Cadmium semiconductor

Another cadmium semiconductor is cadmium sulfide (CdS) and this is being manufactured on a small scale and incorporated into panels that are a metre square and deliver 91 watts, at an efficiency of 11%. The panels are made from commercially available glass 3.2 mm thick with a coating of indium tin oxide on to which is applied a layer of CdS followed by a layer of the CdTe (p-type). 

Mercury Telluride. Compounds of mercury with tellurium have gained importance as semiconductors with appHcations in infrared detection (9) and solar cells (10). The ratio of the components is varied, and other elements such as cadmium, zinc, and indium are added to modify the electronic characteristics. 

Heterogeneous Photocatalysis. Heterogeneous photocatalysis is a technology based on the irradiation of a semiconductor (SC) photocatalyst, for example, titanium dioxide [13463-67-7] Ti02, zinc oxide [1314-13-2] ZnO, or cadmium sulfide [1306-23-6] CdS. Semiconductor materials have electrical conductivity properties between those of metals and insulators, and have narrow energy gaps (band gap) between the filled valence band and the conduction band (see Electronic materials Semiconductors). 

Four different types of junctions can be used to separate the charge carriers in solar cebs (/) a homojunction joins semiconductor materials of the same substance, eg, the homojunction of a p—n sibcon solar ceb separates two oppositely doped layers of sibcon 2) a heterojunction is formed between two dissimbar semiconductor substances, eg, copper sulfide, Cu S, and cadmium sulfide, CdS, in Cu S—CdS solar cebs (J) a Schottky junction is formed when a metal and semiconductor material are joined and (4) in a metal—insulator—semiconductor junction (MIS), a thin insulator layer, generaby less than 0.003-p.m thick, is sandwiched between a metal and semiconductor material. 

Cadmium Telluride. Cadmium teUuride [1306-25-8] CdTe, is another promising thin film. CdTe is a well-known semiconductor often used in high performance infrared sensors. CdTe absorbs visible light very strongly, and very thin films (1—2 llm) are sufficient to absorb most sunlight. 

StiU another method used to produce PV cells is provided by thin-fiLm technologies. Thin films ate made by depositing semiconductor materials on a sohd substrate such as glass or metal sheet. Among the wide variety of thin-fiLm materials under development ate amorphous siUcon, polycrystaUine sUicon, copper indium diselenide, and cadmium teUuride. Additionally, development of multijunction thin-film PV cells is being explored. These cells use multiple layers of thin-film sUicon alloys or other semiconductors tailored to respond to specific portions of the light spectmm. 

Antimony is also used as a dopant in n-ty e semiconductors. It is a common additive in dopants for siHcon crystals with impurities, to alter the electrical conductivity. Interesting semiconductor properties have been reported for cadmium antimonide [12050-27-0] CdSb, and zinc antimonide [12039-35-9] ZnSb. The latter has good thermoelectric properties. Antimony with a purity as low as 99.9+% is an important alloying ingredient in the bismuth teUuride [1304-82-17, Bi Te, class of alloys which are used for thermoelectric cooling. 

The intermetallic compounds with Group 16 (VIA) elements including CdS, CdSe, and CdTe have interesting semiconductor properties for photoconductors, photovoltaic cells, and ir windows. Cadmium sulfide is widely used as a phosphor in television tubes. 

The cadmium chalcogenide semiconductors (qv) have found numerous appHcations ranging from rectifiers to photoconductive detectors in smoke alarms. Many Cd compounds, eg, sulfide, tungstate, selenide, teUuride, and oxide, are used as phosphors in luminescent screens and scintiUation counters. Glass colored with cadmium sulfoselenides is used as a color filter in spectroscopy and has recently attracted attention as a third-order, nonlinear optical switching material (see Nonlinear optical materials). DiaLkylcadmium compounds are polymerization catalysts for production of poly(vinyl chloride) (PVC), poly(vinyl acetate) (PVA), and poly(methyl methacrylate) (PMMA). Mixed with TiCl, they catalyze the polymerization of ethylene and propylene. 

