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Gap fill

Dielectric Film Deposition. Dielectric films are found in all VLSI circuits to provide insulation between conducting layers, as diffusion and ion implantation (qv) masks, for diffusion from doped oxides, to cap doped films to prevent outdiffusion, and for passivating devices as a measure of protection against external contamination, moisture, and scratches. Properties that define the nature and function of dielectric films are the dielectric constant, the process temperature, and specific fabrication characteristics such as step coverage, gap-filling capabihties, density stress, contamination, thickness uniformity, deposition rate, and moisture resistance (2). Several processes are used to deposit dielectric films including atmospheric pressure CVD (APCVD), low pressure CVD (LPCVD), or plasma-enhanced CVD (PECVD) (see Plasma technology). [Pg.347]

MicrobaUoons have been used for gap filling, where the spheres dampen sound or vibration in the stmcture. In the medical area, microbaUoons have been evaluated as a skin replacement for bum victims and phantom tissue for radiation studies. An important appHcation is in nitroglycerin-based explosives, in which microbaUoons permit a controUed sequential detonation not possible with glass spheres. [Pg.308]

Solvent-borne adhesives. Although the NR polymer is inherently tacky, tack-ifying resins are generally added to improve bonding to polar surfaces. Because the solids content in these adhesives is lower than 35 wt%, they are not suitable for gap filling. The quick-grab (cements) adhesives are particular because they contain about 65 wt% rubber, and set within a few seconds under finger pressure. [Pg.648]

EP adhesives come as fabric- or glass-supported films, pastes, and viscous liquids [208,212]. They are often supplied in solvent. The pastes are most useful in situations where gap filling is required [208]. A wide variety of epoxies are available. Some of the producers are Bloomingdale, Shell (EponICI [formerly Hysol] (Hysol ), CIBA-Geigy (Araldite )i 3M (Scotch Weld ), and Amicom (Uniset ). There are many more. [Pg.932]

Fillers (calcium carbonate, calcium sulfate, aluminum oxide, bentonites, wood flour) increase the solid content of the dispersion. They are added up to 50%, based on PVAc. The purpose of the addition is the reduction of the penetration depth, provision of thixotropic behavior of the adhesive, gap filling properties and the reduction of the costs. Disadvantage can be the increase of the white point and a possible higher tool wear. [Pg.1078]

Here and below we assume e to be positive, which is sufficient in view of the symmetry of p(e) for the Hamiltonian Eq. (3.10). For g<2 the density of stales has a pseudogap (the Peierls gap filled with disorder-induced states). For g>2 the pseudogap disappears and the density of states becomes divergent at c=0. [Pg.49]

So, Tg/ increases monotonically with medium density, but in the beginning the increase corresponds to gap filling, and in the end to general narrowing of the spectrum. [Pg.215]

After synthesis, the RNA primers must be removed, gaps filled in, and the strands joined to give a linear, duplex DNA. New histones are added to the lagging strand (which is now a duplex) while the old histones remain with the leading strand. As the smoke slowly clears, we have a copy of the original DNA. [Pg.57]

Figure 2.5. SEM photograph of a silicon wafer cross section illustrating gap fill quality of a cured, spin-coated fluoromethylene resin (n = 6) over aluminum features having width and spacing. [Pg.37]

The development of low-dielectric-constant materials as ILDs is crucial to achieve low power consumption, reduce signal delay, and minimize interconnect cross-talk for high-performance VLSI devices. In one of the multilevel interconnect process routes, metal lines (e.g., A1—Cu or Cu) are patterned through reactive ion etching, and then dielectric films are filled in the trenches formed between these lines. These trenches can have widths in the sub-0.5 pm range and aspect ratios greater than 3. Therefore, small gap-filling capability is also required for such dielectrics. [Pg.276]

The Code-On is a capillary gap Stainer. The capillary gap is formed between two slides, each of which may bear specimens. The shdes of a pair are kept approx 150 tim apart by the clamping action of the slide holder, and by raised areas that exist on each slide at the label area and at each of the opposite corners at the end of the slide. The capillary gap, enclosed by the two slides, holds approx 150 tiL of reagent, assuming that the gap fills to a height of approx 1.5 in. from the bottom of the slide pair. [Pg.443]

