MOSFET fabrication

The depletion mode 6H-SiC MOSFETs fabricated by the General Electric group [8] exhibited a fairly low leakage current of 5 x 10 " A at 23 °C at -10 V gate bias and drain bias of 8 V with the on-current as high as 1.6 mA. However, the subthreshold was quite low. These devices operated up to 350 °C. 

If 6 x 1016 cm 3 boron atoms are implanted in the gate region of the p-channel MOSFET fabricated on <111> oriented n-type material with Nj) 1015 cm 3, the compensated results yields ... 

The developer is delivered on a spinner, much hke photoresist or in a bath. Developers originally often contained sodium hydroxide (NaOH). However, sodium is considered an extremely tmdesirable contaminant in MOSFET fabrication... 

For driving matrix liquid crystal display panels, the silicon metal-oxide semiconductor field effect transistor (MOSFET) fabricated on a silicon monolithic wafer has been investigated by several groups [134-150]. The MOS transistor circuit fabrication techniques are well developed and have been used to produce various LSI devices. A dynamic scattering mode, a planar type GH mode or a polymer dispersed (PD) mode are used in these displays because the silicon wafer is intrinsically opaque. The circuit configuration of the panel is essentially the same as that of the p-Si TFT switch matrix addressed liquid crystal display panel as shown its equivalent circuit in Fig. 18(a). 

Metal-oxide semiconductor field-effect transistors (MOSFETs) fabricated on silicon-on-insulator (SOI) wafers operate faster and at a lower power than those fabricated on bulk sihcon wafers. Scaling down, which improves their performance, requires thinner SOI wafers. Although ultrathin (less than 50 nm) SOI wafers are already available, they do not yet have sufficient thickness uniformity. Thus, we undertook to form ultrathin and uniform-thickness SOI wafers by NC-PCVM. 

K.Y. Park, M.S. Kim, and S.Y. Choi, Fabrication and characteristics of MOSFET protein chip for detection of ribosomal protein. Biosens. Bioelectron. 20, 2111-2115 (2005). 

Figure 13.9. Schematic illustration of process steps for fabricating ps-Si MOSFET...

In this chapter, we discussed different approaches used for the design and fabrication of power SiC MOSFETs, including a review of the various structures (UMOS, DMOS, and LDMOS) and process challenges associated with each structure. 

Pd MOS STRUCTURES The Pd MOS device (capacitor and field effect transistor) has been extensively studied as a model chemical sensor system and as a practical element for the detection of hydrogen molecules in a gas. There have been two outstanding reviews of the status of the Pd MOS sensor with primary emphasis on the reactions at the surface (7,8). In this section, the use of the device as a model chemical sensor will be emphasized. As will be seen, the results are applicable not only to the Pd based devices, they also shed light on the operation of chemfet type systems as well. Because of its simplicity and the control that can be exercised in its fabrication, the discussion will focus on the study of the Pd-MOSCAP structure exclusively. The insights gained from these studies are immediately applicable to the more useful Pd-MOSFET. 

The sensors of the electronic nose are assembled in an array. The array is normally a small electronic unit that integrates the different sensors into a practical circuit card or another appropriate system that is easy to insert into the electronic nose instrument. If the array is to be used in a flow injection setup the unit also comprises a flow cell compartment with minimal volume. The system depicted in Fig. 2 shows how MOS and MOSFET arrays are integrated in a flow injection system [11]. Larger arrays can be integrated into silicon chips, as described for CP sensors where, for example an ASIC chip with 32 sensors has been fabricated with BiCMOS technology and having an area of 7 x 7 mm [18]. If the array is be inserted in the headspace volume of a bioreactor, the technical solution is a remote array probe that can be placed in a gas sample container [19]. 

Lifetime characterization is infrequently utilized for MOSFETs. However, with denuded surface zone/precipitated bulk wafer fabrication, both generation and recombination lifetimes are extremely useful process descriptors. Their meaning should be better... 

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