Chemical vapor deposition organometallic

Souletie, P., and Wessels, B. W., Growth Kinetics of ZnO Prepared by Organometallic Chemical Vapor Deposition, J. Mater. 

Growth of Compound Semiconductors and Superlattices by Organometallic Chemical Vapor Deposition... 

Nomura, R. Sekl, Y. Matsuda, H. 1992. Preparation of copper indium sulfide (CuIn5S8) thin films by single-source organometallic chemical vapor deposition. Thin Solid Films 209 145-147. 

Berry, A., Gaskill, D., Holm, R., Cukauskas, E., Kaplan, K. and Henry, R., Formation of High Temperature Superconducting Films by Organometallic Chemical Vapor Deposition, Appl. Phys. Lett. 52 1743 (1988). 

Wohlfart P, WeiB J, Kashammer J et al (1999) Selective ultrathin gold deposition by organometallic chemical vapor deposition onto organic self-assembled monolayers (SAMs). Thin Solid Films 340 274-279... 

Organometallic chemical vapor deposition the same as MOCVD... 

J.C. Hierso, C. Satto, F. Feurer, and P. Kalck, Organometallic Chemical Vapor Deposition of Palladium Under Very Mild Conditions of Temperature in the Presence of Low Reactive Gas Partial Pressure, Chemical Materials, Vol.8,1996, pp.2481-2485. 

H. Thridandam, Low Temperature Organometallic Chemical Vapor Deposition of Transition Metals, Proceeding of Material Research Society Symposium, Vol.131, 1989, pp.395-400. 

A. Zinn, B. Niemer, andH.D. Kaesz, Reaction Pathways in Organometallic Chemical Vapor Deposition (OMCVD), Advanced Materials, Vol.4,1992, pp.375-378. 

Z. Xue, H. Thridandam, H.D. Kaesz, and R.F. Hicks, Organometallic Chemical Vapor Deposition of Platinum. Reaction Kinetics and Vapor Pressures of Precursors, Chemical Materials, Vol.4, 1992, pp.l62-166. 

Y.G. Kim, D. Byun, C. Hutchings, P.A. Dowben, H. Hejase, and K. Shrdder, Eabricating Magnetic Co-Ni-C Thin Eilm Alloys by Organometallic Chemical Vapor Deposition, Journal of Applied Physics, Vol.70, 1991, pp.6062-6064. 

Ennaoui A., Fiechter S., Tributsch H., Giersig M., Vogel R. and Weller H. (1992), Photoelectrochemical energy conversion obtained with ultrathin organometallic-chemical vapor deposition layer of FeSi (pyrite) on TiOi , J. Electrochem. Soc. 139, 2514-2518. 

Controlled synthesis of supported ruthenium catalysts for CO oxidation by organometallic chemical vapor deposition... 

Abstract Supported ruthenium catalysts have been synthesized by organometallic chemical vapor deposition using using Ru3(CO)i2 as ruthenium precursor. The results show that the ruthenium particles are distributed uniformly on the supports in the fluidized-bed conditions. Under the static conditions, various differently loaded ruthenium catalysts were prepared by controlling the initial amount of the ruthenium precursor under high-vacuum conditions. The size of the ruthenium particles can be controlled by changing the support. The as-prepared catalysts were highly catalytically active and stable for the CO oxidation reaction. 

---