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Storage capacitor

In storage capacitors it is important that we keep the dielectric constant to a minimum. This is not just a question of selecting the most appropriate polymer we must also ensure that contaminants that could raise the dielectric constant are kept to a minimum. Polymer manufacturers sell special grades of polypropylene (which is invariably the polymer of choice) that they describe as "ultraclean . These resins are made with catalysts that are extremely active and thus leave very little residue in the polymer. Such resins typically contain little or no anti-oxidant and are extruded under conditions and using equipment that are designed to minimize oxidation. [Pg.185]

Many LCDs are based on active-matrix addressing, in which an active device circuit containing one or more TFTs is connected to each pixel. The TFT circuit at each pixel effectively acts as an individual electrical switch that provides the means to store display information on a storage capacitor for the entire frame time, such that the pixel can remain emitting during this entire time rather than for a small fraction of time, as is the case in passive addressing. [Pg.548]

A voltage-driven 3-a-Si H TFTs pixel electrode circuit was reported by Kim and Kanicki in 2002 [17] and is shown in Figure 9.3a. The pixel electrode circuit has five components Cst, a storage capacitor Tl, a switching TFT T2, an active resistor T3, a constant current driver TFT and an organic PLED. [Pg.589]

Polyaniline has been formed in the pores of Cu- or Fe-exchanged MCM-41 by adsorption of aniline vapour and subsequent oxidative polymerization (Figure 7.23), and these molecular wires demonstrate significant electronic conduction, although less than that of bulk polyaniline. Pyrolysis of polyacrylonitrile in the pores produces a graphitelike carbon chain, which exhibits microwave conductivity ten times that of bulk carbonized polyacrylonitrile. Such materials have potential for use in information processing as storage capacitors. [Pg.334]

Energy Considerations and Spark Characteristics. Many effects listed under items 1 to 7 play. important roles in spark initiation because they affect the amt and rate of energy transfer from the storage capacitor to the spark gap. The energy delivery.can be detd in part by observations made on the... [Pg.693]

Table 7 gives an overview of various types of nonbattery storage capacitors and the modes of energy storage. It is also... [Pg.68]

A field shielded pixel structure is used. The cross-section of the active-matrix stack is shown in Fig. 14.6. The first four layers, defining the TFT, are identical with the stack presented in Section 14.2. The rows of the display are processed on the first metal level whereas the columns are processed on the second metal level. In the field-shielded pixel design, the pixel electrode is defined in a third metal level of gold, resulting in a six-mask process. The pixel pad overlaps the storage capacitor, TFT, and column lines with a 6 pm thick polyvinylphenol layer acting as inter-layer dielectric. The optical aperture thereby increases to over 95%. The TFT channel length (L) and width (W) are 5 pm and 140 pm, respectively. [Pg.350]

Fig. 14.7. Equivalent circuit of one pixel. The source, drain, and gate of the TFTs are indicated by S, D, and C, respectively. The storage capacitor is indicated by Cst, the pixel capacitor by CEmk> arid the parasitic gate-drain capacitance by Cgc. ... Fig. 14.7. Equivalent circuit of one pixel. The source, drain, and gate of the TFTs are indicated by S, D, and C, respectively. The storage capacitor is indicated by Cst, the pixel capacitor by CEmk> arid the parasitic gate-drain capacitance by Cgc. ...
Because the select TFT is used only for (dis)charging the storage capacitor (the gate capacitor of the drive TFT is much smaller than the storage capacitor), we can use a small device geometry, W = 20 pm, L = 20 pm. This transistor is basically working in the linear region, and the on-resistance of the select TFT can be calculated by use of Eq. (2) ... [Pg.371]


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See also in sourсe #XX -- [ Pg.94 , Pg.286 , Pg.350 , Pg.368 ]




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