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Metal line

Another important use of dielectrics is as intermetal dielectrics (IMDs), where the dielectrics insulate metal lines from each other. The dielectric material must fill small gaps with high aspect ratios (depth to width) while maintaining all other dielectric properties. It is essential that the IMDs are void-free at submicrometer dimensions for both performance and rehabiUty. [Pg.348]

Dmms comprise metal, lined metal or plastic containers with capacity up to 60 gallons (227 L) and are the largest containers considered in the following sections. Metal and plastic-lined metal drums can have either fixed or removable heads. It should always be ensured that dmms are sealed prior to... [Pg.150]

Most applications of LIMS are in failure analysis. A typical microanalytical failure analysis problem, for example, may involve determinating the cause of corrosion in a metallization line of an integrated circuit. One can achieve this by performing an elemental survey analysis of the corroded region. Since it is not always known which elements are normal constituents of the material in question and which are truly contaminants, the vast majority of these analyses are performed by comparing the elemental make-up of the defective region to that of a control region. The com-... [Pg.590]

Originally developed for tyre cords, Kevlar-type materials have also become widely used in composites. Uses include filament-wound rocket motors and pressure vessels, metal-lined Kevlar-overwrapped vessels in the space shuttle, boat and kayak hulls, Kevlar-epoxy helmets for the US military, and as one of the reinforcements in composite lorry cabs. [Pg.515]

Metallic Linings for Mild Environments Zinc coatings applied... [Pg.12]

Insensitive to impact, it decomposes, sometimes explosively, above its m.p. [1], particularly if heated rapidly [2], Although used in aqueous solutions as a preservative in pharmaceutical preparations, application of freeze-drying techniques to such solutions has led to problems arising from volatilisation of traces of hydrazoic acid from non-neutral solutions, condensation in metal lines, traps or filters, and formation of heavy metal azides in contact with lead, copper or zinc components in the drying plant [3,4],... [Pg.1802]

The abundance analyses for metal lines and molecular bands of CH and C2 demonstrates that (1) our sample covers the metallicity range from [Fe/H]= —3.5 to —1.7, and (2) 39 objects have [C/Fe]> +0.5. Here we regard these 39 stars as carbon-enhanced, metal-poor (CEMP) stars. [Pg.124]

Fig. 1. Heavy over light s-elements ratio versus metallicity. Lines are theoretical predictions for a 1.5M AGB stars with C/0=1.1 and three different choices for the neutron exposure rate (see Busso et al., 2001, ApJ, 557, 802). Black dots are for galactic carbon stars analyzed in Abia et al. (2002, ApJ 578, 817). Fig. 1. Heavy over light s-elements ratio versus metallicity. Lines are theoretical predictions for a 1.5M AGB stars with C/0=1.1 and three different choices for the neutron exposure rate (see Busso et al., 2001, ApJ, 557, 802). Black dots are for galactic carbon stars analyzed in Abia et al. (2002, ApJ 578, 817).
Metallicity, from integrated strength of metal lines, mostly due to Fe I, giving essentially [Fe/H],... [Pg.77]

At lower column densities, one is looking at systems where only a small fraction of the hydrogen is neutral metal lines (e.g. C il-iv, Si Il-iv) are weak and quantitative abundance estimates require an understanding of the ionizing radiation field, which may involve uncertainties of a factor of 3 or more the O VI doublet at AA 1032,1037 A, an important diagnostic, suffers from obscuration by the Ly-a forest. Existing results show a correlation with column density, with < [O/H] > — 1.5 for JV(H I) > 1015 cm-2 and-----2.5 for 10145 < /V(H I) < 1015 cm-2, perhaps reflect-... [Pg.387]

The development of low-dielectric-constant materials as ILDs is crucial to achieve low power consumption, reduce signal delay, and minimize interconnect cross-talk for high-performance VLSI devices. In one of the multilevel interconnect process routes, metal lines (e.g., A1—Cu or Cu) are patterned through reactive ion etching, and then dielectric films are filled in the trenches formed between these lines. These trenches can have widths in the sub-0.5 pm range and aspect ratios greater than 3. Therefore, small gap-filling capability is also required for such dielectrics. [Pg.276]

This experiment uses a socket board available from Radio Shack (catalog number 276-175). The socket board has the layout shown in Figure 6.13, each black square representing a socket (or hole) with metal lining into which a wire can be inserted for electrical contact. The sockets in each set of five sockets in the top and bottom horizontal rows are connected internally, as indicated with the horizontal lines. The sockets in each set of five sockets A to E and F to J in each vertical column are also connected internally,... [Pg.167]

Figure 4.8 shows the relative temperature difference of the various sensors with respect to the sensor in the membrane center Ti, which acts as a reference. The values of T2 represent, e.g., the relative difference T2- Ti)IT. One would infuifively expert, that Ti shows the lowest temperature owing to the ring heater scheme, which would lead to a positive difference value for all ofher sensors. However, T2 shows a lower temperafure fhan Ti owing to the fact that T2 is in close proximity to the wide metal line of the heater. As a consequence of the large heat flux through the heater line to the bulk silicon, the measured temperature of T2 is lower. The deviation of T4 is close to 15% and that of close to 9%. [Pg.40]


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See also in sourсe #XX -- [ Pg.442 ]




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