RF sputtering

Other interesting thin-film studies using AES have included the growth of platinum on Ti02- and SrO-terminated (100) SrTiOs single-crystal substrates [2.154], of epitaxial niobium films on (110) T1O2 [2.155], the interaction of copper with a (0001) rhenium surface [2.156], and the characterization of radio-frequency (rf) sputtered TiN films on stainless steel [2.157]. 

When LiMn204 electrodes are deposited as thin films on a platinum substrate, either by electron-beam evaporation or radiofrequency (rf) sputtering, structures are sometimes formed that exhibit unusual electrochemical behavior [146, 147]. Such electrodes have been evaluated in solid-... 

Radio-Frequency (RF) sputtering, using frequencies above 50 kHz, can sputter insulators but the process has low deposition rates. 

Figure 16 (Street et al., 1986) shows the typical sample structure, consisting of three layers of a-Si H. Results using this technique have been reported for samples grown by the rf glow discharge of silane and by rf sputtering (Shinar et al., 1989). The first layer is hydrogenated amorphous silicon, deposited under conditions that yield high quality films (i.e., deposition temperature of 230°C, low growth rate) and is typically two microns thick. Next a layer of approximately 1000 A is deposited, whereby...

Figure 4.9. Log(/D)-VGS (VDS = 20V) and (inset) /D Vds characteristics for an RF-sputtered ZnO TFT on a spin-coated A1PO dielectric annealed at 300 °C. VGS is stepped from 0 to 40V in 5-V increments for the ID-VDS curves device W/L = 5 L = 100 pm. [Reproduced with permission. Meyers, S. T. Anderson, J. T. Hong, D. Hung, C. M. Wager, J. F. Keszler, D. A. 2007. Solution processed aluminum oxide phosphate thin-film dielectrics. Chem. Mater. 19 4023-4029. Copyright 2007 American Chemical Society.]...

Figure 4.10. Representative og(IB)-VGS behavior of an RF-sputtered ZTO-channel TFT on (a) 40-nm A1PO and (b) 100-nm Si02 gate dielectrics on unpatterned p++ Si gate electrodes. Channel and A1 S/D contacts were defined with shadow masks. Dielectric films were annealed at 600 °C prior to channel deposition, whereas the completed stack was annealed at 300 °C. 

The photovoltaic devices were then completed with a 50-nm layer of chemically deposited CdS, 50 nm of radio frequency (RF) sputtered intrinsic ZnO, and 350 nm of Al-doped ZnO and bilayer Ni/Al top contacts deposited by e-beam. Finally, a 100-nm layer of MgF2 is deposited by e-beam to minimize... 

The addition of In and Ga and selenization at high temperature were crucial in obtaining the 13.4%-efficient device. Photovoltaic device fabrication was completed by a CBD of about 500 A of CdS, followed by RF sputtering of 500 A of intrinsic ZnO and 3500 A of Al203-doped conducting ZnO. Bilayer Ni/Al top contacts were deposited in an e-beam system. The final step in the fabrication sequence is the deposition of lOOnm of MgF2 as an antirellection coating. 

Ni-YSZ cermets deposited by RF sputtering (230 nm) were found to have micro-structural features consisting of columnar grains 13 to 75 nm long and 9 to 22 nm wide, and showed good adhesion to the YSZ layer on which they were deposited [128], In a three-layer Ni-YSZ-Ni film deposited on NiO by RF sputtering in another study, the YSZ layer exhibited a columnar structure with some pinholes [129], Microstructural and electrochemical features of Pt electrodes patterned by lithography on YSZ have also been studied [130,131]. 

La O GJ, Hertz J, Tuller H, and Shao-Hom Y. Microstructural features of RF-sputtered SOFC anode and electrolyte materials. J. Electroceram. 2004 13 691-695. 

M. Stankova, X. Vilanova, E. Llobet, J. Calderer, C. Bittencourt, J. J. Pireaux, and X. Correig, Influence of the annealing and operating temperatures on the gas-sensing properties of rf sputtered WO3 thin-film sensors. Sensors Actuators 105(2), 271—277 (2005). 

The transmittance spectrum of a titania nanotube-film (transparent) on glass is shown in Fig. 5.33. The optical behavior of the Ti02 nanotube-arrays is quite similar to that reported for mesostructured titanium dioxide [133], The difference in the envelope-magnitude encompassing the interference fringe maxima and minima is relatively small compared to that observed in titania films deposited by rf sputtering, e-beam and sol-gel methods [134],... 

Suzuki, M., Murakami, T. and Inamura, T., Preparation of Superconducting BaPbj xBixOs Thin Films by RF Sputtering. Jpn. J. Appl. Phys. 19(5) L231 (1980). 

RF sputtering Metals, semiconductors, insulators Radiofrequency oscillation breaks down the space charge that would inhibit direct dc deposition of insulators... 

---