Silicon nitride deposition

While the manifolds were fabricated by a plain molding process, the microchannels substrate fabrication was quite complicated and was achieved by a multistage process. The following main stages were used in the process (1) double side oxidation of a 525 pm (1 0 0) silicon substrate to 1,000 A, (2) single side 1,200 A silicon nitride deposition, (3) silicon nitride channels template opening by reactive... 

Passivation of device by silicon nitride deposition over terminal metallurgy... 

After we evaluate the nature of the silicon nitride deposited by PECVD, we will return briefly to the question of "characterizing11 a production reactor. 

SixNy is usually deposited by PECVD [40]. Due to temperature restrictions imposed by the steel substrate, the maximum deposition temperature is limited. A further limitation can result from layers that have been deposited before the SixNy. When Au is used as a contact material, the deposition temperature is limited to <280°C because Au diffuses at higher temperatures. PECVD processes for silicon nitride deposition at temperatures below 280 °C are well known and commercially available. However, the low deposition temperature leads to a higher hydrogen content, making the films mechanically and chemically less stable [40]. 

Silicon oxynitrides (SiOxNy) are thin films that are basically a mixture of silicon oxide and silicon nitride, produced in a CVD-process by adding nitrous oxide (N20) to the gases used for silicon nitride deposition. By changing the oxide-to-ni-tride ratio, the properties of these films can be modified towards improved thermal and moisture stability and lower stress compared to pure silicon oxide or silicon nitride thin films [32]. At low oxygen concentrations (0/(0+ N) <0.3), oxynitride layers have good diffusion barrier characteristics [33] and oxidation resistance. 

The semiconductor chip used in the lipid bilayer membrane apparatus was n-type silicon with a 1000 A° insulating layer of silicon nitride deposited over 300 A of thermally grown oxide. A grid of 1% arsenic in gold was deposited on the opposite side and alloyed to provide ohmic contact. 

Features of the resulting layers such as the density, the specific resistance, the breakdown voltage, the band gap, the etching rate, and the permittivity can be correlated to their chemical composition, which is dictated by the deposition conditions. For example, silicon nitride deposited at low ratios of ammonia to... 

Films of silicon nitride deposited on a-Si H employed in thin-film transistors and superlattice structures have been studied by FTIR-ATR [295]. Hydrogen... 

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