Semiconductor thin-film materials

Industrial Applications Dye laser electrochromic display device light-emitting diode semiconductors thin film materials laundry detergent paper textiles ... 

StiU another method used to produce PV cells is provided by thin-fiLm technologies. Thin films ate made by depositing semiconductor materials on a sohd substrate such as glass or metal sheet. Among the wide variety of thin-fiLm materials under development ate amorphous siUcon, polycrystaUine sUicon, copper indium diselenide, and cadmium teUuride. Additionally, development of multijunction thin-film PV cells is being explored. These cells use multiple layers of thin-film sUicon alloys or other semiconductors tailored to respond to specific portions of the light spectmm. 

Dimethylcadmium has found use as a volatile source of Cd for metal organic chemical vapor deposition (MOCVD) production of cadmium-containing semiconductor thin films (qv) such as CdS, Cdi 2 Hg -Te, or Cdi 2 Mn -Te, as multiple quantum weU species (32). Semiconductor-grade material seUs for... 

Three common uses of RBS analysis exist quantitative depth profiling, areal concentration measurements (atoms/cm ), and crystal quality and impurity lattice site analysis. Its primary application is quantitative depth profiling of semiconductor thin films and multilayered structures. It is also used to measure contaminants and to study crystal structures, also primarily in semiconductor materials. Other applications include depth profilii of polymers, high-T superconductors, optical coatings, and catalyst particles. ... 

Ceramic and semiconductor thin films have been prepared by a number of methods including chemical vapor deposition (CVD), spray-coating, and sol-gel techniques. In the present work, the sol-gel method was chosen to prepare uniform, thin films of titanium oxides on palladium Titanium oxide was chosen because of its versatility as a support material and also because the sol-gel synthesis of titania films has been clearly described by Takahashi and co-workers (22). The procedure utilized herein follows the work of Takahashi, but is modified to take advantage of the hydrogen permeability of the palladium substrate. Our objective was to develop a reliable procedure for the fabrication of thin titania films on palladium, and then to evaluate the performance of the resulting metalloceramic membranes for hydrogen transport and ethylene hydrogenation for comparison to the pure palladium membrane results. 

Atomic layer epitaxy (electrochemical) — Electrochemical atomic layer epitaxy (ECALE) is a self-limiting process for the formation of structurally well-ordered thin film materials. It was introduced by Stickney and coworkers [i] for the layer by layer growth of compound semiconductors (CdTe, etc.). Thin layers of compound semiconductors can be formed by alternating - underpotential deposition steps of the individual elements. The total number of steps determines the final thickness of the layer. Compared to flux-limited techniques... 

The surface of a semiconductor generally has different properties from the bulk. The surface of a thin film material such as a-Si H is particularly significant because the bulk is never far away. Interest in multilayer structures which are described in Section 9.4 and the development of thin film field effect transistors, which are described in Section 10.2, has focussed attention on surface and interface properties. 

Organic thin film transistors (OTFTs) are field effect devices with organic or polymer semiconductor thin film as channel materials. They are currently one of the most fascinating technology for chemical and biological sensing both as discrete elements [3] or implemented in plastic circuits. 

Beryllium has few applications in thin-film materials, owing to toxicity issues and the generally high air sensitivity of its compounds. Beryllium is a desirable ablator material in fusion research, and beryllium ion is an excellent p-type dopant in compound semiconductors such as InP and (ln,Ga)As. There are limited precursors available for the CVD growth of... 

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