Photo-induced chemical vapor deposition

There is little information regarding the surface chemistry involved in the nucleation of amorphous silicon by photo-induced chemical vapor deposition (photo-CVD). The reason seems to be that effective chemical and physical means of detecting a small amount of silicon are hardly available at present. In our laboratory, the initial process of amorphous silicon (a-Si) formation from silanes or disilanes on Si02 substrate by photo-CVD has been studied by a new technique of chemical... 

Kubova O, Svorcik V, Heitz J, Moritz S, Romanin C, Mackova A (2007) Characterization and Cytocompatibility of Carbon Layers Prepared by Photo-Induced Chemical Vapor Deposition. Thin solid films 515 6765-6772. 

Chapter 10 deals with composite films synthesized by the physical vapor deposition method. These films consist of dielectric matrix containing metal or semiconductor (M/SC) nanoparticles. The film structure is considered and discussed in relation to the mechanism of their formation. Some models of nucleation and growth of M/SC nanoparticles in dielectric matrix are presented. The properties of films including dark and photo-induced conductivity, conductometric sensor properties, dielectric characteristics, and catalytic activity as well as their dependence on film structure are discussed. There is special focus on the physical and chemical effects caused by the interaction of M/SC nanoparticles with the environment and charge transfer between nanoparticles in the matrix. 

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