWNTs with a tip bias at -3 and +3 V, respectively. The conventional corresponding AFM height images are shown in (c) and (d). Reprinted (adapted) with permission from Shi, Y. et Photoconductivity from Carbon Nanotube Transistors Activated by Photosensitive Polymers. The Journal of Physical Chemistry C, 2008. 112(46) pp. 18201-18206. Copyright (2008) American Chemical Society. Figure 3.8 EFM phase images upon light switching for (a) photosensitive polymer-coated Si02/Si substrates and (b) polymer-coated SWNTs with a tip bias at -3 and +3 V, respectively. The conventional corresponding AFM height images are shown in (c) and (d). Reprinted (adapted) with permission from Shi, Y. et Photoconductivity from Carbon Nanotube Transistors Activated by Photosensitive Polymers. The Journal of Physical Chemistry C, 2008. 112(46) pp. 18201-18206. Copyright (2008) American Chemical Society.
It has been proposed that nanotube-based transistors can operate at frequencies in the terahertz region as generators, frequency multipliers and detectors [84] though carbon nanotube transistors are good candidates for RF and opto electronics [85], fabrication of nanotube arrays with controllable chirality and diameters is stiU a challenge for large scale fabrication of the devices. [Pg.374]

Liu, J., and McEuen, P.L. (2005) Band structure, phonon scattering, and the performance limit of single-walled carbon nanotube transistors. Phys. Rev. Lett, 95. [Pg.374]

Auvray S, Borghetti J, Goffman MF, Filoramo A, Derycke V, Bourgoin JP (2005) Carbon nanotubes transistor optimization by chemical control of nanotubes-metal interface. Appl Phys Lett 84(25) 5106 Bachtold A, Hadley P, Nakanishi T, Dekker C (2001) Logic circuits with carbon nanotube transistors. Science 294(5545) 1317-1320... [Pg.30]

For example, Collins et al. (2001) proposed a method based on the selective destruction of metallic nanotubes, which could be realized with bursts of electricity. The ropes containing both semiconducting and metallic tubes are deposited on a flat surface of silicon oxide. Then electrodes on the top of the ropes are fabricated by lithography technique. A voltage is applied to the tubes through the electrodes. The metallic CNTs are destroyed by current-induced oxidation, and only the semiconducting tubes remain (carbon nanotubes transistors, http //www.research.ibm.com). However, this technique is only useful for transistor geometries and cannot be extended to bulk separation. [Pg.391]

Gruner G (2006) Carbon nanotube transistors for biosensing applications. Anal Bioanal Chem 384 322-335. doi 10.1007/s00216-005-3400-4... [Pg.259]

Aikawa, S., Einarsson, E., Thurakitseree, T., Chiashi, S., Nishikawa, E., Maruyama, S., 2012. Deformable transparent aU-carbon-nanotube transistors. Applied Physics Letters 100,... [Pg.393]


See other pages where Carbon nanotubes transistors is mentioned: [Pg.170]    [Pg.227]    [Pg.51]    [Pg.62]    [Pg.73]    [Pg.375]    [Pg.375]   
See also in sourсe #XX -- [ Pg.336 , Pg.337 ]




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Single-walled carbon nanotube field effect transistor

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