Direct current sputtering

Direct-current sputtering is not generally applicable for the preparation of thin-film solid electrolytes since these compounds are electronic insulators. The target surface would be charged with the same polarity as that of the ions in the plasma, and the sputtering plasma would rapidly break down. 

Physical vapor deposition methods (PVD) offer the possibility of preparing catalysts in which no foreign ions or molecules are introduced as is the case in the conventional "wet" impregnation methods. In evaporation methods however, the contact between metal and substrate produced by the deposition of metallic vapors is too weak to favor strong interactions and to enhance the catalytic activity and stability. By contrast, when a high-energy method like ion implantation is used, the metal is buried too deeply in the substrate and only a limited number of sites are available for the catalytic reactions. So far, direct-current sputtering has been the only PVD method whereby reasonable amounts of active catalysts could be prepared [1]. 

G. Este, W.D. Westwood, A quasi-direct-current sputtering technique for the deposition of dielectrics at enhanced rates, J. Vac. Sci. Tectmol. A6 (3) (1988) 1845. 

In addition to microwave plasma, direct current (dc) plasma [19], hot-filament [20], magnetron sputtering [21], and radiofrequency (rf) [22-24] plasmas were utilized for nanocrystalline diamond deposition. Amaratunga et al. [23, 24], using CH4/Ar rf plasma, reported that single-crystal diffraction patterns obtained from nanocrystalline diamond grains all show 111 twinning. 

Direct consumption sugar, 23 450-451 Direct contact heat exchangers, 13 268 Direct cooler evaporators, 21 537 Direct-coupled plasma (DCF), 25 370 Direct covalent carbon nanotube functionalization, 17 54-55 Direct current (dc) diode sputtering, 24 730-731. See also dc sensing current... 

Ishibashi S., Higuchi Y., Ola Y. and Nakamura K. Low resistivity indium tin oxide transparent conductive films. I. Effect of introducing H2O gas of H2 gas during direct current magnetron sputtering. J. Vac. Soc. Technol, 1989 AS 3-6. 

Can the anode magnetron be used in the precleaning process of the metallic substrate that is used as the cathode in the cathodic plasma polymerization In a more broad sense, can the surface of metal (cathode) be cleaned by argon direct current (DC) discharge sputtering ... 

Utilize direct current (DC) magnetron sputter-deposited multi-component catalyst layers. 

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