APCVD atmospheric pressure

APCVD atmospheric-pressure chemical vapor deposition... 

APCVD Atmospheric-pressure CVD MBE Molecular-beam epitaxy... 

CCVD combustion chemical vapor deposition MOCVD mettil-organic-assisted CVD PECVD plasma-enhanced CVD FACVD flame-assisted CVD AACVD aerosol-assisted CVD ESAVD electrostatic-atomization CVD LPCVD low-pressure CVD APCVD atmospheric-pressure CVD PACVD photo-assisted CVD TACVD thermtil-activated CVD EVD electrochemical vapor deposition RTCVD rapid thermal CVD UHVCVD ultrahigh-vacuum CVD ALE atomic-layer epitaxy PICVD pulsed-injection CVD... 

Typical anion chromatograms of two different BPSG-films (A, B) and a standard (C) are illustrated in Fig. 9-88. Separation was carried out on lonPac AS4A with a carbonate/bicarbonate eluant mixture. Chromatogram A was obtained after dissolving an APCVD-film (APCVD Atmospheric Pressure Chemical Vapor Deposition) that exhibited good flow properties in 0.2% HF solution. Chromatogram B results from a PECVD-film (PECVD Plasma Enhanced Chemical Vapor... 

Dielectric Film Deposition. Dielectric films are found in all VLSI circuits to provide insulation between conducting layers, as diffusion and ion implantation (qv) masks, for diffusion from doped oxides, to cap doped films to prevent outdiffusion, and for passivating devices as a measure of protection against external contamination, moisture, and scratches. Properties that define the nature and function of dielectric films are the dielectric constant, the process temperature, and specific fabrication characteristics such as step coverage, gap-filling capabihties, density stress, contamination, thickness uniformity, deposition rate, and moisture resistance (2). Several processes are used to deposit dielectric films including atmospheric pressure CVD (APCVD), low pressure CVD (LPCVD), or plasma-enhanced CVD (PECVD) (see Plasma technology). 

Atmospheric plant discharge, 21 849-850 Atmospheric pollutants, 10 30 Atmospheric pressure, 24 285-287 Atmospheric pressure chemical vapor deposition (APCVD), 5 807, 811, 812 Atmospheric pressure flow pyrolysis, 21 134... 

The preparation of tin phosphides has received attention due to their interesting mechanical, optical, and electrical properties catalyst applications. Atmospheric pressure chemical vapor deposition (APCVD) of tin phosphide thin films was achieved on glass substrates from the reaction of SnCU or SnBr4 with (R = Cy or Ph) at 500-600 °C. The films showed good uniformity and surface... 

Chemical vapor deposition includes various systems, and they are low-pressure CVD (LPCVD), atmospheric pressure CVD (APCVD), plasma enhanced CVD (PECVD), and others. Each type of CVD system has its own advantages and limitations. For instance, in LPCVD, the reactor is usually operated at 1 torr. Under this condition, the diffusivity of the gaseous species increases significantly compared to that under atmospheric pressure. Consequently, this increase in transport of the gaseous species to the reaction sites and the by-products from the reaction sites in LPCVD will not become the rate-limiting steps. This leads to the surface reaction step to be the rate limiting one. 

Atmospheric pressure CVD was first used for CVD in the microelectronics industry. The reactor for APCVD is, in general, relatively simple. However, as compared to LPCVD, APCVD can be mass-transport rate limited. Most of the APCVD used are for low-temperature oxide deposition and epitaxy. 

A wide variety of deposition methods are available, and several systems of each type are produced commercially. A review of typical systems has been published [10]. In regard to the CVD of insulating films, four general reactors are presently used atmospheric pressure CVD (APCVD), low and medium temperature low pressure CVD (LPCVD), and plasma-enhanced CVD (PECVD). 

There are many examples of CVD those that have been used for the production of metal oxide semiconductor gas sensors include atmospheric pressure CVD (APCVD), where the film synthesis is performed at or slightly above atmospheric pressure, and aerosol-assisted CVD (AACVD), where volatile or non-volatile precursors are made into an aerosol prior to deposition (Binions et al, 2004 Cross and Parkin, 2003). 

Ashraf, S., Blackman, C. S., Naisbitt, S. C. and Parkin, I. P. (2008) The gas-sensing properties ofW03-x thin films deposited via the atmospheric pressure chemical vapour deposition (APCVD) of WC16 with ethanol. Measurement Science and Technology 19,025203. 

There are several forms of CVD and each form has its own acronym. If the process takes place at atmospheric pressure (AP) it is referred to simply as CVD or APCVD. In APCVD systems the gas flow is almost exclusively parallel to the surface. The reactor configurations shown in Figure 28.1 are all examples of configurations used for APCVD. 

For homoepitaxy on the porous Si layers, the usual Si epitaxy methods are applied. Most research has been reported on the usage of atmospheric pressure chemical vapor deposition (APCVD). But... 

Atmospheric Pressure (APCVD) Epitaxy Silicon SiCl4(H2) SiHClj (H2) SiHjClj (Hj) SiH4(H,)... 

Homoepitaxy with Atmospheric or Reduced Pressure Chemical Vapor Deposition (APCVD, RPCVD)... 

---