Chemical Composition of Doped PLD ZnO Films and Doping Effects

5 Chemical Composition of Doped PLD ZnO Films and Doping Effects 

Because the current research efforts on the 11-VI semiconductor ZnO are directed for example to blue and UV-optoelectronic devices, the cleanness requirements of the established semiconductor processes should be applied also for ZnO, if possible. To get a first estimate about the trace element contamination of the PLD ZnO films, we analyzed two undoped ZnO thin films by PIXE/RBS for their trace element concentration [65] as given in Table 7.8. For most elements listed in Table 7.8, the detected trace element 

To provide an extended overview on the various PLD-based activities of the Leipzig Semiconductor Physics Group, Table 7.9 summarizes the published investigations on ZnO-based thin films. The dopants were arranged in four groups, namely (1) the n-type donors A1 and Ga, (2) the potential 

The dopant oxide is used for target preparation and the evaporation temperatures of the dopant elements partially explain the deviations of the transfer factor from 1.0 

The PLD target was sintered from 99.9995 at. % ZnO powder. DL is the minimum detection limit of the combined PIXE/RBS analysis with 1.2 MeV protons. Each wafer (32.8 mm diameter) was analyzed at center (c) and edge (e) position. Measured by D. Spemann 

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