Chemical vapor deposition photo

There is little information regarding the surface chemistry involved in the nucleation of amorphous silicon by photo-induced chemical vapor deposition (photo-CVD). The reason seems to be that effective chemical and physical means of detecting a small amount of silicon are hardly available at present. In our laboratory, the initial process of amorphous silicon (a-Si) formation from silanes or disilanes on Si02 substrate by photo-CVD has been studied by a new technique of chemical... 

While the decomposition of silacyclobutanes as a source of silenes has continued to be studied in the last two decades, the interest has largely focused on mechanisms and kinetic parameters. However, a few reports are listed in Table I of the presumed formation of silenes having previously unpublished substitution patterns, prepared either thermally or photo-chemically from four-membered ring compounds containing silicon. Two cases of particular interest involve the apparent formation of bis-silenes. Very low-pressure pyrolysis of l,4-bis(l-methyl-l-silacyclobutyl)ben-zene94 apparently formed the bis-silene 1, as shown in Eq. (2), which formed a high-molecular-weight polymer under conditions of chemical vapor deposition. 

Research into light-initiated chemical reactions and processes on solid surfaces is a growing new field which promises to yield a number of useful applications molecular photo-devices for super memory, photo-chemical vapor deposition to produce thin-layered electronic semiconducting materials, sensitive optical media, and the control of photochemical reaction paths, etc. In fact, photochemistry on solid surfaces is now a major field in a national research project on "Frontiers of Highly Efficient Photochemical Processes" sponsored by the Ministry of Education, Science and Culture of Japan. 

Figure 3.2. IRRAS spectra of MOS Si-photo-CVD Si02 2 nm thick-AI system (CVD = Chemical vapor deposition) experiment (triangles) and two-oscillator simulation (solid line) p-polarization,

Kubova O, Svorcik V, Heitz J, Moritz S, Romanin C, Mackova A (2007) Characterization and Cytocompatibility of Carbon Layers Prepared by Photo-Induced Chemical Vapor Deposition. Thin solid films 515 6765-6772. 

In the case of a modern laptop or desktop computer, the GPU chip package may have two hundred leads on a square package that is approximately 4 centimeters on a side and less than 0.5 centimeters in thickness. The actual chip inside the package is a very thin sheet of silicon about 1 square centimeter in size, but covered with several million transistor structures that have been built up through photo-etching and chemical vapor deposition methods, as described above. Examination of any service listing of silicon chip IGs produced by any particular manufacturer will quickly reveal that a vast number of different IGs and functionahties are available. 

CCVD combustion chemical vapor deposition MOCVD mettil-organic-assisted CVD PECVD plasma-enhanced CVD FACVD flame-assisted CVD AACVD aerosol-assisted CVD ESAVD electrostatic-atomization CVD LPCVD low-pressure CVD APCVD atmospheric-pressure CVD PACVD photo-assisted CVD TACVD thermtil-activated CVD EVD electrochemical vapor deposition RTCVD rapid thermal CVD UHVCVD ultrahigh-vacuum CVD ALE atomic-layer epitaxy PICVD pulsed-injection CVD... 

W.G. Breiland, M.E. Coltrin, P. Ho (eds) Laser Based Studies of Chemical Vapor Deposition, Proc. Soc. Photo-opt. Instrum. Eng. 385, 146 (1983)... 

Nonlinear current-voltage (I-V) characteristics can be obtained with a silicon nitride (SiNx) layer. Figure 3 shows across sectional view of a system which consists of met-al/off-stoichiometric-SiNx/ITO formed on a glass substrate. The transparent electrode (ITO) film is deposited on the lower glass and photo-etched to form a separate pixel electrode. Afterwards, a SiN layer is deposited by RF-plasma CVD (chemical vapor deposition). I-V characteristics for a conventional TFD are not completely polarity-symmetric due to differences between the upper and lower SiN interface barriers. In order to cancel these differences and to obtain symmetric I-V characteristics, the... 

G.H. Lee, Y. Yamamoto, M. Kourogia, M. Ohtsua, Blue shift in room temperature photoluminescence from photo-chemical vapor deposited ZnO films. Thin Solid Films 386 (2001) 117-120. 

The constituents of the precursors for most of the ceramics exist in the form of heavy molecular gases or volatile liquids such as halides, hydrides, organo-meta11ics, hydrocarbons and ammonia complexes, which can be dissociated into highly reactive fragments by providing photon, electron or thermal excitation. These fragments can easily react with the second component of the desired ceramic and form a solid product. Most of the chemical vapor deposition processes work on this basic principle. They are known as Thermally Assisted CVD, Plasma Assisted CVD and Photo CVD for thermal, electron and photon excitation respectively. 

Chapter 10 deals with composite films synthesized by the physical vapor deposition method. These films consist of dielectric matrix containing metal or semiconductor (M/SC) nanoparticles. The film structure is considered and discussed in relation to the mechanism of their formation. Some models of nucleation and growth of M/SC nanoparticles in dielectric matrix are presented. The properties of films including dark and photo-induced conductivity, conductometric sensor properties, dielectric characteristics, and catalytic activity as well as their dependence on film structure are discussed. There is special focus on the physical and chemical effects caused by the interaction of M/SC nanoparticles with the environment and charge transfer between nanoparticles in the matrix. 

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