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Silicon dioxide films

Xu X and Goodman D W 1992 New approach to the preparation of ultrathin silicon dioxide films at low temperature Appl. Phys. Lett. 61 774... [Pg.955]

The uses of CVD silicon dioxide films are numerous and include insulation between conductive layers, diffusion masks, and ion-implantation masks for the diffusion of doped oxides, passivation against abrasion, scratches, and the penetration of impurities and moisture. Indeed, Si02 has been called the pivotal material of IC s.1 1 Several CVD reactions are presently used in the production of Si02 films, each having somewhat different characteristics. These reactions are described in Ch. 11. [Pg.373]

For oxide CMP, the purpose of the solution is two fold. First, water weakens the Si—O bond in a silicon dioxide film and softens the surface as it becomes hydrated with Si—OH bonds [6,7]. Figure 10 shows the reaction mechanism. Second, the solution is to provide a basic environment (pH > 10), which accelerates the hydration rate. An environment with high pH values will allow the polishing-induced reaction to be further accelerated because the surface Si(OH) species will be partially dissolved into water. In the meantime, the zeta potential of silica increases with increasing pH values. At high zeta potentials silica particles will repel each other, whereby a better-suspended slurry is formed. [Pg.146]

The properties of silicon dioxide films also depend upon all plasma deposition parameters. Temperature is the critical parameter (240), although the compressive stress level varies with rf frequency (237, 240). Film topography can be varied during deposition by altering ion bombardment conditions (242, 243). In particular, the incorporation of Ar in the deposition atmosphere enhances sputtering and thus promotes conformal step coverage during film formation (243). [Pg.438]

Silicon dioxide films have been an essential factor in the manufacture of integrated circuits from the earliest days of the industry. They have been used as a final passivation film to protect against scratches and to getter mobile ion impurities (when doped with phosphorus). Another application has been as an interlayer dielectric between the gate polysilicon and the aluminum metal-ization. Initially, most such films were deposited in atmospheric pressure systems. In recent years, low pressure processes have assumed greater importance. We will begin by examining the atmospheric process. [Pg.66]

PECVD of silicon nitride has been of commercial importance since 1976.1 The original motivation was to find a final passivation layer for an integrated circuit that would replace the doped silicon dioxide films then in use. The latter were not reliable enough to permit packaging of integrated circuits in plastic. Silicon nitride was recognized as a better final passivation film, but the only available technique for its deposition was the high-temperature thermal process. Since it had to cover an aluminum final metallization layer that would melt at 600°C, this clearly could not work. The solution was to use PECVD at 350° to 400°C. [Pg.120]

As long as the film is not reflective (i.e., specular aluminum) and is deposited on a reflective substrate (i.e., Si02 on silicon), optical techniques are available. It was recognized early that the color of a thin film could be correlated to its thickness. Although not very precise, such information is very useful for quick evaluation in the laboratory. For example, silicon dioxide films on silicon substrates can be evaluated with the data of Table 1. In fact, one of the more useful aspects of this technique is that one can make rapid judgements as to film uniformity. [Pg.177]

There are a number of subtle effects that have to be considered when making thin film stress measurements on silicon wafers First of all, the crystal orientation of the wafer Influences the resulting stress. The same thermal CVD silicon dioxide film thickness on the same substrate indicates larger tensile stresses on (100)-oriented wafers as compared with (111 (-oriented wafers. [Pg.183]

The ellipsometric technique described earlier has the unique feature that the index of refraction can be determined independently of the film thickness. Then, knowledge of this index can be used to infer the chemical composition of a film. For example, thin silicon dioxide films have an index of 1.46, while silicon nitride films have a value of 2.0 typically. Now, when either of these films are deposited by PECVD techniques, their stoichiometry can vary depending on deposition conditions. It turns out that this variation in stoichiometry can be related to the measured refractive index. Accordingly, measurements of the refractive index can be used as an approximate guide to film stoichiometry. [Pg.190]

T. Maruyama and J. Shionoya, Silicon Dioxide Films Prepared by Chemical Vapour Deposition from Silicon Tetraacetate , Jap. J. Appl. Rhys., 28 [12] L2253-54 (1989). [Pg.114]

When polishing silicon dioxide films, it is often observed that on a per abrasive particle basis, ceria polishes planar surfaces significantly more effectively than silica [15]. For example, as shown in Fig. 13.5, the polishing rate for planar silicon dioxide is higher with slurry containing 0.5 wt% of ceria than that for silica-based slurries containing 13 wt% of silica. [Pg.373]

