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Circuits defined

The reference MSFR is a 3-GWth reactor with a total fuel salt volume of 18 operated at a maximum fuel salt temperature of 750°C (Mathieu et al., 2009 Merle-Lucotte et al., 2012). The system includes three circuits the fuel circuit, the intermediate circuit, and the power conversion circuit. The fuel circuit, defined as the circuit containing the fuel salt during power generation, includes the core cavity, the inlet and outlet pipes, a gas injection system, salt-bubble separators, pumps, and fuel heat exchangers. [Pg.159]

These benefits are demonstrated here. The top level of the carry-lookahead circuit, defined by the entity CLA, is dominated by intercon-... [Pg.192]

Silicon Epitaxy. A critical step ia IC fabricatioa is the epitaxial depositioa of sdicoa oa an iategrated circuit. Epitaxy is defined as a process whereby a thin crystalline film is grown on a crystalline substrate. Silicon epitaxy is used ia bipolar ICs to create a high resistivity layer oa a low resistivity substrate. Most epitaxial depositioas are doae either by chemical vapor depositioa (CVD) or by molecular beam epitaxy (MBE) (see Thin films). CVD is the mainstream process. [Pg.346]

Dielectric Film Deposition. Dielectric films are found in all VLSI circuits to provide insulation between conducting layers, as diffusion and ion implantation (qv) masks, for diffusion from doped oxides, to cap doped films to prevent outdiffusion, and for passivating devices as a measure of protection against external contamination, moisture, and scratches. Properties that define the nature and function of dielectric films are the dielectric constant, the process temperature, and specific fabrication characteristics such as step coverage, gap-filling capabihties, density stress, contamination, thickness uniformity, deposition rate, and moisture resistance (2). Several processes are used to deposit dielectric films including atmospheric pressure CVD (APCVD), low pressure CVD (LPCVD), or plasma-enhanced CVD (PECVD) (see Plasma technology). [Pg.347]

Deposition of Thin Films. Laser photochemical deposition has been extensively studied, especially with respect to fabrication of microelectronic stmctures (see Integrated circuits). This procedure could be used in integrated circuit fabrication for the direct generation of patterns. Laser-aided chemical vapor deposition, which can be used to deposit layers of semiconductors, metals, and insulators, could define the circuit features. The deposits can have dimensions in the micrometer regime and they can be produced in specific patterns. Laser chemical vapor deposition can use either of two approaches. [Pg.19]

Patent laws provide for several stages in the life of an application for a patent on an invention. The pattern followed by patent laws in effect in most industrialized countries during the nineteenth and early twentieth centuries, and still in effect in the United States in 1995, calls for the examination of all patent appHcations to certify that the claimed invention meets the national standards for novelty, usehilness, and inventiveness. The owner of the technology to be patented files appHcation papers that include a specification containing a description of the invention to be patented (called the disclosure) and claims defining the limits of the invention to be protected by the patent, a formal request for the issuance of a patent, and fees. Drawings of devices and apparatuses, electrical circuits, flow charts, etc, are an important part of the disclosures of most nonchemical and many chemical patents. [Pg.43]

Eigure 11 shows a schematic and collector characteristics for a common emitter n—p—n transistor circuit. The load line crossing these characteristics shows the allowed operation of the transistor with a supply voltage, = 12 V a load resistor, 7 = 2 and a bias resistor, 7 g = 20 kQ. The load line corresponds to the equation = 7 7 -H. Plotting the load line on the collector characteristics defines BJT behavior 0.6 V is required... [Pg.351]

Considerable effort has been directed to determining the causes of connection failutes and to learning how to minimize the likelihood of occurrence. Acceptable failute rates range from <1 in 10 operating hours for contacts in air-frame (31) electrical systems and in some telecommunications equipment, to 100—1000 in 10 operating hours in instmments, to even larger rates for contacts in many consumer products. A failute is defined as exceedance of contact resistance, which can be as Httle as twice the initial contact resistance, that causes circuit malfunction. The required lifetimes of connectors may be >20 yr, although most required appHcation times ate shorter (see Materials reliability). [Pg.32]

Resists. Resists are temporary, thin coatings appHed to the surface of the copper-clad laminate. After patterning, these films act as masks that are chemically resistant to the cleaning, plating, and etching solutions used to define the circuit traces of the PWB. Both nonphotosensitive and photosensitive types are used. [Pg.124]

Screenable Resists. Screenable resists or inks (qv) are appHed to the metal-clad substrate through a silk (qv), nylon, or stainless steel screen on which a circuit pattern has been defined. The coating is squeegeed through the stencil onto the substrate, then dried. Depending on whether metal is to be... [Pg.124]

Resists used to define circuit patterns are radiation-sensitive and may be either positive- or negative-working. As a result of the fine lines, there has been movement away from optical Hthography and iato the mid- or deep-uv regioas. Developmeatal work has also beea focused oa electroa beam, x-ray, and ion-beam exposure devices and resists (9,10). [Pg.126]

The type of duly defines the capacity of a switch or a contactor by the value of the current and the p.f. of the associated circuit, it can make or break on fault. For value.s of currents and p.f. for different duties, refer to the relevant standards as noted above. [Pg.312]

This can be defined by the most severe external fault at which the schetne will remain inoperative. It should also remain inoperative in healthy conditions. That is it should be immune to the momentary voltage or current transients and normal harmonic contents in the circulating current. Series LC-filter circuits are generally provided with the relay coil to suppress the harmonics and to detect the fault current more precisely. [Pg.482]

It should be ensured that under no condition of system disturbance w ould the filter circuit become capacitive when it approaches near resonance. To achieve this, the filter circuits may be tuned to a little less than the defined harmonic frequency. Doing so will make the L and hence Xl always higher than Xc, since... [Pg.745]


See other pages where Circuits defined is mentioned: [Pg.276]    [Pg.75]    [Pg.435]    [Pg.29]    [Pg.114]    [Pg.256]    [Pg.276]    [Pg.75]    [Pg.435]    [Pg.29]    [Pg.114]    [Pg.256]    [Pg.484]    [Pg.1122]    [Pg.2871]    [Pg.2926]    [Pg.3]    [Pg.10]    [Pg.291]    [Pg.482]    [Pg.416]    [Pg.129]    [Pg.434]    [Pg.183]    [Pg.353]    [Pg.528]    [Pg.538]    [Pg.49]    [Pg.110]    [Pg.111]    [Pg.112]    [Pg.125]    [Pg.1216]    [Pg.1839]    [Pg.1857]    [Pg.2429]    [Pg.133]    [Pg.183]    [Pg.345]    [Pg.364]    [Pg.503]    [Pg.685]   
See also in sourсe #XX -- [ Pg.326 ]




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