Magnetron plasma

Kato, T., Ito, T., Ishikawa, H., and Maeda, M., Magnetron-Plasma C VD System and its Applications to Aluminum Film Deposit on, Proc. Int. Conf. on Solid State Devices and Materials, Business Center for Academic Societies, Tokyo, Japan (Aug. 1986)... 

The rate of sputtering of aluminum from the electrode used in a magnetron plasma polymerization system is dependent on the plasma energy density, which can be stipulated by the external parameter Vjp, which is the acceleration potential in the vicinity of the cathode, for Ar discharge, while the deposition of CH4 is dependent on WjFM in joules per kilogram of CH4 for LCVD as described in Chapter 8. 

Figure 31.27 Corrosion widths of (a) SO2 salt spray and (b) Prohesion salt spray-tested A1 panels with chromated plasma coating systems prepared by anode magnetron plasmas and their corresponding chromated controls.

Figure 32.7 Voltage change with discharge time in DC anode magnetron plasmas and no anode assembly operation 1 seem TMS, SOmtorr, 5W, and 2 seem oxygen, lOOmtorr, 40 W.

Figure 32.9 TMS deposition profile in no anode assembly and anode magnetron plasmas 1 seem TMS, SOmtorr, 5 W, Imin.

The charge carrier density in the magnetron plasma was measured by Langmuir probe measurements [61]. As an example, in Fig. 12 the distribution of the charge carrier density is presented which had been measured 10 mm in front of the substrate. Because the charge carrier density at the plasma sheath is directly related to the ion current towards the substrate (see below), the inhomogeneity visible in Fig. 12 will be reproduced in the ion flux towards the substrate, that is, the ion... 

Xu et al. [210] using a reactive magnetron plasma source claim to have deposited polycrystalline PC3N4 films with crystallites as large as 20 pm. 

Ehiasarian, Arutiun P, New R, Munz W-D, Hultman L, Helmersson U, Kouznetsov V. Influence of high power densities on the composition of pulsed magnetron plasmas. Vacuum 2002 65(2) 147-54. 

N. Brenning, I. AxnSs, M.A. Raadu, D. Lundin, U. Helmersson, A bulk plasma model for dc and HIPIMS magnetrons. Plasma Sources Sci. Technol. 17 (2008) 045009. 

In addition to microwave plasma, direct current (dc) plasma [19], hot-filament [20], magnetron sputtering [21], and radiofrequency (rf) [22-24] plasmas were utilized for nanocrystalline diamond deposition. Amaratunga et al. [23, 24], using CH4/Ar rf plasma, reported that single-crystal diffraction patterns obtained from nanocrystalline diamond grains all show 111 twinning. 

An external magnetic field has also been used to confine the plasma [143]. An arrangement where electromagnets are located under the cathode is known as the controlled plasma magnetron method [144]. The diffusion of electrons to the walls is prevented by the magnetic field between cathode and anode. This results in an increase in electron density, and consequently in a faster decomposition of silane and a higher deposition rate. At a deposition rate of 1 nm/s, device quality material is obtained [144]. In addition, a mesh is located near the anode, and the anode can by biased externally, both in order to confine the plasma and in order to control ion bombardment. 

N.W. Schmidt, T.S. Totushek, W.A. Kimes, D.R. Callender, and J.R. Doyle, Effects of substrate temperature and near-substrate plasma density on the properties of d.c. magnetron sputtered aluminum-doped zinc oxide, J. Appl. Phys., 94 5514-5521 (2003). 

This chapter examines the deposition of fluorinated polymers using plasma-assisted physical vapor deposition. Ultrathin coatings, between 20 and 5000 nm have been produced, using RF magnetron sputtering. The method of coating, fabrication, and deposition conditions are described. 

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