In essence, STI CMP and ILD CMP are in a similar category. They are both required to remove certain amount of silicon dioxide film from the wafer surface. They are both dominated by mechanical actions. Therefore, the particle characteristics of the slurry are very important. In general, the material removal rate is proportional to the particle size. In a study reported by Park et al. [35], over a wide range of experimental conditions the oxide removal rate decreased with decreasing abrasive size. As abrasive particles play a significant role in determining the overall removal rate and surface quality, it is important to examine the relative importance of the mean particle size and particle size distribution. [Pg.388]

In the production of many microelectronic devices, continuous chemical vapor deposition (CVD) processes are used to deposit thin and exceptionally uniform silicon dioxide films on silicon wafers. One CVD process involves the reaction between silane and oxygen at a very low pressure. [Pg.478]

Chemical etching is a process for removal of silicon dioxide films through dissolution in solutions. Dissolution of silicon oxides, in the context of this book, is related to the anodic behavior of silicon electrodes. However, the dissolution of anodic oxides is not well studied. In contrast, there is a wealth of information on the dissolution of other types of oxides. Much of this information must also be applicable, at least the qualitative and mechanistic nature, to that of anodic oxides. Also, because oxides of different types are commonly used in device fabrication, compiling the etch rate data of these oxides and those of silicon (presented in Chapter 7) in the same volume would be useful in practice. Additionally, because silica-water interaction, which has been extensively investigated in the geological field, is fundamental to the etching of silicon oxides, some of the results from the investigations on the dissolution of rocks and sands are also included. [Pg.131]

C. M. Osburn and E. J. Weitzman, Electrical conduction and dielectric breakdown in silicon dioxide films on sihcon, J. Electrochem. Soc. U9, 603, 1972... [Pg.464]

M. Aitken and E. A. Irene, Silicon dioxide films in semiconductor devices, in Treatise on Materials Science and Technology, Vol.26, p.l. Academic Press, New York, 1985. [Pg.471]

A. G. Revesz, The defect structure of grown silicon dioxide Films, IEEE Trans. Electron Devices 12, 97, 1965. [Pg.475]

R. A. Haken, I. M. Baker, and J. D. E. Beynon, An investigation into the dependence of the chemically-etched edge profiles of silicon dioxide films on etchant concentration and temperature, Thin Solid Films 18, S3, 1973. [Pg.483]

C.E. Megiris and J.H.E. Glezer, Preparation of silicon dioxide films by low-pressure chemical vapor deposition on dense and porous alumina substrates. Chem. Eng. Sci., 3925 (1992) 47. [Pg.563]

The electrical properties of the film were comparable to that of silicon dioxide films. Apparently, the obtained barrier aluminium oxide film can be seen as an excellent gate dielectric for organic field-effect transistors on flexible substrates. [Pg.511]

As with metals, semiconductors are also subject to passivation. Figure 22.9 shows the anodic dissolution and the passivation of n-type and p-type silicon electrodes in sodium hydroxide solution [13]. Silicon dissolves in basic solution in the form of soluble divalent silicon, Si(OH),iq or Si(OH)2jaq, and passivates forming a silicon dioxide film. [Pg.546]

Tb-implanted thermally grown silicon dioxide film, and (iii) Tb-doped alumina xerogels fabricated onto monocrystalline silicon. Thus, the terbium-doped alumina xerogel/PAA structure was proposed as a basis for green room-temperature luminescent images [17]. [Pg.465]


See other pages where Silicon dioxide films is mentioned: [Pg.1885]    [Pg.54]    [Pg.328]    [Pg.142]    [Pg.153]    [Pg.496]    [Pg.151]    [Pg.156]    [Pg.332]    [Pg.40]    [Pg.196]    [Pg.486]    [Pg.229]    [Pg.94]    [Pg.125]    [Pg.464]    [Pg.464]    [Pg.469]    [Pg.34]    [Pg.1813]    [Pg.226]    [Pg.427]    [Pg.1885]    [Pg.547]    [Pg.31]   
See also in sourсe #XX -- [ Pg.197 , Pg.268 , Pg.284 ]

See also in sourсe #XX -- [ Pg.197 , Pg.268 , Pg.284 ]




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