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Sensitivity element

Strain-gauge pressure transducers are manufactured in many forms for measuring gauge, absolute, and differential pressures and vacuum. Full-scale ranges from 25.4 mm of water to 10,134 MPa are available. Strain gauges bonded direc tly to a diaphragm pressure-sensitive element usually have an extremely fast response time and are suitable for high-frequency dynamic-pressure measurements. [Pg.762]

A new generation of mesoporous silica (SG) materials obtained by sol-gel technique where polymers and ionic or non-ionic surfactant act as stmcture - directed templates is widely developed during last year s. Final materials can be synthesized as thin films and used as sensitive elements of optical and electrochemical sensors. [Pg.306]

PSS-SG composite film was tested for sorption of heme proteins hemoglobin (Hb) and myoglobin (Mb). The peroxidaze activity of adsorbed proteins were studied and evaluated by optical and voltammetric methods. Mb-PSS-SG film on PG electrode was shown to be perspective for detection of dissolved oxygen and hydrogen peroxide by voltammetry with linear calibration in the range 2-30 p.M, and detection limit -1.5 p.M. Obtained composite films can be modified by different types of biological active compounds which is important for the development of sensitive elements of biosensors. [Pg.306]

Low temperature sol-gel technology is promising approach for preparation of modified with organic molecules silica (SG) thin films. Such films are perspective as sensitive elements of optical sensors. Incorporation of polyelectrolytes into SG sol gives the possibility to obtain composite films with ion-exchange properties. The addition of non-ionic surfactants as template agents into SG sol results formation of ordered mechanically stable materials with tunable pore size. [Pg.317]

Ever brighter vacuum-ultraviolet sources are being developed that would further boost SPI sensitivity, which already is typically 10 useful yield general, sensitive elemental analysis would then also be available using SPI, making possible a single laser arrangement for both elemental and molecular SALE... [Pg.569]

Inductively Coupled Plasma-Optical (ICP-optical) methods and ICPMS are extremely sensitive elemental survey techniques that also are described in this volume. ICP methods, however, require a solution for analysis, so that the direct... [Pg.606]

A rupture disc is the pressure containing and pressure sensitive element of a rupture disc device. [Pg.980]

TABLE 6.10. Conditions of Failure of Side-on Overpressure-Sensitive Elements (Glasstone, 1957)... [Pg.203]

A valve that closes in case of fire should be inserted in the oil fuel line to the oil-burning equipment and fitted as close to the tank as possible. It may be held open mechanically, pneumatically or electrically. Temperature-sensitive elements should be arranged to close the valve at a fixed maximum temperature, and sited close to the oil-fired plant and well above floor level. The operating temperature of the heat-sensitive elements should not be greater than 68°C (155°F) except where ambient temperatures in the vicinity of the plant may exceed 418°C (120°F), in which case the operating temperatures may be 183°C (200°F). [Pg.256]

FIGURE 8.4 Configurations for several different kinds of optieal fiber sensing systems are shown. The eommon faetor in all these systems is the use of an optical fiber as an integral element in the system, either to earry light to and from diserete sensors (often referred to as optrodes), or as sensitive elements themselves (intrinsie fiber sensors). Courtesy, AT T Bell Laboratories. [Pg.163]

In Chapter 2 we touch on theoretical models of adsorption response of electrophysical characteristics of real semiconductor adsorbents used as sensitive elements of chemical sensors. [Pg.2]

In Chapter 3 we briefly outline the methods of manufacturing of sensitive elements of semiconductor sensors in order to proceed with the studies of several physical and chemical processes in gases, liquids as well as on the surface of solids. Here we show the peculiarity of preparation of these elements depending on objective pursued and operation conditions. We outline the detection methods (kinetic and stationary), their peculiarities and advantages of their application in various physical and chemical systems. [Pg.2]

Chapter 4 deals with several physical and chemical processes featuring various types of active particles to be detected by semiconductor sensors. The most important of them are recombination of atoms and radicals, pyrolysis of simple molecules on hot filaments, photolysis in gaseous phase and in absorbed layer as well as separate stages of several catalytic heterogeneous processes developing on oxides. In this case semiconductor adsorbents play a two-fold role they are acting botii as catalysts and as sensitive elements, i.e. sensors in respect to intermediate active particles appearing on the surface of catalyst in the course of development of catal rtic process. [Pg.3]

