Depth profile resolution

ERDA (HFS) only requires the addition of a thin foil (of carbon, mylar or aluminium) to separate forward scattered hydrogen from forward scattered primary He++ ions. The analytical information obtained consists of hydrogen concentration versus depth. The sample is tilted so that the He++ beam strikes at a grazing angle, giving a HFS depth profile resolution of about 50 nm. The surface hydrogen content... 

Laser Repetition Rate and Cell Wash-Out Time The pulse mixing and signal tailing that are induced during the aerosol transport is a common limitation of LA-ICP-MS in terms of depth profiling resolution. In order to avoid any mixing of information... 

Destructive Chemical bonding Depth profiling Quantification Accuracy Detection limits Sampling depth Lateral resolution Imaging/mapping... 

Information Element range Destructive Lateral resolution Depth profiling Depth probed Detection limits Quantitative Imaging... 

Lateral resolution Depth profiling Depth resolution Maximum depth Imaging/mapping... 

Determination of structural parameters of surfaces and interfaces very high resolution depth profiling... 

Depth profiling Lateral resolution Imaging/ mapping... 

Sputtered Neutral Mass Spectrometry (SNMS) is the mass spectrometric analysis of sputtered atoms ejected from a solid surface by energetic ion bombardment. The sputtered atoms are ionized for mass spectrometric analysis by a mechanism separate from the sputtering atomization. As such, SNMS is complementary to Secondary Ion Mass Spectrometry (SIMS), which is the mass spectrometric analysis of sputtered ions, as distinct from sputtered atoms. The forte of SNMS analysis, compared to SIMS, is the accurate measurement of concentration depth profiles through chemically complex thin-film structures, including interfaces, with excellent depth resolution and to trace concentration levels. Genetically both SALI and GDMS are specific examples of SNMS. In this article we concentrate on post ionization only by electron impact. 

Detection limits Depth probed Depth profiling Lateral resolution... 

In summary, CL can provide contactless and nondestructive analysis of a wide range of electronic properties of a variety of luminescent materials. Spatial resolution of less than 1 pm in the CL-SEM mode and detection limits of impurity concentrations down to 10 at/cm can be attained. CL depth profiling can be performed by varying the range of electron penetration that depends on the electron-beam energy the excitation depth can be varied from about 10 nm to several pm for electron-beam energies ranging between about 1 keV and 40 keV. 

Rutherford Backscattering (RBS) provides quantitative, nondestructive elemental depth profiles with depth resolutions sufficient to satisfy many requirements however, it is generally restricted to the analysis of elements heavier than those in the substrate. The major reason for considering depth profiling using FIXE is to remove this restrictive condition and provide quantitative, nondestructive depth profiles for all elements yielding detectable characteristic X rays (i.e.,Z> 5 for Si(Li) detectors). 

Because a FIXE spectrum represents the int al of all the X rays created along the particle s path, a single FIXE measurement does not provide any depth profile information. All attempts to obtain general depth profiles using FIXE have involved multiple measurements that varied either the beam energy or the angle between the beam and the target, and have compared the results to those calculated for assumed elemental distributions. Frofiles measured in a few special cases surest that the depth resolution by nondestructive FIXE is only about 100 nm and that the absolute concentration values can have errors of 10-50%. 

MEIS has proven to be a powerful and intuitive tool for the study of the composition and geometrical structure of surfaces and interfaces several layers below a surface. The fact that the technique is truly quantitative is all but unique in surface science. The use of very high resolution depth profiling, made possible by the high-resolution energy detectors in MEIS, will find increased applicability in many areas of materials science. With continued technical development, resulting in less costly instrumentation, the technique should become of even wider importance in the years to come. 

By acquiring mass-resolved images as a function of sputtering time, an imaging depth profile is obtained. This combined mode of operation provides simultaneous lateral and depth resolution to provide what is known as three-dimensional analysis. 

In quadrupole-based SIMS instruments, mass separation is achieved by passing the secondary ions down a path surrounded by four rods excited with various AC and DC voltages. Different sets of AC and DC conditions are used to direct the flight path of the selected secondary ions into the detector. The primary advantage of this kind of spectrometer is the high speed at which they can switch from peak to peak and their ability to perform analysis of dielectric thin films and bulk insulators. The ability of the quadrupole to switch rapidly between mass peaks enables acquisition of depth profiles with more data points per depth, which improves depth resolution. Additionally, most quadrupole-based SIMS instruments are equipped with enhanced vacuum systems, reducing the detrimental contribution of residual atmospheric species to the mass spectrum. 

In addition to comprehensive elemental coverj e, SNMS also provides for high-resolution depth profile measurements with the same quantitation capability... 

An imponant component of the complex metallizations for both semiconductor devices and magnetic media is the diffusion barrier, which is included to prevent interdiffiision between layers or diffusion from overlyii layers into the substrate. A good example is placement of a TiN barrier under an Al metallization. Figure 7a illustrates the results of an SNMSd high-resolution depth profile measurement of a TiN diffusion barrier inserted between the Al metallization and the Si substrate. The profile clearly exhibits an uneven distribution of Si in the Al metallization and has provided a clear, accurate measurement of the composition of the underlying TiN layer. Both measurements are difficult to accomplish by other means and dem-... 

Figure 7 Quantitative high depth resolution profile of the major elements in the thin-film structure of Al /TIN /Si, comparing the annealed and unannealad structures to determine the extent of interdiffusion of the layers. The depth profile of the unannealed sample shows excellent depth resolution (a). The small amount of Si in the Al is segregated toward the Al/TiN interface. After annealing, significant Ti has diffused into the Al layer and Al into the TIN layer, but essentially no Al has diffused into the Si (b). The Si has become very strongly localized at the Al / TIN interface.

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