Sputtering systems

Two processes, referred to as sputtered and pyrolitic, were developed to produce large volumes of quality, low-e coated glass. Pyrolitic coatings are incorporated into float glass production and tend to be more durable. Sputtered systems use a stand-alone vacuum deposition process to produce coatings that are have lower emissivities but that are softer and need more protection than pyrolitic coatings. 

Fig. 10.12 l-V for Ti-Ln-O compared to Ti-O, showing the dramatic improvement in leakage current (for films deposited in same sputtering system). 

Fig. 10.13 l-V for Ta-AI-O-N compared to Ta-O, showing that Al improves the electrical properties (based on depositions in the same sputtering system). The composition of this film was about Ta0.8AI0.2O1.45N0.05 ... 

FTM and atom-probe studies of thin films of Ni, Au, Pt, a-Ge H, a-Si H and WO3, etc., on various substrates were reported by Krishna-swamy et a/.81 First, field ion tips each with a field evaporated surface were prepared. They are placed in an MRC model 8502 r.f. sputtering system. Tips were mounted on a recessed and shielded structure behind the sputtering surface which is bored with small holes about 1 to 2 mm in diameter. The very end of the tips came out of the holes to approximately the same level of the sputtering surface. Films were sputtered at about 20 mTorr Ar at an r.f. power of about 50 W. Thickness of a deposited thin film was controlled by both the r.f. power and the deposition time. Film thickness in the range of a few hundred to a few thousand A were studied. These tips were then imaged with Ne in the field ion microscope, or analyzed in the flight-time-focused ToF atom-probe. 

The reactive ion etching system used for the delineation of tin oxide thin film is a diode RF sputtering system and was described in our earlier paper (8). For tin oxide etching, the etching parameters used are as follows ... 

Process gas. In, for example, flow-reactors, sputtering systems and systems with flowing purge gas, gas is deliberately introduced. In such cases, the pumping system must deal with this gas load, in addition to 1-3 above, to maintain the pressure. 

A crucial parameter for the productivity of an in-line sputtering system is the cycle time, with the deposition rate of the magnetron sputter process being an important parameter. The film thickness d [nm] at a given substrate transport speed vc [rnrnin can be calculated from the dynamic deposition rate ad[nmmmin 1] which is the film thickness when the substrate speed is lmmin-1. The dynamic rate can be derived from the static rate as [nmmin-1] on assuming the width b [m] of the coating zone. 

Typical pilot line sputtering systems are in-line systems with dynamic deposition where the substrate passes one or more targets. The substrates are additionally heated in some but not in all systems. The systems are partly derived from those sold otherwise for ITO-deposition in flat panel display... 

As was explained in several chapters of Volume 21 A, many a-Si H preparation methods are known. In this section, sputtering will be discussed with the aim of clarifying a-Si H properties (Imamura et al 1980), and it will be seen that electrical and optical properties can be controlled over a considerable range by manipulating reaction parameters (Paul et al., 1976). The sputtering system details are described in Volume 21 A, Chapter 4, by Moustakas. 

BN films were deposited on silicon (100) wafer with resistivity (5-8Q cm) by a magnetron sputtering system. Sputtering target used here was a hot-pressed h-BN with 4N purity. The substrate was applied with a negative bias at 180V and 300V, respectively. Deposition was carried out with a base pressure of 2x 1 O Pa and mixed... 

We found that there is an RF power density threshold below which this SME passivation pretreatment does not occur. In our RIE/sputtering system at p 20 mTorr O2, this threshold was about 0.25 W/cm (30 W) (Figure 2). At lower power densities, the resist was again seriously damaged and mostly volatilized. At higher RF power densities but with longer etch... 

Figure 4.34. Schematic of physical vapor deposition apparati. Shown are (a) an evaporation system and (b) a sputtering system.

Figure 10.1 Schematic Diagram of a Typical D-C Sputtering System (Ref.559)...

Copper films for the polishing experiments were sputter deposited using a TORR International CRC-150 sputtering system on 6" blanket silicon wafers with tantalum as the adhesion promotion layer. The resistivity of the sputtered copper films was determined to be 2.5 jX2 cm. The slurries for the polishing experiment were prepared using a-alumina particles, with a bulk density of 3.7 g/cc, obtained from Ferro Corporation. The solids concentration was kept at 2 wt % unless otherwise stated. All the chemicals were purchased from Aldrich chemical company and were used without further purification. 

Another point of concern is that many sputter systems use some... 

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