Reactor channel etching

Microchip reactors often contain a mixing part, such as a T-shaped or Y-shaped junction. A typical example is shown in Figure 7.2. A substrate solution and a reagent solution are introduced to inlets A and B, respectively, through holes in the cover plate. The inlet tubes are connected to the holes. The two solutions are combined at a Y junction and a reaction takes place in a reactor channel etched on the reactor plate. Then, a product solution comes out from outlet C on the cover plate. 

Reactor type Chip micro reactor with multiple vertical injections in a main channel Micro-channels etch 146 pm 38 pm mask width etch depth... 

Both reactor types R3 and R4 use the segmented flow (Taylor) principle. They are divided into two categories R3 has very small channels (<1 mm) and R4 are monolith reactors (honeycomb), well developed on the laboratory scale with at least one example of industrial application. Category R3 includes single-channel and multi-ple-channel reactors [10], etched in silicon [10] or glass [10,11], with wall-coated or immobilized catalysts in the case of gas-liquid-solid additions [12], and capillary microreactors for gas-liquid-liquid systems [13]. 

One way to fabricate such a reactor is by deep reactive ion etching (DRIE) with a time-multiplexed inductively coupled plasma etcher (most details on fabrication are given in [77]) [7, 77, 78]. Regions of major importance such as the retainers are etched through to avoid differences in stmctural depth which may cause uneven flow. To generate various channel depths in one design, both front-side and back-... 

GL 16] [R 12] [P 15] By a plasma etch process (see description in ]R 12]), a highly porous surface stmcture can be realized which can be catalyst coated [12]. The resulting surface area of 100 m is not far from the porosity provided by the catalyst particles employed otherwise as a fixed bed. In one study, a reactor with such a waU-porous catalyst was compared with another reactor having the catalyst particles as a fixed bed. The number of channels for both reactors was not equal, which has to be considered in the following comparison. 

The TFTs are made on transparent glass substrates, onto which gate electrodes are patterned. Typically, the gate electrode is made of chromium. This substrate is introduced in a PECVD reactor, in which silane and ammonia are used for plasma deposition of SiN as the gate material. After subsequent deposition of the a-Si H active layer and the heavily doped n-type a-Si H for the contacts, the devices are taken out of the reactor. Cr contacts are evaporated on top of the structure. The transistor channel is then defined by etching away the top metal and n-type a-Si H. Special care must be taken in that the etchant used for the n-type a-Si H also etches the intrinsic a-Si H. Finally the top passivation SiN, is deposited in a separate run. This passivation layer is needed to protect the TFT during additional processing steps. 

The steam reformer is a serpentine channel with a channel width of 1000 fim and depth of 230 fim (Figure 15). Four reformers were fabricated per single 100 mm silicon wafer polished on both sides. In the procedure employed to fabricate the reactors, plasma enhanced chemical vapor deposition (PECVD) was used to deposit silicon nitride, an etch stop for a silicon wet etch later in the process, on both sides of the wafer. Next, the desired pattern was transferred to the back of the wafer using photolithography, and the silicon nitride was plasma etched. Potassium hydroxide was then used to etch the exposed silicon to the desired depth. Copper, approximately 33 nm thick, which was used as the reforming catalyst, was then deposited by sputter deposition. The reactor inlet was made by etching a 1 mm hole into the end... 

The theoretical foundation for this kind of analysis was, as mentioned, originally laid by Taylor and Aris with their dispersion theory in circular tubes. Recent contributions in this area have transferred their approach to micro-reaction technology. Gobby et al. [94] studied, in 1999, a reaction in a catalytic wall micro-reactor, applying the eigenvalue method for a vertically averaged one-dimensional solution under isothermal and non-isothermal conditions. Dispersion in etched microchannels has been examined [95], and a comparison of electro-osmotic flow to pressure-driven flow in micro-channels given by Locascio et al. in 2001 [96]. 

Later, Pattekar and Kothare [21] presented a silicon reactor fabricated by deep reactive ion etching (DRIE). It carried seven parallel micro channels of 400 pm depth and 1 000 pm width filled with commercial Cu/ZnO catalyst particles (from Siid-Chemie) trapped by a 20 pm filter, which also was made by DRIE, in the reactor. The reactor was covered by a Pyrex wafer applying anodic bonding. Details of the reactor are shown in Figure 2.3. 

Tonkovich et al. [123] claimed a 90% size reduction due to the introduction of micro channel systems into their device, which made use of the hydrogen off-gas of the fuel cell anode burnt in monoliths at palladium catalyst to deliver the energy for the fuel evaporation. A metallic nickel foam 0.63 cm high was etched and impregnated with palladium to act as a reactor for the anode effluent It was attached to a micro structured device consisting of liquid feed supply channels and outlet channels for the vapor, the latter flowing counter-flow to the anode effluent... 

A combined evaporator and methanol reformer was developed by Park et al. [124] to power a 5 W fuel cell. However, the device was still electrically heated by heating cartridges. Both the evaporator and the reformer channels, which were identical in size, were prepared on metal sheets 200 pm thick by wet chemical etching. The channel dimensions were length 33 mm, width 500 pm and depth 200 pm. Therefore, the channels were completely etched through the sheets and the channel depth could be varied by introducing several of these sheets into the reactor. The flow distribution between the 20 channels of the device was performed by triangular inlet and outlet fields. Both devices had outer dimensions of 70 mm x 40 mm x 30 mm. 

Wet chemical etching, which applies photo-resist for masking and usually iron chloride solution for etching, is a mature and automated technique industrially available for many applications. It is competitive for mass production and allows for a relatively wide range of channel depths from about 100 up to 600 pm and more, which covers the channel size usually applied in micro structured reactors for processing gases. 

The dual-channel reactor is a silicon chip device and was manufactured by photolithography and potassium hydroxide etching [274]. Silicon oxide was thermally grown on silicon and thin films of nickel were evaporated for passivation because direct fluorination was carried out in this device. Pyrex was bonded anodically to the modified microstructured silicon wafer (see Figure 4.34, top). 

In this reactor, the feed solution enters via a central channel between the anode and cathode beds and then flows in the upward and downward vertical directions (where the majority of the solution passes through the porous cathode). When the cathode bed is filled to capacity with deposited metal, the polarity of the electrode beds is reversed and the metal is electrochemically etched into a small liquid volume to create a concentrated solution. The longer the contact time of the metal-laden solution in the porous cathode, the greater the extent of metal removal (where the contact time is inversely proportional to the catholyte flow rate and directly proportional to the cathode bed thickness). To maximize the energy efficiency for metal removal, the entire bed should operate at or near the metal reduction limiting current density, but this is difficult to achieve because of unwanted hydrogen gas evolution. The relevant differential equations are solved to obtain the metal ion concentration, electric potential, and current density distributions in the cathode bed are [125]... 

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