Mobilities thin film transistor

Yabuta, H. Sano, M. Abe, K. Aiba, T. Den, T. Kumomi, H. Nomura, K. Kamiya, T. Hosono, H. 2006. High-mobility thin-film transistor with amorphous InGaZn04 channel fabricated by room temperature rf-magnetron sputtering. Appl. Phys. Lett. 89 112123/1-112123/3. 

Ahn, H., Lee, K.J., Childs, W.R., Rogers, J.A., Nuzzo, R.G., and Shim, A. (2006) Micron and submicron patterning of polydimethylsiloxane resists on electronic materials by decal transfer lithography and reactive ion-beam etching Application to the fabrication of high-mobility, thin-film transistors. 

High Mobility Thin-Film Transistors (TFTs) Fabricated from Semiconducting Polymers... 

Nishii,)., Hossain, F.M.,Takagi, S., Aita, T., Saikusa, K., Ohmaki, Y., Ohkubo, 1., Kishimoto, S., Ohtomo, A., Fukumura.T., Matsukura, F., Ohno, Y., Koinuma, H., Ohno, H. and Kawasaki, M. (2003) High mobility thin film transistors with transparent ZnO charmels. Japanese Journal of Applied Physics, Part 2 Letters, 42, L347. 

Klauk H, Halik M, Zschieschang U, Schmid G, Radlik W, Weber W (2002) High-mobility polymer gate dielectric pentacene thin film transistors. J Appl Phys 92(9) 5259-5263... 

Chiang, H. Q. Wager, J. F. Hoffman, R. L. Jeong, J. Keszler, D. A. 2005. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer. Appl. Phys. Lett. 86 013503/1-013503/3. 

Hoffman, R. L. 2004. ZnO-channel thin-film transistors channel mobility. /. Appl. Phys. 95 5813-5819. 

The CBD CdS was also applied in other areas of device fabrication and application. Mereu et al.32 fabricated thin-film field-effect transistors using CBD CdS on Si02/Si (n-type) substrates. Meth et al.33 fabricated thin-film transistors (TFTs) that incorporated patterned CBD cadmium sulfide as the active layer. Mobility in the =1 -cm2/Vs range with on/off ratios of =105 are needed for practical TFTs (e.g., for displays). Mobility values of 0.1 -1 cm2/Vs with on/off ratios exceeding 107 have been reported for these types of TFTs using CBD CdS. 

Wu, Y. Li, Y. Ong, B. S. 2006. Printed silver ohmic contacts for high-mobility organic thin-film transistors. J. Am. Chem. Soc. 128 4202-4203. 

Snow, E. S. Campbell, P. M. Ancona, M. G. Novak, J. P. 2005. High-mobility carbon-nanotube thin-film transistors on a polymeric substrate. Appl. Phys. Lett. 86 033105-033107. 

Fuchigami, H. Tsumara, A. Kezuka, H. 1993. Polythienylenevinylene thin-film transistor with high carrier mobility. Appl. Phys. Lett. 63 1372-1374. 

Wang, I Lin, Y. Qian, W. Jackson, T. 1998. Thin-film transistors with high carrier mobility based on solution-cast poly(3-alkyl thiophene). 1998 Mater. Res. Soc. Fall Meeting Symposium R. pp. 372. 

Wang, J. Gundlach, D. 1999. High mobility polymer thin film transistors based on copolymers of thiophene and 3-hexyl thiophene. 41st Electronic Materials Conference Digest, pp. 16. 

Field-effect transistors (FETs) Heterojunction bipolar transistors (HBTs) High electron mobility transistors (HEMTs) Metal oxide semiconductor FETs (MOSFETs) Single-electron transistors (SETs) Single-heterojunction HBTs (SH-HBTs) Thin-film transistors (TFTs) hydrogenated amorphous silicon in, 22 135... 

Ruiz R, Papadimitratos A, Mayer AC, Maliiaras GG (2005) Thickness dependence of mobility in pentacene thin film transistors. Adv Mater 17 1795-1798... 

D. J. Gundlach, C.-C. Kuo, S. F. Nelson, T. N. Jackson, Organic thin film transistors with field-effect mobility > 2 cm2 V-1 s 1, presented at 57th Device Research Conference Digest, 1999. 

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