Chemical vapor deposition preparation

Meanwhile, CNTs with a fully interconnected two-dimensional ring network has been grown by low-temperature chemical vapor deposition prepared from nanochannel network template in porous anodic alumina (Stig et al. 2004 Chris et al. 

Liu, H., Feng, L., Zhai, J., Jiang, L., Zhu, D. (2004). Reversible wettability of a chemical vapor deposition prepared ZnO film between superhydrophobicity and superhydrophihcity. Langmuir, 20, 5659-5661. http //dx.doi.org/10.1021/la036280o. 

Germanium difluoride can be prepared by reduction (2,4) of GeF by metallic germanium, by reaction (1) of stoichiometric amounts of Ge and HF in a sealed vessel at 225°C, by Ge powder and HgF2 (5), and by GeS and PbF2 (6). Gep2 has been used in plasma chemical vapor deposition of amorphous film (see Plasma TECHNOLOGY Thin films) (7). 

Epitaxial crystal growth methods such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) have advanced to the point that active regions of essentially arbitrary thicknesses can be prepared (see Thin films, film deposition techniques). Most semiconductors used for lasers are cubic crystals where the lattice constant, the dimension of the cube, is equal to two atomic plane distances. When the thickness of this layer is reduced to dimensions on the order of 0.01 )J.m, between 20 and 30 atomic plane distances, quantum mechanics is needed for an accurate description of the confined carrier energies (11). Such layers are called quantum wells and the lasers containing such layers in their active regions are known as quantum well lasers (12). 

Chemical Vapor Deposition. In chemical vapor deposition (CVD), often referred to as vapor transport, the desired constituent(s) to be deposited are ia the form of a compound existing as a vapor at an appropriate temperature. This vapor decomposes with or without a reducing or oxidizing agent at the substrate— vapor interface for film growth. CVD has been used successfully for preparing garnet and ortho ferrite films (24,25). Laser-assisted CVD is also practiced. 

Alternative Thin-Film Fabrication Approaches. Thin films of electronic ceramic materials have also been prepared by sputtering, electron beam evaporation, laser ablation, chemical beam deposition, and chemical vapor deposition (CVD). In the sputtering process, targets may be metal... 

Dirubidium phthalocyanine (PcRb2) and dicesium phthalocyanine (PcCs2) can be prepared by chemical-vapor deposition of benzene-1,2,4,5-tctracarbonitrile and the metal chloride.135 In the solid phase, additional rubidium atoms are complexed between peripheral cyano groups. 

In spray pyrolysis, very fine droplets are sprayed onto a heated substrate. The limitations of this process are the same as for spin-on coating. The same is often the case for preparing solid electrolytes by chemical vapor deposition (CVD) processes, which in addition are more expensive, and the precursors are often very toxic. 

The growing interest in volatile silyl-metal complexes for chemical vapor deposition reactions should also be mentioned. This technique is extremely useful for the preparation of silicide films in microelectronic devices. Further examples of applications of silicon-metal compounds are given in the appropriate sections. 

Nakamura, K., Preparation and Properties of Boron Nitride Films by Metal Organic Chemical Vapor Deposition, /. Electochem. Soc., 133-6 120-1123 (1986)... 

Souletie, P., and Wessels, B. W., Growth Kinetics of ZnO Prepared by Organometallic Chemical Vapor Deposition, J. Mater. 

Yoon, S., and Kim, H., Preparation and Deposition Mechanism ofFerroelectricPbTi03 Thin Films by Chemical Vapor Deposition, J. Electrochem. Soc., 135(12) 3137-3140 (1988)... 

Ohtake, N., and Yashikawa, M., Diamond Film Preparation by Arc Discharge Plasma Jet Chemical Vapor Deposition in the Methane Atmosphere, / Electrochem. Soc., 137(2) 717-722(1990)... 

Several patents dealing with the use of volatile metal amidinate complexes in MOCVD or ALD processes have appeared in the literature.The use of volatile amidinato complexes of Al, Ga, and In in the chemical vapor deposition of the respective nitrides has been reported. For example, [PhC(NPh)2]2GaMe was prepared in 68% yield from GaMes and N,N -diphenylbenzamidine in toluene. Various samples of this and related complexes could be heated to 600 °C in N2 to give GaN. A series of homoleptic metal amidinates of the general type [MIRCfNROilnl (R = Me, Bu R = Pr, BuO has been prepared for the transition metals Ti, V, Mn, Fe, Co, Ni, Cu, Ag, and La. The types of products are summarized in Scheme 226. The new compounds were found to have properties well-suited for use as precursors for atomic layer deposition (ALD) of thin films. 

DEC coating was first prepared by Aisenberg and Chabot using ion beam deposition in 1971 [2]. At present, PVD, such as ion beam deposition, sputtering deposition, cathodic vacuum arc deposition, pulsed laser deposition, and CVD, like plasma enhanced chemical vapor deposition are the most popular methods to be selected to fabricate DEC coatings. 

Up to the present, a number of conventional film preparation methods like PVD, CVD, electro-chemical deposition, etc., have been reported to be used in synthesis of CNx films. Muhl et al. [57] reviewed the works performed worldwide, before the year 1998, on the methods and results of preparing carbon nitride hlms. They divided the preparation techniques into several sections including atmospheric-pressure chemical processes, ion-beam deposition, laser techniques, chemical vapor deposition, and reactive sputtering [57]. The methods used in succeeding research work basically did not... 

These processes are very rapid and allow the preparation of inorganic supports in one step. This technique allows large-scale manufacturing of supports such as titania, fumed silica, and aluminas. Sometimes the properties of the material differ from the conventional preparation routes and make this approach unique. Multicomponent systems can be also prepared, either by multimetallic solutions or by using a two-nozzle system fed with monometallic solutions [22]. The as-prepared powder can be directly deposited onto substrates, and the process is termed combustion chemical vapor deposition [23]. 

---