Doping ion implantation

Equation (10.1) can be used to determine the doping density of a silicon substrate and its depth profile, even if the flat band potential is not known accurately. Diffusion doping, ion implantation or the growth of an epitaxial layer are common methods of producing doped regions in semiconductor substrates. The dopant concentration close to the surface can be measured by SRP or capacitance-... 

Modified by the addition, as applicable, of impurity diffusion (doping), ion implantation, epitaxy, etc. The active surface is processed into arrays of discrete devices or integrated circuits by metallization, passivation, or other means metallization of its back side (bottom surface) is optional. 

As is well known for various kinds of semiconductors, there are three ways to dope impurities vapor-phase doping, ion implantation, and diffusion. Following are short reviews of doping technologies for B in diamond. 

Dielectric Film Deposition. Dielectric films are found in all VLSI circuits to provide insulation between conducting layers, as diffusion and ion implantation (qv) masks, for diffusion from doped oxides, to cap doped films to prevent outdiffusion, and for passivating devices as a measure of protection against external contamination, moisture, and scratches. Properties that define the nature and function of dielectric films are the dielectric constant, the process temperature, and specific fabrication characteristics such as step coverage, gap-filling capabihties, density stress, contamination, thickness uniformity, deposition rate, and moisture resistance (2). Several processes are used to deposit dielectric films including atmospheric pressure CVD (APCVD), low pressure CVD (LPCVD), or plasma-enhanced CVD (PECVD) (see Plasma technology). 

Diffusion. Another technique for modifying the electrical properties of siUcon and siUcon-based films involves introducing small amounts of elements having differing electrical compositions, dopants, into substrate layers. Diffusion is commonly used. There are three ways dopants can be diffused into a substrate film (/) the surface can be exposed to a chemical vapor of the dopant at high temperatures, or (2) a doped-oxide, or (J) an ion-implanted layer can be used. Ion implantation is increasingly becoming the method of choice as the miniaturization of ICs advances. However, diffusion is used in... 

Fig. 5. Bipolar transistor (a) schematic and (b) doping profiles of A, arsenic ion implanted into the silicon of the emitter ( -type) B, boron ion implanted into the silicon of the base (p-type) C, antimony ion implanted into the buried layer ( -type) and D, the epi layer...

Aqueous Corrosion. Several studies have demonstrated that ion implantation may be used to modify either the local or generalized aqueous corrosion behavior of metals and alloys (119,121). In these early studies metallic systems have been doped with suitable elements in order to systematically modify the nature and rate of the anodic and/or cathodic half-ceU reactions which control the rate of corrosion. 

Although there has been theoretical and experimental interest in the effects of ion bombardment on materials since about 1960 (153), the growth in ion implantation technology and appHcations since then is due almost solely to the semiconductor (integrated circuit) industry. The advantages of ion implantation for semiconductor doping were first pointed out in 1955 (154), but these advantages were not widely accepted until about 1970. 

Although a great number of compound semiconductor devices make use of epitaxy to form the cote vertical stmcture of the device, ion implantation (qv) is a powerful tool in creating both horizontal and vertical modifications to a device. Ion implantation can be used to dope a semiconductor either fi- or / -type by using appropriate species. Implantation can also be used to render a region semi-insulating or to initiate multilayer intermixing. 

Ion implantation has been successfully used to dope the IITSb material system. Sulfur has been used as an n-ty e dopant, although with poor activation efficiencies (175). -Type doping has been achieved using beryUium, zinc, and magnesium (175,176). Activation of the -type dopants is generally much better, near 50%. For the Sb-containing materials the post-implant anneal is conducted at much lower temperatures, typically <600° C. 

Ion implantation is a method commonly used for doping semiconductors. Because the concentrations of the dopants (mostly B and P) are very low, a dynamic range of more than five orders of magnitude is often necessary. Measurement of is more difficult than that of B, because of the mass interference of °Si H. High mass resolution of m/Am = 5000, or an energy offset of 300 V, is necessary. 

The uses of CVD silicon dioxide films are numerous and include insulation between conductive layers, diffusion masks, and ion-implantation masks for the diffusion of doped oxides, passivation against abrasion, scratches, and the penetration of impurities and moisture. Indeed, Si02 has been called the pivotal material of IC s.1 1 Several CVD reactions are presently used in the production of Si02 films, each having somewhat different characteristics. These reactions are described in Ch. 11. 