Dimethylcadmium has found use as a volatile source of Cd for metal organic chemical vapor deposition (MOCVD) production of cadmium-containing semiconductor thin films (qv) such as CdS, Cdi 2 Hg -Te, or Cdi 2 Mn -Te, as multiple quantum weU species (32). Semiconductor-grade material seUs for... 

CdS and CdSe are also useful phosphors. CdTe is a semiconductor used as a detector for X-rays and y-rays, ° and mercury cadmium tellurideriri has found widespread (particularly military) use as an ir detector for thermal imaging. 

Tellurium and cadmium Electrodeposition of Te has been reported [33] in basic chloroaluminates the element is formed from the [TeCl ] complex in one four-electron reduction step, furthermore, metallic Te can be reduced to Te species. Electrodeposition of the element on glassy carbon involves three-dimensional nucleation. A systematic study of the electrodeposition in different ionic liquids would be of interest because - as with InSb - a defined codeposition with cadmium could produce the direct semiconductor CdTe. Although this semiconductor can be deposited from aqueous solutions in a layer-by-layer process [34], variation of the temperature over a wide range would be interesting since the grain sizes and the kinetics of the reaction would be influenced. 

Commercially available PV systems most often include modules made from single-crystal or poly-ciystalline silicon or from thin layers of amoiphous (non-crystalline) silicon. The thin-filni modules use considerably less semiconductor material but have lower efficiencies for converting sunlight to direct-current electricity. Cells and modules made from other thin-filni PV materials such as coppcr-indiuni-diselenide and cadmium telluride are under active development and are beginning to enter the market. 

Focusing on the concept of the completely sealed system, the Sanyo Electric Co. developed sealed-type nickel-cadmium batteries in 1961. This type of battery enjoys a wide application range that is still expanding a large variety of nickel-cadmium batteries has been developed to meet user needs ranging from low-current uses like emergency power sources and semiconductor memories to high-power applications such as cordless drills. 

Colvin, V. Schlamp, M. and Alivisatos, A. P. (1994). Light-emitting diodes made from cadmium selenide nanocrystals and a semiconductor polymer. Nature, 370,354-357. 

The formation of semiconductor nanoparticles and related stmctures exhibiting quantum confinement within LB films has been pmsued vigorously. In 1986, the use of the metal ions in LB films as reactants for the synthesis of nanoscale phases of materials was described [167]. Silver particles, 1-2 mn in size, were produced by the treatment of silver be-henate LB films with hydrazine vapor. The reaction of LB films of metal salts (Cd, Ag, Cu, Zn, Ni, and Pb ) of behenic acid with H2S was mentioned. The use of HCl, HBr, or HI was noted as a route to metal halide particles. In 1988, nanoparticles of CdS in the Q-state size range (below 5 mn) were prepared inside LB films of cadmium arachi-... 

Generally, the experimental results on electrodeposition of CdS in acidic solutions of thiosulfate have implied that CdS growth does not involve underpotential deposition of the less noble element (Cd), as would be required by the theoretical treatments of compound semiconductor electrodeposition. Hence, a fundamental difference exists between CdS and the other two cadmium chalcogenides, CdSe and CdTe, for which the UPD model has been fairly successful. Besides, in the present case, colloidal sulfur is generated in the bulk of solution, giving rise to homogeneous precipitation of CdS in the vessel, so that it is quite difficult to obtain a film with an ordered structure. The same is true for the common chemical bath CdS deposition methods. 

Dale PJ, SamantiUeke AP, Shivagan DD, Peter LM (2007) Synthesis of cadmium and zinc semiconductor compounds from an ionic liquid containing chohne chloride and urea. Thin Sohd Films 515 5751-5754... 

Let us add here that the fabrication of polycrystalline semiconductive films with enhanced photoresponse and increased resistance to electrochemical corrosion has been attempted by introducing semiconductor particles of colloidal dimensions to bulk deposited films, following the well-developed practice of producing composite metal and alloy deposits with improved thermal, mechanical, or anti-corrosion properties. Eor instance, it has been reported that colloidal cadmium sulfide [105] or mercuric sulfide [106] inclusions significanfly improve photoactivity and corrosion resistance of electrodeposited cadmium selenide. 

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