Resolution depth

Depth resolution Lateral resolution Sample requirements 

Depth resolution Quantification Lateral resolution Destructive 

Depth resolution Minimum step Maximum step Lateral resolution Maximum sample size Instrument cost 

Depth resolution depends on the (spectrally dependent) optical absorption coefficient of the material. Near-surface analysis (first 50 nm) frequendy can be per- 

Lateral resolution Depth profiling Depth resolution Maximum depth Imaging/mapping 

Another confusing issue is that of depth resolution. It is a measurement of the technique s ability to clearly distinguish a property as a function of depth. For example a depth resolution of 20 A, quoted in an elemental composition analysis, means that the composition at one depth can be distinguished from that at another depth if there is at least 20 A between them. 

Quantification Detection limits Depth profiling Penetration depth Depth resolution Lateral resolution 

Table 1 several applications, frequencies and thickness / depth resolution 

Yes, repeated laser shots sample progressively deeper layers depth resolution 50-100 nm 

This approach is more close to X-ray stereo imaging and caimot reach enough depth resolution. There are also several systems with linear movement (1-dimensional) through the conical beam [5] as shown in Fig.4. In this case usable depth and spatial resolution can be achieved for specifically oriented parts of the object only. 

Destructive Chemical bonding Quantification Accuracy Detection limits Depth probed Depth resolution Lateral resolution Imaging/ mapping 

Complete elemental analysis of complex thin-film structures to several pm depth, with excellent depth resolution 

The discussion of Rutherford backscattering spectrometry starts with an overview of the experimental target chamber, proceeds to the particle kinematics that detennine mass identification and depth resolution, and then provides an example of the analysis of a silicide. 

Reflected Electron Energy-Loss Spectroscopy (REELS) has elemental sensitivities on the order of a few tenths of a percent, phase discrimination at the few-percent level, operator controllable depth resolution from several nm to 0.07 nm, and a lateral resolution as low as 100 nm. 

The physical techniques used in IC analysis all employ some type of primary analytical beam to irradiate a substrate and interact with the substrate s physical or chemical properties, producing a secondary effect that is measured and interpreted. The three most commonly used analytical beams are electron, ion, and photon x-ray beams. Each combination of primary irradiation and secondary effect defines a specific analytical technique. The IC substrate properties that are most frequendy analyzed include size, elemental and compositional identification, topology, morphology, lateral and depth resolution of surface features or implantation profiles, and film thickness and conformance. A summary of commonly used analytical techniques for VLSI technology can be found in Table 3. 

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