Semiconductors chemical vapor deposition

Rhenium hexafluoride is used for the deposition of rhenium metal films for electronic, semiconductor, laser parts (6—8), and in chemical vapor deposition (CVD) processes which involve the reduction of ReF by hydrogen at elevated (550—750°C) temperatures and reduced (<101.3 kPa (1 atm)) pressures (9,10). 

Deposition of Thin Films. Laser photochemical deposition has been extensively studied, especially with respect to fabrication of microelectronic stmctures (see Integrated circuits). This procedure could be used in integrated circuit fabrication for the direct generation of patterns. Laser-aided chemical vapor deposition, which can be used to deposit layers of semiconductors, metals, and insulators, could define the circuit features. The deposits can have dimensions in the micrometer regime and they can be produced in specific patterns. Laser chemical vapor deposition can use either of two approaches. 

Epitaxial crystal growth methods such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) have advanced to the point that active regions of essentially arbitrary thicknesses can be prepared (see Thin films, film deposition techniques). Most semiconductors used for lasers are cubic crystals where the lattice constant, the dimension of the cube, is equal to two atomic plane distances. When the thickness of this layer is reduced to dimensions on the order of 0.01 )J.m, between 20 and 30 atomic plane distances, quantum mechanics is needed for an accurate description of the confined carrier energies (11). Such layers are called quantum wells and the lasers containing such layers in their active regions are known as quantum well lasers (12). 

This article focuses primarily on the properties of the most extensively studied III—V and II—VI compound semiconductors and is presented in five sections (/) a brief summary of the physical (mechanical and electrical) properties of the 2incblende cubic semiconductors (2) a description of the metal organic chemical vapor deposition (MOCVD) process. MOCVD is the preferred technology for the commercial growth of most heteroepitaxial semiconductor material (J) the physics and (4) apphcations of electronic and photonic devices and (5) the fabrication process technology in use to create both electronic and photonic devices and circuits. 

Dielectric Deposition Systems. The most common techniques used for dielectric deposition include chemical vapor deposition (CVD), sputtering, and spin-on films. In a CVD system thermal or plasma energy is used to decompose source molecules on the semiconductor surface (189). In plasma-enhanced CVD (PECVD), typical source gases include silane, SiH, and nitrous oxide, N2O, for deposition of siUcon nitride. The most common CVD films used are siUcon dioxide, siUcon nitride, and siUcon oxynitrides. 

Tertiary stibines have been widely employed as ligands in a variety of transition metal complexes (99), and they appear to have numerous uses in synthetic organic chemistry (66), eg, for the olefination of carbonyl compounds (100). They have also been used for the formation of semiconductors by the metal—organic chemical vapor deposition process (101), as catalysts or cocatalysts for a number of polymerization reactions (102), as ingredients of light-sensitive substances (103), and for many other industrial purposes. 

Dimethylcadmium has found use as a volatile source of Cd for metal organic chemical vapor deposition (MOCVD) production of cadmium-containing semiconductor thin films (qv) such as CdS, Cdi 2 Hg -Te, or Cdi 2 Mn -Te, as multiple quantum weU species (32). Semiconductor-grade material seUs for... 

Purification of Silicon. Chemical purity plays an equally important role in the bulk of materials as on the surface. To approach the goal of absolute stmctural perfection and chemical purity, semiconductor Si is purified by the distillation of trichlorosilane [10025-78-2] SiHCl, followed by chemical vapor deposition (CVD) of hulk polycrystalline siUcon. 

CHEMISTRY OF SUPERCONDUCTOR MATERIALS edited by Terrell A. Vanderah CONTACTS TO SEMICONDUCTORS edited by Leonard J. Brillson DIAMOND CHEMICAL VAPOR DEPOSITION by Huimin Liu and David S. Dandy DIAMOND FILMS AND COATINGS edited by Robert F. Davis... 

Chemical vapor deposition (CVD) has grown very rapidly in the last twenty years and applications of this fabrication process are now key elements in many industrial products, such as semiconductors, optoelectronics, optics, cutting tools, refractory fibers, filters and many others. CVD is no longer a laboratory curiosity but a maj or technology on par with other maj or technological disciplines such as electrodeposition, powder metallurgy, or conventional ceramic processing. 

Chemical vapor deposition (C VD) is a versatile process suitable for the manufacturing of coatings, powders, fibers, and monolithic components. With CVD, it is possible to produce most metals, many nonmetallic elements such as carbon and silicon as well as a large number of compounds including carbides, nitrides, oxides, intermetallics, and many others. This technology is now an essential factor in the manufacture of semiconductors and other electronic components, in the coating of tools, bearings, and other wear-resistant parts and in many optical, optoelectronic and corrosion applications. The market for CVD products in the U.S. and abroad is expected to reach several billions dollars by the end of the century. 

Handbook of Chemical Vapor Deposition 8.2 Advantages of Semiconductor Diamond... 

Mg(THF), when the stoichiometry was 1 2. Monomeric and dimeric amidinate complexes of magnesium have been studied in detail with respect to potential applications of these compounds in the chemical vapor deposition of magnesium-doped Group 13 compound semiconductor films. The reactions and products are summarized in Scheme 16. ... 

This procedure, with minor variations, is repeated dozens of times in the manufacture of a semiconductor chip. The chemical treatment can be carried out using reagents in a liquid phase, but gas-phase treatment by a process known as chemical vapor deposition (CVD) has become more important as individual features in the integrated circuit become smaller. 

Growth of Compound Semiconductors and Superlattices by Organometallic Chemical Vapor Deposition... 

The synthesis of MNCGs can be obtained by sol-gel, sputtering, chemical vapor-deposition techniques. Ion implantation of metal or semiconductor ions into glass has been explored since the last decade as a useful technique to produce nanocomposite materials in which nanometer sized metal or semiconductor particles are embedded in dielectric matrices [1,2,4,23-29]. Furthermore, ion implantation has been used as the first step of combined methodologies that involve other treatments such as thermal annealing in controlled atmosphere, laser, or ion irradiation [30-32]. 

---