Phosphides gallium phosphide

The lasers in the 670-nm region, from the aluminum indium gallium phosphide [107102-89-6] system are available at center wavelengths from 635 to 690 nm. These wavelengths He at the red end of the visible spectmm. Such lasers, which may compete for appHcations with the helium—neon laser, are under intensive development and represent less mature technology than the other lasers. 

A mixture of (C H ) , TiCl, and AlCl is useful for polymerizing C —olefins (85). The dimerization of propylene is accompHshed by using catalysts such as Ni(PR2)4 (86). Alkylphosphines such as / fZ-butylphosphine [2501-94-2] have been proposed as a substitute for high purity phosphine in the production of the semiconductor gallium phosphide (87). 

A schematic of epitaxial growth is shown in Fig. 2.11. As an example, it is possible to grow gallium arsenide epitaxially on silicon since the lattice parameters of the two materials are similar. On the other hand, deposition of indium phosphide on silicon is not possible since the lattice mismatch is 8%, which is too high. A solution is to use an intermediate buffer layer of gallium arsenide between the silicon and the indium phosphide. The lattice parameters of common semiconductor materials are shown in Fig. 2.12. 

Most of these compounds were originally prepared by liquid-phase epitaxy. That process is now largely replaced by MOCVD, particularly in the case of gallium arsenide, gallium arsenic phosphide, and gallium aluminum phosphide. 

LED materials include gallium arsenic phosphide, gallium aluminum arsenide, gallium phosphide, gallium indium phosphide, and gallium aluminum phosphide. The preferred deposition process is MOCVD, which permits very exacting control of the epitaxial growth and purity. Typical applications of LED s are watches, clocks, scales, calculators, computers, optical transmission devices, and many others. 

Photodetectors operate by carrier transport across a semiconductor junction. A wide variety of these photodiodes are available, such as Schottky diodes, phototransistors, and avalanche photodetectors. Typical photodetector materials are gallium arsenic phosphide and gallium phosphide, which are produced by MOCVD or MBE. 

Photovoltaic (PV) solar cells, which convert incident solar radiation directly into electrical energy, today represent the most common power source for Earth-orbiting spacecraft, such as the International Space Station, where a photovoltaic engineering testbed (PET) is actually assembled on the express pallet. The solid-state photovoltaics, based on gallium arsenide, indium phosphide, or silicon, prove capable, even if to different extents and with... 

Benniston AC, Haniman A (2008) Artificial photosynthesis. Materials Today 11 26-34 Inoue T, Fujishima A, Konishi S, Honda K (1979) Photoelectrocatalytic reduction of carbon dioxide in aqueous suspensions of semiconductor powders. Nature 277 637-638 Halmann M (1978) Photoelectrochemical reduction of aqueous carbon dioxide on p-type gallium phosphide in liquid junction solar cells. Nature 275 115-116 Heminger JC, Carr R, Somorjai GA (1987) The photoassisted reaction of gaseous water and carbon dioxide adsorbed on the SrH03 (111) crystal face to form methane. Chem Phys Lett 57 100-104... 

Gallium Nitride, GaN or Gallium Phosphide, GaP Ultraviolet and Blue... 

Metal-Phosphorus Bono Lengths, Torsion Angles between the Metal and Phosphorus Coordination Planes, Sums of Angles at Phosphorus, and 3IP NMR Chemical Shifts for Three-Coordinate Aluminum, Gallium, and Indium Phosphides... 

A further interesting feature of the gallium phosphides and arsenides is that the former compounds are colorless whereas the latter range from yellow to orange. Color can arise from ir- ir transitions in main group compounds for example, in the disilylenes and digermenes R2E = ER2 (E = Si, Ge) in which the it- tt transitions occur at lower energy than... 

Soft, silver white metal that melts in the hand (29.8 °C) and remains liquid up to 2204 °C (difference 2174 °C, suitable for special thermometers). Gallium is quite widespread, but always in small amounts in admixtures. Its "career" took off with the advent of semiconductors. Ga arsenide and Ga phosphide, which are preferential to silicon in some applications, have extensive uses in microchips, diodes, lasers, and microwaves. The element is found in every mobile phone and computer. Ga nitride (GaN) is used in UV LEDs (ultraviolet light-emitting diodes). In this manner, a curiosity was transformed into a high-tech speciality. 

M. Halmann. Photoelectrochemical reduction of aqueous carbon dioxide on p-type gallium phosphide in liquid junction solar cells. Nature. 1978, 275(5676) 115-116. 

Chan K., Ito H., Inaba H., Optical remote monitoring of methane gas using low-loss optical fiber link and indium gallium arsenide phosphide light-emitting diode in 1.33-mm region, Appl. Phys. Lett. 1983 43 634. 

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