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Nonvolatile memory devices

Recently, efforts have been devoted to the fabrication and characterization of PbZri- Ti c03 family thin films for their potential applications in nonvolatile memory devices (See Ref. 17, for example). Partly because of the convenient stoichiometry control during processing, it was found that chemical methods, such as sol-gel and metal organic decomposition (MOD), are superior to physical means in many aspects. To appreciate better the science and technology of ferroelectric thin-film fabrication, it is important to give a brief account of the past efforts and the present status and, it is hoped, shed some light on the future. [Pg.481]

Wei, D., Baral, J. K., Osterbacka, R., and Ivaska, A. (2008). Electrochemical fabrication of a nonvolatile memory device based on polyaniline and gold particles./ Mater. Chem., 18, pp. 1853-1857. [Pg.136]

Ferroelectric materials have numerous microelectronics applications, including capacitors (7,2), nonvolatile memory devices (2-4 electrooptic devices 1,4) and many others (5). The ferroelectrics described in this paper are Pb(ZrxTii x)03 (PZT), BaTi03, and YMn03. Here we investigate the use of a photochemical method for the direct deposition of these complex materials. [Pg.53]

Keywords Nanocomposites, polymer nanocomposites, plasmonics, ZnO-based nanocomposite films, nanosized fillers, nanocomposite solar cells, nonvolatile memory devices, magnetic fiuorescent nanocomposites... [Pg.446]

Figurel2.1 Schematic representation of a nonvolatile memory device. Figurel2.1 Schematic representation of a nonvolatile memory device.
Fabrication of Nonvolatile Memory Devices Utilizing Graphene Materials Embedded in a Polymer Matrix... [Pg.451]

Pol mier devices such as sensors, organic field effect transmitters, printed circuit boards, electrochromic devices, nonvolatile memory devices, or photovoltaic devices can be fabricated (22). [Pg.218]

Heremans, R, Gelinck, G. H., Muller, R. et al. 2011 Polymer and organic nonvolatile memory devices. [Pg.236]

Dong Min Kim earned his BE degree in 2005 and PhD degjxe in 2011 from POSTECH under the supervision of professor M. Ree. Dr. Kim is currently working in PAL as a postdoctoral feQow. He has worked on the structures and properties of novel functional polymers for biomedical sensors and electrically volatile and nonvolatile memory devices. Synchrotron XR and GIXS are the main tools in his researches. [Pg.462]


See other pages where Nonvolatile memory devices is mentioned: [Pg.206]    [Pg.163]    [Pg.151]    [Pg.588]    [Pg.34]    [Pg.474]    [Pg.34]    [Pg.124]    [Pg.4]    [Pg.215]    [Pg.250]    [Pg.1362]    [Pg.1362]    [Pg.445]    [Pg.447]    [Pg.449]    [Pg.451]    [Pg.452]    [Pg.333]    [Pg.333]    [Pg.242]    [Pg.107]    [Pg.533]    [Pg.347]    [Pg.351]    [Pg.151]    [Pg.185]   
See also in sourсe #XX -- [ Pg.447 , Pg.448 , Pg.449 , Pg.450 ]




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