High-resolution depth profile

Determination of structural parameters of surfaces and interfaces very high resolution depth profiling... 

MEIS has proven to be a powerful and intuitive tool for the study of the composition and geometrical structure of surfaces and interfaces several layers below a surface. The fact that the technique is truly quantitative is all but unique in surface science. The use of very high resolution depth profiling, made possible by the high-resolution energy detectors in MEIS, will find increased applicability in many areas of materials science. With continued technical development, resulting in less costly instrumentation, the technique should become of even wider importance in the years to come. 

In addition to comprehensive elemental coverj e, SNMS also provides for high-resolution depth profile measurements with the same quantitation capability... 

An imponant component of the complex metallizations for both semiconductor devices and magnetic media is the diffusion barrier, which is included to prevent interdiffiision between layers or diffusion from overlyii layers into the substrate. A good example is placement of a TiN barrier under an Al metallization. Figure 7a illustrates the results of an SNMSd high-resolution depth profile measurement of a TiN diffusion barrier inserted between the Al metallization and the Si substrate. The profile clearly exhibits an uneven distribution of Si in the Al metallization and has provided a clear, accurate measurement of the composition of the underlying TiN layer. Both measurements are difficult to accomplish by other means and dem-... 

G. Deconninck, B. Van-Oystaeyen, High resolution depth profiling of F, Ne and Na in materials, Nucl. Instr. Meth. 218 (1983) 165-170. 

With the application of the newly developed continuous-flow isotope-ratio monitoring mass spectrometers, the required seawater sample volume for N2O dual isotope measurements have been drastically reduced and therefore facilitated the determination high resolution depth profiles of the N2O dual isotope signature (Brand, 1996 Yoshinari et al, 1997) Repeated measurements of depth profiles at... 

For all these specialty polymers, deuterium can be used as a label on one or the other monomer. Deuterium labeling allows the use of techniques based on ion detection such as forward recoil spectrometry (FRES), nuclear reaction analysis (NRA) or secondary ion mass spectrometry (SIMS). If a high-resolution depth profile of the interfacial region is needed, neutron reflectivity can also be used. The main drawback of that approach is the cost of the deuterated polymers while deuterated styrene and methyl methacrylate are expensive but commercially available, other monomers need to be synthesized and the cost can be quite prohibitive. 

In secondary ion mass spectroscopy (SIMS) an incident ion beam with energy in the range of 4-15 keV is used to create secondary ions from the sample. This provides high-resolution depth profiles with a detection limit down to Ippb. 

The very favorable features of electron gas SNMS for high-resolution depth profiling being achieved with the DBM technique (see above) become exemplified by Figure 16. This figure shows the depth profile through a W-Si multilayer stack on a ceramic... 

AUGER Auger Electron Spectroscopy Surface analysis and high resolution depth profiling Auger electrons from near surface atoms 0.1-1 at% <20A >i,oooA... 

Loesing R (2001) Development of high resolution depth profiling of ultrashallow dopant implants with SIMS. Dissertation, North Carolina State University, http //repository.lib.ncsu. edu/ir/bitstream/1840.16/5181/1/etd.pdf... 

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