DNA adducts most likely reflects increased DNA repair such as nucleotide excision repair and postreplication repair including translesion synthesis, gap filling, and template switching during replication (27,28). [Pg.49]

O. Murata, JlndExplSocJapan 17, 102-11 (1956) 8 CA 50, 17454(1956) (Deton by influence) 16) G.R. McVey St V.M. Boyle, "Sympathetic Detonation in Composition B Induced by Air Shock from Pentolite and from Composition B , BRL Rept 1048(1956) 16a) PATR 2510(1958), p Ger 52 (Four-cartridge test) 17) J.B. Cole, G.D. Edwards St T.K. Rice, USP 2832213(1958) (Booster-gap explosive sensitivity test claimed to give more reliable results than the "card and "three-legged table tests) 18) Cook (1958), 189-90 (Designation of "donor St "receptor and "shock-pass-heat-filter method) 194-97 (Deton by influence - testing by air-gap method and a brief discussion on testing thru gap filled with water, mud or solids some theoretical discussion on deton by influence) ... [Pg.400]

This kind of situation usually does not occur in coal mining practice, but in fact there have been instances when an explosive charge has been fired across gaps filled with methane inside the shothole. The conditions characteristic of the firing of explosive charges suspended in a methane-air mixture are then very similar to those met in practice. [Pg.415]

Gaps filled (left) or entire transposon replicated (right)... [Pg.989]

DNA polymerase III continues to synthesize DNA on the laggin strand until it is blocked by proximity to an RNA primer. When thi occurs, the RNA is excised and the gap filled by DNA polymerase I. [Pg.402]

Many of the discrepancies were detected and most of the gaps filled, by other published data. In several doubtful cases tests were repeated. These corrections are indicated by parentheses or question marks, as shown in the footnotes. The presence of unnumbered liquids in Table VIII is due to the fact that Jackson and Drury (211) tested these liquids only with the numbered liquids and not with each other. It was impossible to fill all of the resulting gaps without having these liquids available. [Pg.9]

Poll polA Prime removal and gap filling Initial leading strand synthesis on ColEl... [Pg.655]

Fig. 4. Details of DNA replication, (a) Primase binds to the DNA template strand (thin line) and (b) synthesizes a short RNA primer (dotted line) (c) DNA polymerase III now extends the RNA primer by synthesizing new DNA (thick line) (d) during synthesis of the lagging stand, adjacent Okazaki fragments are separated by the RNA primers (e) the RNA primers are now removed and the gaps filled with DNA by DNA polymerase I (f) generating adjacent DNA fragments that are then (g) joined by DNA ligase. Fig. 4. Details of DNA replication, (a) Primase binds to the DNA template strand (thin line) and (b) synthesizes a short RNA primer (dotted line) (c) DNA polymerase III now extends the RNA primer by synthesizing new DNA (thick line) (d) during synthesis of the lagging stand, adjacent Okazaki fragments are separated by the RNA primers (e) the RNA primers are now removed and the gaps filled with DNA by DNA polymerase I (f) generating adjacent DNA fragments that are then (g) joined by DNA ligase.

See other pages where Gap fill is mentioned: [Pg.433]    [Pg.326]    [Pg.410]    [Pg.678]    [Pg.784]    [Pg.1063]    [Pg.328]    [Pg.47]    [Pg.469]    [Pg.36]    [Pg.22]    [Pg.443]    [Pg.444]    [Pg.114]    [Pg.233]    [Pg.234]    [Pg.409]    [Pg.215]    [Pg.433]    [Pg.656]    [Pg.690]    [Pg.2295]    [Pg.111]    [Pg.492]    [Pg.173]    [Pg.160]   
See also in sourсe #XX -- [ Pg.21 ]

See also in sourсe #XX -- [ Pg.21 ]

See also in sourсe #XX -- [ Pg.21 ]




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