Semiconducting device

Polyaniline (PANI) can be formed by electrochemical oxidation of aniline in aqueous acid, or by polymerization of aniline using an aqueous solution of ammonium thiosulfate and hydrochloric acid. This polymer is finding increasing use as a "transparent electrode" in semiconducting devices. To improve processibiHty, a large number of substituted polyanilines have been prepared. The sulfonated form of PANI is water soluble, and can be prepared by treatment of PANI with fuming sulfuric acid (31). A variety of other soluble substituted AJ-alkylsulfonic acid self-doped derivatives have been synthesized that possess moderate conductivity and allow facile preparation of spincoated thin films (32). 

Electronic. The largest use of helium-group gases in the electronics industry is for the manufacture of semiconducting devices. The starting... 

While toner particles were used to exemplify a specific technology and lay the groundwork for discussing the scientific issues surrounding particle adhesion, the topic of particle adhesion extends far beyond copiers. For example, let us consider the fabrication of semiconducting devices. 

Semiconducting devices, switches and miniaturised v.h.f. circuits are all particularly sensitive to the slightest reaction on critical surfaces, and in devices calling for the highest levels of reliability even the most inert of the phenolic, epoxide and silicone resins are not considered to be fully acceptablecorrosion of electronic assemblies may often be enhanced by migration of ions to sensitive areas under applied potentials, and by local heating effects associated with current flows. 

Chason, M. Brazis, P. W. Zhang, J. Kalyanasundaram, K. Gamota, D. R. 2005. Printed organic semiconducting devices. Proc. IEEE 93 1348-1356. 

The compound is prepared by vapor phase reaction of gallium suboxide, Ga20 and phosphorus. It is produced in polycrystaUine form or as single crystals or whiskers in high purity grade for use in semiconducting devices. 

The measurement of the growth and decay of fluorescence requires essentially two items (a) modulated excitation source and (b) a detector. The modulation of an excitation source may be accomplished in various ways. These range from simple mechanical choppers to highly sophisticated electronic pulsers. Detectors may be phototubes or semiconducting devices, or even the human eye. The detector itself, in some instances, may be modulated. Of course, the detector chosen must depend upon the spectral range to be studied and the response time desired. 

Polyenes and polydiacetylenes 216 Organic superconductors 225 Polymeric semiconducting devices 226... 

A thermistor is a semiconducting device which has a negative coefficient of resistance with temperature, e.g. its resistance decreases with increasing temperature. The principles behind its operation follows. 

The term SCR refers both to a p — n — p — n semiconducting device,6 often referred to as a thyristor, and more generically, to a module containing the aforementioned device as a component, as well as other circuitry and convection cooling fins (Figure 2.11). 

Memory devices (electrical, optical) Molecular electronics Nonlinear optics Packaging materials pH modulator Polymer/solid electrolytes Semiconducting devices p-n junctions, pho-tovoltaics, Schottky diodes, light-emitting diodes, transistors, etc. 

Helium is used as an inert atmosphere for welding and for growing high-purity silicon crystals for semiconducting devices. 

New silicon oxide ceramic coatings based on hydrogensilsesquioxane are now finding applications as interlayer dielectrics in new generation of multilayer semiconducting devices. These materials have excellent gap filling characteristics, low dielectric constants and are relatively simple to apply [23],... 

Another possible application for high temperature superconductors is as interconnects in computer systems with semiconducting devices (31). These could be called hybrid systems, since they involve both superconductors and semiconductors. In particular CMOS devices are well-known to have enhanced performance at 77 K and are thus potentially compatible with YBaCuO. 

Layers of TiN, ZrN, HfN or TaN are applied as diffusion barriers in semiconducting devices. The barrier layer (wlOOnm thick) is fabricated between the semiconducting material (e.g. GaAs or Si) and the protective metallic (e.g. Au or Ni) coating, and prevents diffusion of metal atoms into the GaAs or Si device. 

We devote a significant part of this chapter to the method of chemical vapour deposition, the development of which has been closely tied to the need to deposit thin films of a range of metals and inorganic materials for use in semiconducting devices, ceramic coatings and electrochromic materials. Table 27.3 lists some applications of selected thin film materials. Part of the challenge of the successful production of thin films is to find suitable molecular precursors, and there is much research interest in this area. 

GaAs Semiconducting devices electrooptics (includes solar cells)... 

Si3N4 Diffusion barriers and inert coatings in semiconducting devices... 

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