Implanted layers depth resolutions

For shallow implanted or diffused layers, the semiconductor is angle-bevelled and the probe moved along the bevelled surface. A shallow angle coupled with short probe steps, allows equivalent shallow depth steps. Examples are given in ( ) with depth resolution of 200X. The accuracy is limited by the correction factors in the algorithm used in the data reduction. 

For this reason, silicon surface barrier (SSB) or passivated implanted planar silicon (PIPS) detectors remain by far the most popular detector option for charged particle measurements. Although the best depth resolution normally attainable with these detectors is of the order of 5 nm, it is srtflicient to quantify the areal density (mg m ) of a polymer bmsh layer adsorbed at a sample surface. Polymer bmshes or polymer molecules have a typical spatial extent of the order of 2-lOrrm. In order to learn more about the bmsh, one really requires the depth resolution to be significantly better than the polymer chain dimensions. In other words, improvements of the depth resolution will need to rival that which is available by NR (-0.3 nm) before they are likely to have any significant impact on polymer science research. 

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