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Gallium nitrides

B1.29.6 HIGH-PRESSURE FORMS OF FAMILIAR OR USEFUL MATERIALS DIAMOND, FLUID METALLIC HYDROGEN, METALLIC OXYGEN, IONIC CARBON DIOXIDE, GALLIUM NITRIDE... [Pg.1959]

Wallace C H, Rao L, Kim S-H, Heath J R, Nicol M and Kaner R B 1998 Solid-state metathesis reactions under pressure a rapid route to crystalline gallium nitride Appl. Phys. Lett. 72 596... [Pg.1965]

Pankove J I and Moustaka T D 1997 Gallium Nitride (Semiconductors and Semimetals 50) (Boston Academic)... [Pg.2897]

Gallium Nitride, GaN or Gallium Phosphide, GaP Ultraviolet and Blue... [Pg.350]

Zhong, Z. Qian, F. Wang, D. Lieber, C. M. 2003. Synthesis of p-type gallium nitride nanowires for electronic and photonic nanodevices. Nano Lett. 3 343-346. [Pg.376]

Bulk elastic modulus, of binary compound semiconductors, 22 145, 146-147t Bulk enzymes, from genetically engineered microbes, 22 480 Bulk erosion, 9 78 Bulk fluid velocity method, 16 688 Bulk gallium nitride, supercritical ammonia solution growth of, 14 96-97 Bulk gases... [Pg.122]

T. Suski and P. Perlin. High Pressure Studies of Defects and Impurities in Gallium Nitride... [Pg.304]

W. Gotz and N. M. Johnson, Characterization of Dopants and Deep Level Defects in Gallium Nitride... [Pg.306]

J. A. Miragliotta and D. K. Wickenden, Nonlinear Optical Properties of Gallium Nitride... [Pg.306]

Kocha SS, Peterson MW, Arent DJ, Redwing JM, Tischler MA, Turner JA (1995). Electrochemical investigation of the gallium nitride-aqueous electrolyte interface. J Electrochem Soc 142 L238-L240... [Pg.476]

The industrial application of SiC began with the blue light emitting diode (LED), which was very weak due to the indirect bandgap of SiC but was the only commercial blue electroluminescent light source at the time (the late 1980s). The SiC blue LED was soon surpassed in intensity by the gallium nitride (GaN)-based... [Pg.1]

Gallium nitride (GaN) has a hexagonal structure of wurtzite type with a wide direct bandgap of 3.4 eV at 300 K. GaN-based III—V nitrides with wide band gaps are the potential candidates for device applications in the blue and ultraviolet wavelengths... [Pg.405]

Blue lasers allow higher resolution, and hence higher density of optical storage of information, on devices such as DVDs than the infrared GaAs lasers allow. The earliest blue lasers were based on ZnSe but their lifetime proved too short for commercial applications. Lasers based on gallium nitride (GaN), first demonstrated in 1995, have proved to have greater lifetimes. In these lasers, the photons are produced not in a bulk semiconductor but in quantum wells. [Pg.356]

See other pages where Gallium nitrides is mentioned: [Pg.432]    [Pg.510]    [Pg.118]    [Pg.132]    [Pg.51]    [Pg.302]    [Pg.267]    [Pg.288]    [Pg.1008]    [Pg.375]    [Pg.384]    [Pg.447]    [Pg.41]    [Pg.389]    [Pg.389]    [Pg.390]    [Pg.577]    [Pg.396]    [Pg.45]    [Pg.199]    [Pg.303]    [Pg.306]    [Pg.309]    [Pg.222]    [Pg.42]    [Pg.405]    [Pg.199]    [Pg.433]   
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