Annealing post implantation

Ion implantation has been successfully used to dope the IITSb material system. Sulfur has been used as an n-ty e dopant, although with poor activation efficiencies (175). -Type doping has been achieved using beryUium, zinc, and magnesium (175,176). Activation of the -type dopants is generally much better, near 50%. For the Sb-containing materials the post-implant anneal is conducted at much lower temperatures, typically <600° C. 

Ion implantation is widely used in semiconductor device technology to locally alter the electrical properties of materials. Since only the electrical properties are generally of interest, the optical properties of implanted semiconductors are not often reported in detail, despite the excellent sensitivity of optical investigation to the removal of damage by post-implantation thermal annealing. Optical measurements could be useful to GaN researchers seeking an optimal post-implant annealing procedure. 

The samples were formed by implanting of lO cm" Si ions into SiOz layers. The Si ion energy was 140keV. Two types of samples were employed for irradiation with 130 MeV Xe ions as-implanted with Si, and those subjected to post-implantation annealing at 1100 C to form Si-ncs. The doses of Xe ions were ranging from 3xl0 to 10 cm. Additionally, passivating anneals in... 

Silicon-on-insulator (SOI) structures are widely applied in microelectronics. The SOI structures are usually produced by oxygen implantation into Si followed by post-implantation annealing up to 1600K and above (HT) [1], Processing of Si implanted with oxygen (Si 0) at enhanced hydrostatic pressure and 1500 K has been reported to result in the formation of specific layered structures with strongly HP-dependent quality of the SiOx/Si interface [2-4]. 

Ghezzo et al [13] reported on ion implanted planar p-n junction 6H-SiC diodes fabricated by ion implantation of B into n-type SiC with the donor concentration of 9x 1015cm 3. The implantation was performed at 25 °C and 1000°C followed by a 1300°C post-implant furnace anneal. The diodes had an ideality factor of 1.77 at room temperature, the reverse leakage current of 1 O 10 A cm 2 at -10 V and the reverse breakdown voltage of -650 V. 

Jeonga, T.S., Hana, M.S., Kima, J.H., Youna, C.J., Ryub, Y.R. and White, H.W. (2005) Crystallinity-damage recovery and optical property of As-implanted ZnO crystals by post-implantation annealing. Journal of Crystal Growth, 275, 541. 

Baur et al [3] first observed a defect-related PL exhibiting an NP line at 0.931 eV in their unintentionally doped samples. They attributed this PL to the 3T2 — 3A2 transition of V3+. Kaufmann et al [15] performed intentional doping of GaN with V by ion implantation. They found a PL at 0.82 eV after post-growth annealing, which they attribute to a V-related radiation defect. 

The nc-Si were fabricated by ion implantation of Si into fused quartz and crystalline C-cut sapphire at energies of 140 and 100 keV, respectively, to a dose of 1-lO cm. The samples were post-annealed at 1100 °C in dry nitrogen for 2 h. The transmission electron microscopy (TEM) showed the ensembles of nc-Si with average size of 3.2 nm and less than 12 nm non-uniformly distributed in Si02 and AI2O3 at the depths up to 200 and 350 nm, respectively [1,2]. 

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