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Gate region

Figure 3.28 Scanning eiectron microscope image of the SiC gate turnoff thyristor s anode and gate regions after faiiure. Figure 3.28 Scanning eiectron microscope image of the SiC gate turnoff thyristor s anode and gate regions after faiiure.
Drops of GOD or urease solution were deposited onto the gate regions using an X-Y stage controlled by a computer. Immobilization of the enzymes was achieved by keeping the ISFET in a chamber filled with glutaraldehyde vapor. [Pg.124]

DOPANT DRIVE-IN (1200°C) AND OXIDIZE SOURCE-DRAIN PHOTOLITHOGRAPHY - ETCH GATE REGION GROW GATE OXIDE (1100°C), 02)... [Pg.427]

The short-channel effect is closely related to the lateral spreading of dopants from the source and drain areas to the gate region, which is contributed by two effects ... [Pg.195]


See other pages where Gate region is mentioned: [Pg.465]    [Pg.340]    [Pg.235]    [Pg.235]    [Pg.298]    [Pg.519]    [Pg.519]    [Pg.429]    [Pg.32]    [Pg.83]    [Pg.86]    [Pg.504]    [Pg.504]    [Pg.8]    [Pg.11]    [Pg.87]    [Pg.228]    [Pg.174]    [Pg.767]    [Pg.770]    [Pg.39]    [Pg.40]    [Pg.40]    [Pg.41]    [Pg.41]    [Pg.43]    [Pg.46]    [Pg.48]    [Pg.75]    [Pg.347]    [Pg.357]    [Pg.158]    [Pg.378]    [Pg.668]    [Pg.33]    [Pg.33]    [Pg.118]    [Pg.121]    [Pg.121]    [Pg.123]    [Pg.172]    [Pg.180]    [Pg.180]    [Pg.197]    [Pg.194]    [Pg.195]    [Pg.574]   
See also in sourсe #XX -- [ Pg.7 ]




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