Saturation regime

It is seen that for a given (constant) gate voltage, the drain current first increases linearly with the drain voltage (linear regime), then gradually levels off to reach a saturation value (saturation regime). 

Eq. (14.51) can be substantially simplified if we assume that C, 2> C which is indeed the case when the semiconducting film is thinner than the insulating layer. The drain current in the linear and saturation regimes is then respectively given by... 

In case when such chemically active particles as atoms and radicals get adsorbed on oxides, the kinetics of the process is characterized by linear dependence over a substantially wide time interval [63]. The transition into the saturation regime in this case is provided by chemical... 

During the saturation regime, fluxes of reduced-species of Mn, as measured by the decrease in its content in the ERO fraction (mg kg 1 sec-1), were somewhat faster (by a factor of 1.43/0.828 = 1.7) in the sandy soil than in the loessial soil. The reduced Mn species was split in both of the soils between the exchangeable and the carbonate fractions. The rate of increase of Mn in the carbonate fraction was somewhat faster (6.9/4.14 = 1.7) in the loessial soil than in the sandy soil, whereas the attachment of Mn2+ to the... 

Table 6.8. The kinetics of the initial changes of Mn concentration of three fractions in incubated Israeli soils under saturated regime (C mg kg-1 t sec) (Han and Banin, 1996, with permission from Soil Sci Soc Am)...

The major ion composition of dispersed soil solutions and saturation extracts from selected soils in California, U.S. Concentrations of trace elements in soil solutions of the California soils that received sludge applications. Concentrations of trace elements in soil solutions extracted by saturated paste from two metal salt-spiked Israeli soils incubated at saturated regime. 

Figure 9.7a shows an example of a-Si H TFT transfer characteristics in linear regime with different W/L ratios and an example of a-Si H TFT characteristics in saturation regime with W/L = 170 pm/6 kpm. A threshold voltage (Vth) of 10 = 11 V, a field-effect mobility (p) of 0.2 0.3 cm2/(V s), a subthreshold swing slope of 0.8 dec/V, and a current ON/OFF ratio of larger than 106 for VGS from —10 to 30 V were obtained from these curves for a-Si H TFTs. These devices were used in 4-a-Si H TFTs AM-PLEDs. The electrical properties of a-Si H TFTs used in 3-a-Si H TFTs AM-PLEDs are described in Ref. [18]. 

In another study of SHG in the femtosecond regime, an experiment to determine the optimal focal position within a bulk KNbOj crystal has been carried out. It was shown that, at low powers below the saturation regime, the optimal position of the focal spot is indeed in the center of the crystal as predicted by our present model. 

Fig. 10 (a) Transfer characteristics in the linear and saturation regimes for a-substituted quinquethiophene liquid crystalline monolayers assembled on the Si02 gate dielectric surface of a 40 pm channel length FET. Inset) Field-effect mobility as a function of FET channel length, (b) Output characteristics of the FET. The transfer and output characteristics were scanned in both positive and negative directions in applied voltage... 

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