Thus, we have considered in detail various theoretical models of effect of adsorption of molecular, atom and radical particles on electric conductivity of semiconductor adsorbents of various crystalline types. Special attention has been paid to sintered and partially reduced oxide adsorbents characterized by the bridge type of intercrystalline contacts with the dominant content of bridges of open type because of wide domain of application of this very type of adsorbents as sensitive elements used in our physical and chemical studies. [Pg.163]

Production of sensitive elements of sensors. Application of sensors to detect active particles... [Pg.170]

The vast capacity of SCS-based methods are related to simplicity of manufacturing and application of sensitive elements as well as with their unique response to adsorption of chemically active particles of different nature and structure. [Pg.171]

Depending on the task to be solved, sensitive elements of sensors are made in the form of 2 to 4 mm plates of different shapes (round, square, rectangular). As a rule, they have a small size (linear dimensions may vary from less than 1 to 10 mm). Such plates are either polished or, in... [Pg.171]

Table 3.3 shows the data obtained while measuring intensities of a Ag beam by isotope and semiconductor sensor method using a ZnO oxide film as a sensitive element. The data reveals that in this case there is also a satisfactory linear dependence between the number of silver... [Pg.190]

Besides the experimental data mentioned above, the kinetic dependencies of oxide adsorption of various metals are also of great interest. These dependencies have been evaluated on the basis of the variation of sensitive element (film of zinc oxide) conductivity using tiie sensor method. The deduced dependencies and their experimental verification proved that for small occupation of the film surface by metal atoms the Boltzman statistics can be used to perform calculations concerning conductivity electrons of semiconductors, disregarding the surface charge effect as well as the effect of aggregation of adsorbed atoms in theoretical description of adsorption and ionization of adsorbed metal atoms. Considering the equilibrium vapour method, the study [32] shows that... [Pg.191]

The analyzer contains three sensitive elements (thin films of zinc oxide) two elements are used in the measurements, whereas the third one is isolated hrom the atmosphere and serves to compensate for time and temperature drifts and to exclude the influence from molecular components of the environment. [Pg.256]

The problem of measuring small concentration of oxygen in a buffer gas can be solved by using the semiconductor sensor with a sensitive element consisting of a zinc oxide film immersed in a polar or, better, a protodonor liquid (see Section 3.4). [Pg.259]

It should be noted that in a vapour phase the liquid layer on the surface of a sensitive element of the sensor (zinc oxide) must be sufficiently thin, so that it would not produce any influence on the diffusion flux of oxygen through this layer. Possible lack of the film continuity (the presence of voids) does not prevent determination of concentration of oxygen in the bulk of the cell by the vapour - gas method. In this case, one deals with a semi-dry method. On the contrary, the presence of a thick liquid layer causes considerable errors in measuring t, because of different distribution of oxygen in a system gas - liquid layer -semiconductor film (this distribution is close to that in the system semiconductor film - liquid), in addition to substantial slowing down of oxygen diffusion in such systems. [Pg.262]

As SFC provides gaseous sample introduction to the plasma and thus near-100 % analyte transport efficiency, coupling SFC with plasma mass spectrometry offers the potential of a highly sensitive, element-selective chromatographic detector for many elements. Helium high-efficiency microwave-induced plasma has been proposed as an element-selective detector for both pSFC and cSFC [467,468] easy hyphenation of pSFC to AED has been reported [213]. [Pg.488]


See other pages where Sensitivity element is mentioned: [Pg.342]    [Pg.348]    [Pg.124]    [Pg.429]    [Pg.456]    [Pg.26]    [Pg.400]    [Pg.467]    [Pg.468]    [Pg.2302]    [Pg.297]    [Pg.256]    [Pg.253]    [Pg.325]    [Pg.161]    [Pg.529]    [Pg.137]    [Pg.172]    [Pg.172]    [Pg.175]    [Pg.224]    [Pg.230]    [Pg.257]    [Pg.261]    [Pg.153]    [Pg.474]    [Pg.675]   


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DSIMS elemental sensitivity

Element-sensitive electron energy loss

Element-sensitive electron energy loss spectroscopy

Elemental analysis sensitivity

Elemental sensitivities

Elemental sensitivities

Elemental sensitivity and limits of detection

Elemental sensitivity definition

Elements, plasma sensitivity

Level-sensitive storage element

Other redox-sensitive elements

Parameter Sensitivity Models of Bond Graph Elements

Plasma sensitivity, of elements

Pressure-sensitive elements

Redox sensitive elements

Redox-sensitive trace elements, oxidation

Sensitivity forming elements

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