A variety of colors, such as green, amber, and red (and infrared), can be obtained with different semiconductor materials without the need for a filter (see Ch. 13, Table 13.4). A LED (or photodiode) device may consist of multiple diodes in an array operating in the reverse-bias mode. Patterns of light showing symbols, letters, or numbers can thus be produced with different colors obtained by doping the semiconductor material by CVD or ion implantation. 

As is well known, many experimental smdies have been made extensively to search for a possibility of encapsulation of atoms by hollow fullerenes since the discovery of Cgo by Kroto et al. [143]. These methods, however, usually require high tempratures and high pressures, or ion implantation. The yields are also as low as 0.4—10 %. In this sense, the efficiency in our case is much higher and the required conditions are much milder with collison energy of 2 eV. However, the boron substimtion is a bottle neck, although Smalley and co-workers successfully synthesized boron-doped fullerenes [144]. 

Implants at different energies can be used in order to obtain a flat doping ion distribution. 

NTD wafers were produced by irradiating natural ultra pure Ge crystals by means of a flux of thermal neutrons (see Section 15.2.2). To realize the electrical contacts, both sides of the wafers (disks, 3 cm in diameter, 3 mm thick) were doped by implantation with B ions to a depth of 200nm. The implanted layers are doped to such a high concentration that the semiconductor becomes metallic. Then a layer of Pd (about 20 nm) and Au (about 400 nm) was sputtered onto the both sides of the wafers. Finally, the wafers were annealed at 200°C for 1 h. The wafers are cut to produce thermistors of length 3 mm between the metallized ends (3x3x1 mm3 typical size) the electrical contacts are made by ball bonding with Au wires. 

To get a very heavily doped layer, two techniques can be used diffusion or ion implantation. 

The next step was the introduction of ion implantation to dope Si for thermometers. Downey et al. [66] used micromachining to realize a Si bolometer with an implanted thermometer. This bolometer had very little low-frequency noise. The use of thermometers doped by neutron transmutation instead of melt doping is described by Lange et al. [67], The evolution of bolometers sees the replacement of the nylon wires to make the conductance to the bath, used by Lange et al. with a micromachined silicon nitride membrane with a definite reduction in the heat capacity associated to the conductance G [68],... 

We believe that the luminescence at 1.0 eV is due to a structural damage induced by ion implantation rather than to a chemical doping effect, since the spectrum does not depend on the chemical species of the ion. These centers may be similar to the vacancies induced by 3-MeV electron-beam irradiation, as reported by Troxell and Watkins (1979), who find donorlike and acceptorlike levels —0.1 eV from the band edges. 

At low temperatures, donors and acceptors remain neutral when they trap an electron hole pair, forming a bound exciton. Bound exciton recombination emits a characteristic luminescence peak, the energy of which is so specific that it can be used to identify the impurities present. Thewalt et al. (1985) measured the luminescence spectrum of Si samples doped by implantation with B, P, In, and T1 before and after hydrogenation. Ion implantation places the acceptors in a well-controlled thin layer that can be rapidly permeated by atomic hydrogen. In contrast, to observe acceptor neutralization by luminescence in bulk-doped Si would require long Hj treatment, since photoluminescence probes deeply below the surface due to the long diffusion length of electrons, holes, and free excitons. 

Group III organometallics, gas-ohase decomposition of, 22 156 Group 3 (IIIB) perchlorates, 28 278 Group Ill-Sb system, ion implantation doping of, 22 187... 

Semiconductor device manufacture, high purity oxygen in, 13 459 Semiconductor doping, in ion implantation, 14 446-447... 

Coloma F, Marquez F, Rochester CH, Anderson JA (2000) Determination of the nature and reactivity of copper sites in Cu-Ti02 catalysts. Phys Chem Chem Phys 2 5320-5327 Umebayashi T, Yamaki T, Itoh H, Asai K (2002) Analysis of electronic structures of 3d transition metal-doped Ti02 based on band calculations. J Phys Chem Solids 63 1909-1920 Yamashita H, Ichihashi Y, Takeuchi M, Kishiguchi S, Anpo M (1999) Characterization of metal ion-implanted titanium... 

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