UHVCVD ultrahigh vacuum

CCVD combustion chemical vapor deposition MOCVD mettil-organic-assisted CVD PECVD plasma-enhanced CVD FACVD flame-assisted CVD AACVD aerosol-assisted CVD ESAVD electrostatic-atomization CVD LPCVD low-pressure CVD APCVD atmospheric-pressure CVD PACVD photo-assisted CVD TACVD thermtil-activated CVD EVD electrochemical vapor deposition RTCVD rapid thermal CVD UHVCVD ultrahigh-vacuum CVD ALE atomic-layer epitaxy PICVD pulsed-injection CVD... 

CVD reactions are most often produced at ambient pressure in a freely flowing system. The gas flow, mixing, and stratification in the reactor chamber can be important to the deposition process. CVD can also be performed at low pressures (LPCVD) and in ultrahigh vacuum (UHVCVD) where the gas flow is molecular. The gas flow in a CVD reactor is very sensitive to reactor design, fixturing, substrate geometry, and the number of substrates in the reactor, ie, reactor loading. Flow uniformity is a particulady important deposition parameter in VPE and MOCVD. 

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