Doping of

The difficulty of obtaining pure / -material for the electrolyte has been tackled in many production processes worked out in the past. Unless precautions are taken, sintering of cr-alumina-derived / -alumina compositions invariably results in the duplex microstructure and a low-strength ceramic. Therefore a balance has to be struck between conductivity and strength. The problem arises because the conversion from / -alumina to / -alumina is slow compared with a rapid densification and grain growth. Barrow and Duncan have classified the process into four main routes 119]  

The results of development work on processes indicate that the two main methods of preventing the duplex microstructure from forming appear to be fa.st-firing, or increasing the amount of yff -alumina at low temperatures. Based on these results, Duncan et al. [20] and Zyl et al. [21] have described production processes starting from aluminum oxy-hydroxides or aluminum hydroxides as precursors for the synthesis of the solid electrolyte -alumina. Duncan et al. described an alumina precursor which substitutes in part or wholly for a-alumina in an established 

A comparison of boehmite with other raw materials is included in Table 6. In this table the soda and lithia contents of compositions based on a range of raw materials and the resultant properties are detailed. The level of yff -alumina was always higher with the hydrate-type raw material the hydrothermally prepared raw materials gave the highest content of yff -alumina. 

The overall manufacturing process of yff -alumina tubes can be subdivided into the production stages powder preparation. 

Raw material NajO (wt%) Li,0 (wt%) /) -Alumina % I200 C 1617 C 6 min 20 min Fired density (gem ) Strength by Bortz ring test (MNm ) 

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Doping of the siHcon can have a large effect on the etch rate, and layers of different materials such as Si02 and Si N can have different etch rates. Eor pressure sensors, thin diaphragms of Si or related materials are etched into the wafer (see Pressure measurements). 

J. Guldberg, ed., Neutron-Transmutation-Doped Silicon, Proceedings of the Third International Conference on Transmutation Doping of Silicon, Copenhagen, Denmark, Plenum Press, Inc., New York, 1981. 

The doping of Ceo with alkali metals creates carriers at the Fermi level in the tiu-derived band and decreases the electrical resistivity p of pristine solid Ceo by several orders of magnitude. As x in Ma C6o increases, the resistivity p(.-r) approaches a minimum at x = 3.0 0.05 [9, 112], corresponding to a half-filled flu-derived conduction band. Then, upon further increase in x from 3 to 6, p x) again increases, as is shown in Fig. 11 for various alkali metal dopants... 

Modifications of the conduction properties of semiconducting carbon nanotubes by B (p-type) and N ( -type) substitutional doping has also been dis-cussed[3l] and, in addition, electronic modifications by filling the capillaries of the tubes have also been proposed[32]. Exohedral doping of the space between nanotubes in a tubule bundle could provide yet an-... 

Other mechanism for doping the tubules. Doping of the nanotubes by insertion of an intercalate species between the layers of the tubules seems unfavorable because the interlayer spacing is too small to accommodate an intercalate layer without fracturing the shells within the nanotube. 

No superconductivity has yet been found in carbon nanotubes or nanotube arrays. Despite the prediction that ID electronic systems cannot support supercon-ductivity[33,34], it is not clear that such theories are applicable to carbon nanotubes, which are tubular with a hollow core and have several unit cells around the circumference. Doping of nanotube bundles by the insertion of alkali metal dopants between the tubules could lead to superconductivity. The doping of individual tubules may provide another possible approach to superconductivity for carbon nanotube systems. 

Raman spectra have also been reported on ropes of SWCNTs doped with the alkali metals K and Rb and with the halogen Br2 [30]. It is found that the doping of CNTs with alkali metals and halogens yield Raman spectra that show spectral shifts of the modes near 1580 cm" associated with charge transfer. Upshifts in the mode frequencies are observed and are associated with the donation of electrons from the CNTs to the halogens in the case of acceptors, and downshifts are observed for electron charge transfer to the CNT from the alkali metal donors. These frequency shifts of the CNT Raman-active modes can in principle be u.sed to characterise the CNT-based intercalation compound for the amount of intercalate uptake that has occurred on the CNT wall. 

Doping of alkali-metals into CNTs has been examined [11]. The X-ray powder diffraction (XRD) patterns of the K- or Rb-doped CNTs show that alkali-metals are intercalated between the CNT layers. The hexagonal unit cell is essentially the same as that of the stage-1 alkali-metal intercalated graphite ACg (A=K, Rb). For a sample doped with Rb, the observed lattice parameter of the perpendicular... 

An alternative approach to stabilizing the metallic state involves p-type doping. For example, partial oxidation of neutral dithiadiazolyl radicals with iodine or bromine will remove some electrons from the half-filled level. Consistently, doping of biradical systems with halogens can lead to remarkable increases in conductivity and several iodine charge transfer salts exhibiting metallic behaviour at room temperature have been reported. However, these doped materials become semiconductors or even insulators at low temperatures. 

Conducting polymers with p-phenylene groups in the backbone can be generated by the metathetical reaction shown in Eq. 14.1. Doping of these polymers with acceptors such as h. Bra, or AsFs increases the conductivity to ca. lO " cm. ... 

The first use of ionic liquids in free radical addition polymerization was as an extension to the doping of polymers with simple electrolytes for the preparation of ion-conducting polymers. Several groups have prepared polymers suitable for doping with ambient-temperature ionic liquids, with the aim of producing polymer electrolytes of high ionic conductance. Many of the prepared polymers are related to the ionic liquids employed for example, poly(l-butyl-4-vinylpyridinium bromide) and poly(l-ethyl-3-vinylimidazolium bis(trifluoromethanesulfonyl)imide [38 1]. 

Pseudocapacitance is used to describe electrical storage devices that have capacitor-like characteristics but that are based on redox (reduction and oxidation) reactions. Examples of pseudocapacitance are the overlapping redox reactions observed with metal oxides (e.g., RuO,) and the p- and n-dopings of polymer electrodes that occur at different voltages (e.g. polythiophene). Devices based on these charge storage mechanisms are included in electrochemical capacitors because of their energy and power profiles. 

The transition from non-protective internal oxidation to the formation of a protective external alumina layer on nickel aluminium alloys at 1 000-1 300°C was studied by Hindam and Smeltzer . Addition of 2% A1 led to an increase in the oxidation rate compared with pure nickel, and the development of a duplex scale of aluminium-doped nickel oxide and the nickel aluminate spinel with rod-like internal oxide of alumina. During the early stages of oxidation of a 6% A1 alloy somewhat irreproducible behaviour was observed while the a-alumina layer developed by the coalescence of the rodlike internal precipitates and lateral diffusion of aluminium. At a lower temperature (800°C) Stott and Wood observed that the rate of oxidation was reduced by the addition of 0-5-4% A1 which they attributed to the blocking action of internal precipitates accumulating at the scale/alloy interface. At higher temperatures up to 1 200°C, however, an increase in the oxidation rate was observed due to aluminium doping of the nickel oxide and the inability to establish a healing layer of alumina. 

The other way to produce EL devices is based on a pin junction [47]. A pin junction with conjugated polymers was realized by electrochemical doping of the... 

The PES measurements arc performed with reference to the Fermi level of the photoclectron spectrometer, in solid specimens, as dealt with here, by the way the spectroscopy works. Thus, in cases when the Fermi level shifts due to some chemical modifications of the sample, i.e., in the intercalation of graphite or other layered compound [16] or in the doping of conjugated polymers 1171, il is necessary to account for the change in the Fermi energy level before interpreting spec-... 

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