Solar semiconductor

Professor at the Technion Israel Institute of Science, in 2003 became Chair of the Department of Chemistry at the University of Massachusetts Boston, and in 2007 a Program Director at the NSF. He has contributed 270 peer reviewed papers and patents ranging from novel efficient solar semiconductor/electrochemical processes, to unusual batteries, to elucidation of complex equilibria and quantum electron correlation theory. 

Selenium exhibits both photovoltaic action, where light is converted directly into electricity, and photoconductive action, where the electrical resistance decreases with increased illumination. These properties make selenium useful in the production of photocells and exposure meters for photographic use, as well as solar cells. Selenium is also able to convert a.c. electricity to d.c., and is extensively used in rectifiers. Below its melting point selenium is a p-type semiconductor and is finding many uses in electronic and solid-state applications. 

It is used as a fluorinating reagent in semiconductor doping, to synthesi2e some hexafluoroarsenate compounds, and in the manufacture of graphite intercalated compounds (10) (see Semiconductors). AsF has been used to achieve >8% total area simulated air-mass 1 power conversion efficiencies in Si p-n junction solar cells (11) (see Solarenergy). It is commercially produced, but usage is estimated to be less than 100 kg/yr. 

Mercury Telluride. Compounds of mercury with tellurium have gained importance as semiconductors with appHcations in infrared detection (9) and solar cells (10). The ratio of the components is varied, and other elements such as cadmium, zinc, and indium are added to modify the electronic characteristics. 

Four different types of junctions can be used to separate the charge carriers in solar cebs (/) a homojunction joins semiconductor materials of the same substance, eg, the homojunction of a p—n sibcon solar ceb separates two oppositely doped layers of sibcon 2) a heterojunction is formed between two dissimbar semiconductor substances, eg, copper sulfide, Cu S, and cadmium sulfide, CdS, in Cu S—CdS solar cebs (J) a Schottky junction is formed when a metal and semiconductor material are joined and (4) in a metal—insulator—semiconductor junction (MIS), a thin insulator layer, generaby less than 0.003-p.m thick, is sandwiched between a metal and semiconductor material. 

There ate three basic technology options for making solar cells with do2ens of variations on each. These approaches ate conveniently grouped as follows thick (- 300 fiTo) crystalline materials, concentrator cells, and thin (- 1 fiva) semiconductor films. 

Because of the high functional values that polyimides can provide, a small-scale custom synthesis by users or toU producers is often economically viable despite high cost, especially for aerospace and microelectronic appHcations. For the majority of iudustrial appHcations, the yellow color generally associated with polyimides is quite acceptable. However, transparency or low absorbance is an essential requirement iu some appHcations such as multilayer thermal iusulation blankets for satellites and protective coatings for solar cells and other space components (93). For iutedayer dielectric appHcations iu semiconductor devices, polyimides having low and controlled thermal expansion coefficients are required to match those of substrate materials such as metals, ceramics, and semiconductors usediu those devices (94). 

In most cases, CVD reactions are activated thermally, but in some cases, notably in exothermic chemical transport reactions, the substrate temperature is held below that of the feed material to obtain deposition. Other means of activation are available (7), eg, deposition at lower substrate temperatures is obtained by electric-discharge plasma activation. In some cases, unique materials are produced by plasma-assisted CVD (PACVD), such as amorphous siHcon from silane where 10—35 mol % hydrogen remains bonded in the soHd deposit. Except for the problem of large amounts of energy consumption in its formation, this material is of interest for thin-film solar cells. Passivating films of Si02 or Si02 Si N deposited by PACVD are of interest in the semiconductor industry (see Semiconductors). 

Electrically Functional. Refractory coatings are used in semiconductor devices, capacitors, resistors, magnetic tape, disk memories, superconductors, solar ceUs, and diffusion barriers to impurity contamination from the substrate to the active layer. 

Since 1970 the subject of amoiphous semiconductors, in particular silicon, has progressed from obscurity to product commercialisation such as flat-panel hquid crystal displays, linear sensor arrays for facsimile machines, inexpensive solar panels, electrophotography, etc. Many other appHcations are at the developmental stage such as nuclear particle detectors, medical imaging, spatial light modulators for optical computing, and switches in neural networks (1,2). 

W. Ingle, R. Rosier, S. Thompson, and R. Chaney, Semiconductor-Grade Solar Silicon Purification Project NASA-CR-158868, Rept.-2257/12, Cape Canavral, Fla, 1979,... 

Electronic and Optoelectronic Applications of TeUurides. Most metal teUurides are semiconductors with a large range of energy gaps and can be used in a variety of electrical and optoelectronic devices. AUoys of the form HgCdTe and PbSnTe have been used as infrared detectors and CdTe has been employed as a gamma ray detector and is also a promising candidate material for a thin-fUm solar ceU. 

Semiconductor and Solar Cells. High purity (up to 99.9%) antimony has a limited but important appHcation in the manufacture of semiconductor devices (see Semiconductors). It may be obtained by reduction of a chemically purified antimony compound with a high purity gaseous or soHd reductant, or by thermal decomposition of stibine. The reduced metal may be further purified by pyrometaHurgical and zone melting techniques. 

In addition, the copper industry s market development activities have resulted in appHcations such as clad ship hulls, sheathing for offshore platforms, automotive electrical systems including electric vehicles, improved automobde radiators, solar energy, fire sprinkler systems, parts for fusion reactors, semiconductor lead frames, shape memory alloys, and superconducting ceramics (qv) containing copper oxides. 

Fig. 1. The energy levels in a semiconductor. Shown are the valence and conduction bands and the forbidden gap in between where represents an occupied level, ie, electrons are present O, an unoccupied level and -3- an energy level arising from a chemical defect D and occurring within the forbidden gap. The electrons in each band are somewhat independent, (a) A cold semiconductor in pitch darkness where the valence band levels are filled and conduction band levels are empty, (b) The same semiconductor exposed to intense light or some other form of excitation showing the quasi-Fermi level for each band. The energy levels are occupied up to the available voltage for that band. There is a population inversion between conduction and valence bands which can lead to optical gain and possible lasing. Conversely, the chemical potential difference between the quasi-Fermi levels can be connected as the output voltage of a solar cell. Fquilihrium is reestabUshed by stepwise recombination at the defect levels D within the forbidden gap.

These two devices are the inverse of one another the semiconductor laser converts electricity into light the solar cell converts light into electricity. 

A photovoltaic cell (often called a solar cell) consists of layers of semiconductor materials with different electronic properties. In most of today s solar cells the semiconductor is silicon, an abundant element in the earth s crust. By doping (i.e., chemically introducing impurity elements) most of the silicon with boron to give it a positive or p-type electrical character, and doping a thin layer on the front of the cell with phosphorus to give it a negative or n-type character, a transition region between the two types... 

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