Photo-etching

Drilling Punching Laser drilling Plasma etching Chemical etching Photo polymer process... 

A note of caution on the use of photo-etched channels has been offered by RAMSHAWfl3 ) who points out that the system is attractive in principle provided that severe practical problems such as fouling are not encountered. With laminar flow in matrices with a mean plate spacing of 0.3-1 mm, volumetric heat transfer coefficients of 7 MW/m3 K have been obtained with modest pressure drops. Such values compare with 0.2 MW/m3 K for shell and tube exchangers and 1.2 MW/m3 K for plate heat exchangers. 

In a subsequent work [182], it was shown that the photoelectrochemical performance of InSe can be considerably improved by means of selective (photo)electrochemical etching. Interestingly, whereas the cleavage vdW plane showed little improvement, the photocurrent in the face parallel to the c-axis was doubled. Note that, in contrast to InSe crystals cleaved in the plane perpendicular to the c-axis that are almost defect free, the crystals cut in the plane parallel to the c-axis contain a high density of defects on their surface which leads to a high rate of electron-hole recombinations and inferior quantum efficiency. The asymmetry in the role of electrons and holes, as manifested, e.g., in the fact that surface holes carry out the selective corrosion of the semiconductor surface in both cleavage orientations, was discussed. 

Zhang, Y. Synchrotron Radiation Direct Photo Etching of Polymers. Vol. 168, pp. 291-340. Zheng, J. and Swager, T. M. Polyfarylene ethynylene)s in Chemosensing and Biosensing. Vol. 177, pp. 151-177. 

Fluorescence Characterization of Ablated Polymeric Materials. In order to produce sharply etched patterns, the film was ablated with a photo-lithographically prepared mesh mask in the contact mode. The ablation was conducted with two laser shots with the laser fluence of 0.2 J/cm2. The decay curves of the ablated film was measured by a... 

There is a correlation between the occurrence of two-layer PS and the saturation photo current value.78 Only a single micro PS layer forms at a photo current density below the photo saturation value while two-layer PS forms at current densities above the saturation current as shown in Figure 17. Also, macro PS layer forms only after a certain amount of charge determined by the amount of etch required for the initiation of macro pores.77... 

There is also an etched layer of Si on the surface under illumination as illustrated in Figure 18. This etched layer is mainly due to photo-induced corrosion. As a result of the photo induced dissolution the top surface of PS layer recedes with time. The rate of dissolution depends on doping, F1F concentration, current density and illumination intensity. 

Illumination generates holes within the material of PS and causes photo corrosion of PS that is much faster than that in the dark. Depending on illumination intensity and time, the pore walls in a PS can be thinned to various extents by the photo induced corrosion. This corrosion process is responsible for the etched crater between the initial surface and the surface of PS as illustrated in Figure 28. It is also responsible for the fractal structure of the micro PS formed under illumination. 

In addition to studies using photo-resist-covered substrates and AFM, atomic level studies were performed to help identify the nature of the surface-limited reactions used to form the electrochemical digital etching cycle [313]. In those studies the dependence of etched amounts on the potential used for Cd oxidation was investigated using a UHV-FC instrument (Fig. 39). 

Indeed, recent results from our laboratory indicate that dendrimer-encapsulated CdS QDs can be prepared by either of two methods [192]. The first approach is analogous to the methodology described earlier for preparing dendrimer-encapsulated metal particles. First, Cd and S salts are added to an aqueous or methanolic PAMAM dendrimer solution. This yields a mixture of intradendrimer (templated) and interdendrimer particles. The smaller, dendrimer-encapsulated nanoparticles may then be separated via size-selective photo etching [193], dendrimer modification and extraction into a nonpolar phase [19], or by washing with solvent in which the dendrimer-encapsulated particles are preferentially soluble. An alternative, higher-yield method relies on sequential addition of very small aliquots of Cd + and S " to alcoholic dendrimer solutions. 

Wilkins and coworkers have redesigned both the sensitizer and the matrix resin (78-79). They have tested a variety of o-nitrobenzyl esters of cholic acid as sensitizers. These substances, like the diazoquinones, are insoluble in aqueous base but undergo a photo-reaction that yields base soluble products. The matrix resin chosen for the new sensitizer materials is a copolymer of methyl methacrylate and methacrylic acid that is far more transparent than novolac resins in the DUV. The new resist materials are reported to have useful sensitivity (ca. 00mJ/cm ) and extremely high contrast. The resist formulation is essentially aliphatic in nature and would be expected to be less stable to dry etching environments than the aromatic-based novolac resin materials (24). 

ABSTRACT A new class of photosensitive, thermally stable polymers containing photo-labile aromatic amide linkages has been prepared. These polymers can be used to provide lithographic relief images for printing, etch masks for microcircuit fabrication and as contrast media for optical information storage. 

Let us now briefly outline the structure of this review. The next section contains information concerning the fundamentals of the electrochemistry of semiconductors. Part III considers the theory of processes based on the effect of photoexcitation of the electron ensemble in a semiconductor, and Parts IV and V deal with the phenomena of photocorrosion and light-sensitive etching caused by those processes. Photoexcitation of reactants in a solution and the related photosensitization of semiconductors are the subjects of Part VI. Finally, Part VII considers in brief some important photoelectrochemical phenomena, such as photoelectron emission, electrogenerated luminescence, and electroreflection. Thus, our main objective is to reveal various photo-electrochemical effects occurring in semiconductors and to establish relationships among them. 

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