Sanyo Electric

Mitsubishi Heavy Industries, Ltd., Tonen Corp., and Sanyo Electric Co. are participating in the program. This effort is in its early stages and is concentrating on cell components and small cell development. 

Fig. 19. Self-discharge at ambient temperatures for a 35 A-h cell, NTS-2 prototype Sanyo Electric Co. cell.

Focusing on the concept of the completely sealed system, the Sanyo Electric Co. developed sealed-type nickel-cadmium batteries in 1961. This type of battery enjoys a wide application range that is still expanding a large variety of nickel-cadmium batteries has been developed to meet user needs ranging from low-current uses like emergency power sources and semiconductor memories to high-power applications such as cordless drills. 

Much of this study was conducted on LaNi5-based alloys [13-20] and TiNir-based alloys [21-23], Sanyo Electric, Matsushita Battery and most other battery manufacturers have been using LaNi5-based rare earth-nickel-type alloys [24,... 

Figure 20 shows the charge-discharge characteristics of the AA-size nickel-metal hydride battery in comparison with the nickel-cadmium battery produced by Sanyo Electric. Its capacity density is 1.5 to 1.8 higher than that of nickel-cadmium batteries. 

Sanyo Electric Co., Ltd. Alkaline Manganese Battery Catalogue, 1995. 

Furukawa, Nobuhiro (1 2) Electrochemistry Department New Materials Research Center Sanyo Electric Co., Ltd. 1-18-13 Hashiridani Hirakata City Osaka 573-8534 Huggins, Robert A. (111 4) Technical Faculty Christian-Albrechts-University Kaiserstr. 2 24143 Kiel Germany... 

Japan 2 and 30 kWe PEFC pilot plants have been promoted in Japan as a part of New Sunshine Program. The 2 kWe plant is for residential use and will be developed by Sanyo Electric. The plant is scheduled for testing in 2000. 

Electrochemical potential memory devices were proposed by Takahashi and Yamamoto (1973) they have been extensively developed by Ikeda and Tada (1980) of the Sanyo Electric Company, Japan, and are commercially available. The device construction is... 

The n-type GaP used was a single crystal in the form of wafers, 99.999%pure and doped with sulfur to the concentration of 2 to 3 x 1017 cm-3 (Yamanaka Chemical Industries Ltd.). The p-type GaP used was doped with zinc to 3.7 x 10 cm 3 (Sanyo Electric Co., Ltd.). Both were cut perpendicular to the [lll]-axis. The ohmic contact was made by vacuum deposition of indium on one face of the crystal, followed by heating at ca. 500 °C for 10 min. The side connected with a wire was covered with epoxy resin. Before the experiment, the crystals were polished and etched with warm aqua regia. The (lll)-face (Ga face) and the (lll)-face (P face) were distinguishable by microscopic inspection of the etched surfaces, the former very rough and the latter smooth. 

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