Resonant gate transistor

H.C. Nathanson, W. E. Newell, R.A. Wickstrom, J.R. Davis, The resonant gate transistor, IEEE Trans. Electron Devices ED-14, 117-133, 1967. 

Nathanson HC, Newell WE, Wickstrom RA et al (1967) The resonant gate transistor. IEEE Transactions on Electron Devices 14 117-133. 

The typical thin films that are deposited include semiconductors (e.g., polysilicon), insulators (e.g., silicon nitride), and metals (e.g., aluminum). In addition, some layers are grown (oxide), diffused, or implanted (dopants) rather than deposited using thin-film techniques. A cross section of a complementary metal oxide semiconductor (CMOS) process that includes six levels of metal is shown in Figure 1.2 [1]. A schematic diagram of one of the first MEMS devices, which used semiconductor processing for fabrication, the resonant gate transistor, is shown in Figure 1.3 [2]. 

Figure 1.3 The resonant gate field effect transistor, one of the first MEMS devices. A released metal cantilever beam forms the gate electrode over the diffused source-drain channel. The input signal is applied to the input force plate, which causes the cantilever beam to vibrate, modulating the current through the transistor. Maximum vibration occurs at the resonant frequency of the cantilever beam, enabling the device to act as a high-Q electromechanical filter. (Reprinted with permission from IEEE Trans. Electron Devices, The resonant gate transistor, H.C. Nathanson, W.E. Newell, R.A. Wickstrom and J.R. Davis Jr., 1967 IEEE.)...

The resonant gate transistor, IEEE Trans. Electron Devices 14, p. 117 (1967). 

But why does pulling the molecule gate the transport This has to do with the specific properties of PTCDA/ Ag(l 11) that have been discussed in Section 12.2. As the molecule is peeled off the surface, the metal-molecule 7i-bond is gradually cleaved. The schematic in Figure 12.5 shows that this dehybridisation must shift the former LUMO back up in energy and sharpens it. Resonant transport then enhances the slope of the I-V curves at low biases and thus yields the transistor-like output curves of Figure 12.13. ... 

The boron distribution inside the gate region of a transistor was investigated before and after diffusion with SNMS by employing a finely focused Ga ion gun for sputter removal, a so-called three-color resonance ionization of boron via three lasers with different wavelengths (249.7, 563, and 1064 nm) and mass analysis by TOR The beams were aimed at about 1.5 mm above the sample surface with intensities in the 10 -10 W/cm range and beam diameters of a few mm. With this setup the ionization of boron was saturated, but applied to phosphorus (with three UV photons), it was only about 10% [285]. 

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